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6.25 W Small Signal Field Effect Transistors (FET) 10

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N6660JTX02 by Vishay Intertechnology

2N6660JTX02

Vishay Intertechnology

Vishay Intertechnology's 2N6660JTX02 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.99A max drain current. Ideal for amplifier applications, it features a built-in diode, 3 ohm max on resistance, and operates in enhancement mode at up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.99 A

.99 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-205AD

O-MBCY-W3

1

3

ENHANCEMENT MODE

150 Cel

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

N-CHANNEL

6.25 W

FET General Purpose Powers

NO

WIRE

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

PMDPB95XNE,115 by NXP Semiconductors

PMDPB95XNE,115

NXP Semiconductors

PMDPB95XNE,115 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max drain current of 3.1A and max power dissipation of 6.25W.

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

3.1 A

2.4 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

6.25 W

IEC-60134

FET General Purpose Power

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

PHK28NQ03LT,518 by NXP Semiconductors

PHK28NQ03LT,518

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Terminal Position: DUAL; Qualification: Not Qualified;

SINGLE WITH BUILT-IN DIODE

30 V

23.7 A

23.7 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012

R-PDSO-G8

e4

2

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Power

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

30

SWITCHING

SILICON

PHK4NQ20T,518 by NXP Semiconductors

PHK4NQ20T,518

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

200 V

4 A

4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Powers

YES

GULL WING

DUAL

SWITCHING

SILICON

2N6661JTXL02 by Vishay Intertechnology

2N6661JTXL02

Vishay Intertechnology

Vishay Intertechnology's 2N6661JTXL02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A ID, and 4Ω RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package style is CYLINDRICAL with METAL-OXIDE SEMICONDUCTOR technology, suitable for high power dissipation up to 6.25W at 150°C.

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

90 V

.86 A

.86 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-205AD

O-MBCY-W3

1

3

ENHANCEMENT MODE

150 Cel

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Powers

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

2N6661JTXV02 by Vishay Intertechnology

2N6661JTXV02

Vishay Intertechnology

Vishay Intertechnology's 2N6661JTXV02 is a N-CHANNEL FET with 90V DS breakdown voltage and 0.86A max drain current. Ideal for switching applications, it features a built-in diode, 6.25W power dissipation, and operates in enhancement mode at up to 150°C.

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

90 V

.86 A

.86 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-205AD

O-MBCY-W3

1

3

ENHANCEMENT MODE

150 Cel

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Powers

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

2N6661JTX02 by Vishay Intertechnology

2N6661JTX02

Vishay Intertechnology

Vishay Intertechnology's 2N6661JTX02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE in a ROUND package with METAL body.

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

90 V

.86 A

.86 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-205AD

O-MBCY-W3

1

3

ENHANCEMENT MODE

150 Cel

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Powers

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

2N6660-E3 by Vishay Intertechnology

2N6660-E3

Vishay Intertechnology

2N6660-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.99A Drain Current, and 6.25W Power Dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and built-in DIODE configuration.

LOW THRESHOLD

SINGLE WITH BUILT-IN DIODE

60 V

.99 A

.99 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-205AD

O-MBCY-W3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

METAL

ROUND

CYLINDRICAL

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Powers

NO

MATTE TIN

WIRE

BOTTOM

AMPLIFIER

SILICON

2N6661-E3 by Vishay Intertechnology

2N6661-E3

Vishay Intertechnology

Vishay Intertechnology's 2N6661-E3 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A Drain Current, and 6.25W Power Dissipation. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operating temperature range from -55°C to 150°C makes it versatile for various electronic designs.

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

90 V

.86 A

.86 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-205AD

O-MBCY-W3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

METAL

ROUND

CYLINDRICAL

N-CHANNEL

6.25 W

Not Qualified

FET General Purpose Powers

NO

SILVER

WIRE

BOTTOM

SWITCHING

SILICON

PMV65UNEAR by Nexperia

PMV65UNEAR

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; JESD-609 Code: e3;

SINGLE WITH BUILT-IN DIODE

20 V

2.8 A

.073 ohm

METAL-OXIDE SEMICONDUCTOR

43 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

6.25 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON