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Renesas Electronics Small Signal Field Effect Transistors (FET) 33

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
N0302P-T1-AT by Renesas Electronics

N0302P-T1-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (ID): 4.4 A;

SINGLE WITH BUILT-IN DIODE

30 V

4.4 A

4.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.3 W

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SJ600-Z-E1-AZ by Renesas Electronics

2SJ600-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

25 A

25 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

45 W

Other Transistors

YES

NOT SPECIFIED

2SJ601(0)-Z-E1-AZ by Renesas Electronics

2SJ601(0)-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Drain Current (Abs) (ID): 36 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

36 A

36 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

65 W

Other Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SK3386(0)-Z-E1-AZ by Renesas Electronics

2SK3386(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

34 A

34 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

40 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3402(0)-Z-E1-AZ by Renesas Electronics

2SK3402(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

36 A

36 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

40 W

FET General Purpose Power

YES

NOT SPECIFIED

UPA1911ATE-T1-A by Renesas Electronics

UPA1911ATE-T1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-609 Code: e6;

SINGLE WITH BUILT-IN DIODE

20 V

2.5 A

2.5 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e6

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2 W

Other Transistors

YES

TIN BISMUTH

GULL WING

DUAL

SWITCHING

SILICON

UPA1917TE-T1-AT by Renesas Electronics

UPA1917TE-T1-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 6 A;

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

2 W

Other Transistors

YES

NOT SPECIFIED

UPA1919TE-T1-AT by Renesas Electronics

UPA1919TE-T1-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 6; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

20 V

6 A

6 A

.084 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

2 W

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

UPA1952TE-T1-A by Renesas Electronics

UPA1952TE-T1-A

Renesas Electronics

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Maximum Drain Current (ID): 2 A; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

P-CHANNEL

1.15 W

Other Transistors

YES

TIN BISMUTH

UPA677TB-T1-A by Renesas Electronics

UPA677TB-T1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .35 A; Terminal Finish: TIN BISMUTH; Maximum Drain Current (ID): .35 A;

.35 A

.35 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA679TB-T1-A by Renesas Electronics

UPA679TB-T1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e6; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;

.35 A

.35 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL AND P-CHANNEL

.2 W

Other Transistors

YES

TIN BISMUTH

2SJ598(0)-Z-E1-AZ by Renesas Electronics

2SJ598(0)-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1 W

23 W

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SJ598-AY by Renesas Electronics

2SJ598-AY

Renesas Electronics

The Renesas Electronics 2SJ598-AY is a P-CHANNEL FET with 60V DS breakdown voltage and 12A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has a max power dissipation of 23W and can withstand temperatures up to 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

P-CHANNEL

1 W

23 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SJ621-T1B-AT by Renesas Electronics

2SJ621-T1B-AT

Renesas Electronics

2SJ621-T1B-AT by Renesas Electronics is a P-CHANNEL FET with 3.5A ID, 0.062 ohm RDS(on), and 12V DS breakdown voltage. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150°C.

SINGLE WITH BUILT-IN DIODE

12 V

3.5 A

3.5 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.25 W

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SJ624-T1B-AT by Renesas Electronics

2SJ624-T1B-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

1.25 W

Other Transistors

YES

NOT SPECIFIED

2SJ648-T1-A by Renesas Electronics

2SJ648-T1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e6;

SINGLE

.4 A

.4 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

P-CHANNEL

.2 W

Other Transistors

YES

TIN BISMUTH

2SK3385(0)-Z-E1-AZ by Renesas Electronics

2SK3385(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

30 A

30 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

36 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3408-T1B-AT by Renesas Electronics

2SK3408-T1B-AT

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 43 V;

SINGLE WITH BUILT-IN DIODE

43 V

1 A

1 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.2 W

1.25 W

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SK3483(0)-Z-E1-AZ by Renesas Electronics

2SK3483(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 28 A;

SINGLE

28 A

28 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

40 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3484(0)-Z-E1-AZ by Renesas Electronics

2SK3484(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 16 A;

SINGLE

16 A

16 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3377(0)-Z-E1-AZ by Renesas Electronics

2SK3377(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 20 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3377(0)-Z-E2-AZ by Renesas Electronics

2SK3377(0)-Z-E2-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3377-Z-E1-AZ by Renesas Electronics

2SK3377-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 20 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SK3377-Z-E2-AZ by Renesas Electronics

2SK3377-Z-E2-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; JEDEC-95 Code: TO-252; No. of Elements: 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SK3576-T1B-AT by Renesas Electronics

2SK3576-T1B-AT

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

1.25 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3813-AZ by Renesas Electronics

2SK3813-AZ

Renesas Electronics

The Renesas Electronics 2SK3813-AZ is a N-CHANNEL FET with max ID of 60A and Pd of 84W. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial use where peak reflow temp reaches 260°C.

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

260

N-CHANNEL

84 W

FET General Purpose Power

NO

10

2SK3813-Z-E1-AZ by Renesas Electronics

2SK3813-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

84 W

FET General Purpose Power

YES

NOT SPECIFIED

UPA1804GR-9JG-E1-A by Renesas Electronics

UPA1804GR-9JG-E1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; No. of Elements: 1;

SINGLE

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1814GR-9JG-E1-A by Renesas Electronics

UPA1814GR-9JG-E1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

30 V

7 A

7 A

.027 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e6

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2 W

Other Transistors

YES

TIN BISMUTH

GULL WING

DUAL

SWITCHING

SILICON

UPA1815GR-9JG-E1-A by Renesas Electronics

UPA1815GR-9JG-E1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; No. of Elements: 1;

SINGLE

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

P-CHANNEL

2 W

Other Transistors

YES

TIN BISMUTH

2SJ325-AY by Renesas Electronics

2SJ325-AY

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

NO

NOT SPECIFIED

2SJ325-Z-AY by Renesas Electronics

2SJ325-Z-AY

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

YES

NOT SPECIFIED

2SJ325-Z-E1-AZ by Renesas Electronics

2SJ325-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 4 A;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

YES

NOT SPECIFIED