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2.5 W Small Signal Field Effect Transistors (FET) 23

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SI2392ADS-T1-GE3 by Vishay Intertechnology

SI2392ADS-T1-GE3

Vishay Intertechnology

SI2392ADS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 3.1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.126 ohm max on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.

SINGLE WITH BUILT-IN DIODE

100 V

3.1 A

.126 ohm

METAL-OXIDE SEMICONDUCTOR

14 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

STN3PF06 by STMicroelectronics

STN3PF06

STMicroelectronics

STN3PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 2.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150 °C.

AVALANCHE ENERGY RATED

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2.5 A

2.5 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7478QTRPBF by International Rectifier

IRF7478QTRPBF

International Rectifier

IRF7478QTRPBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max ID of 7A and 0.026 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. Suitable for surface mount with GULL WING terminals, this transistor offers high performance in a SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

60 V

7 A

7 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

MS-012AA

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

SI9410DY,518 by NXP Semiconductors

SI9410DY,518

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

30 V

7 A

.007 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

NTMS4176PR2G by Onsemi

NTMS4176PR2G

Onsemi

NTMS4176PR2G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 7.3A max drain current, and 0.018 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.

SINGLE WITH BUILT-IN DIODE

30 V

7.3 A

5.5 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

FDS2672_F085 by Fairchild Semiconductor

FDS2672_F085

Fairchild Semiconductor

FDS2672_F085 by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 3.9A Drain Current, and 0.07 ohm On Resistance. With an operating temperature of up to 150°C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.

SINGLE WITH BUILT-IN DIODE

200 V

3.9 A

3.9 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

FDS6673BZ_F085 by Fairchild Semiconductor

FDS6673BZ_F085

Fairchild Semiconductor

FDS6673BZ_F085 by Fairchild Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 14.5A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0078 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

14.5 A

14.5 A

.0078 ohm

METAL-OXIDE SEMICONDUCTOR

900 pF

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

STN1NF10 by STMicroelectronics

STN1NF10

STMicroelectronics

STN1NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With max Drain Current of 1A and Power Dissipation of 2.5W, it offers reliable performance in small outline packages at temperatures ranging from -55 to 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDS4770 by Fairchild Semiconductor

FDS4770

Fairchild Semiconductor

FDS4770 by Fairchild Semiconductor is a N-CHANNEL FET with a min DS Breakdown Voltage of 40V. It is used for SWITCHING applications and has a max Drain Current (ID) of 13.2A.

SINGLE WITH BUILT-IN DIODE

40 V

13.2 A

13.2 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

NTMS4503NR2 by Onsemi

NTMS4503NR2

Onsemi

NTMS4503NR2 by Onsemi is a N-CHANNEL FET with 28V DS breakdown voltage and 9A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 2.5W. Suitable for surface mount with GULL WING terminals, this MOSFET has an operating temperature of up to 150 °C.

SINGLE WITH BUILT-IN DIODE

28 V

9 A

9 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS10PF30L by STMicroelectronics

STS10PF30L

STMicroelectronics

STS10PF30L by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 10 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

SINGLE WITH BUILT-IN DIODE

30 V

10 A

.01 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

BSO064N03S by Infineon Technologies

BSO064N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: MS-012AA;

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

30 V

12 A

12 A

.0064 ohm

METAL-OXIDE SEMICONDUCTOR

180 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO072N03S by Infineon Technologies

BSO072N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 12 A;

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

30 V

12 A

12 A

.0068 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO094N03S by Infineon Technologies

BSO094N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): 260;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

30 V

13 A

10 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO052N03S by Infineon Technologies

BSO052N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

30 V

14 A

14 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

280 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

NTMS4404NR2 by Onsemi

NTMS4404NR2

Onsemi

NTMS4404NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 9.6A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.0115 ohm. This small outline transistor can handle up to 2.5W power dissipation at 150 °C max temperature.

SINGLE WITH BUILT-IN DIODE

30 V

9.6 A

7 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

300 pF

R-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Powers

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

IRF3000PBF by International Rectifier

IRF3000PBF

International Rectifier

IRF3000PBF by International Rectifier is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.6A Drain Current, 0.4 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is designed for ENHANCEMENT MODE operation.

SINGLE WITH BUILT-IN DIODE

300 V

1.6 A

.0016 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7807VD2PBF by International Rectifier

IRF7807VD2PBF

International Rectifier

IRF7807VD2PBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.025 ohm On Resistance and can handle up to 2.5W power dissipation at 150°C max temperature.

SINGLE WITH BUILT-IN DIODE

30 V

8.3 A

8.3 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTMS4503NR2G by Onsemi

NTMS4503NR2G

Onsemi

NTMS4503NR2G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 9A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150 °C, it features a built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology.

SINGLE WITH BUILT-IN DIODE

28 V

9 A

9 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

NTMS4107NR2G by Onsemi

NTMS4107NR2G

Onsemi

NTMS4107NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 15A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0045 ohm.

SINGLE WITH BUILT-IN DIODE

30 V

15 A

11 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

FDS8449-F085 by Onsemi

FDS8449-F085

Onsemi

FDS8449-F085 by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage and 7.6A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

40 V

7.6 A

7.6 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD SILVER

GULL WING

DUAL

30

SWITCHING

SILICON

FDS9431A-F085 by Onsemi

FDS9431A-F085

Onsemi

FDS9431A-F085 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A Drain Current, and 0.13 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This RECTANGULAR package features GULL WING terminals and is suitable for surface mount installations.

SINGLE WITH BUILT-IN DIODE

20 V

3.5 A

3.5 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD SILVER

GULL WING

DUAL

30

SWITCHING

SILICON

FDS4435BZ-F085 by Onsemi

FDS4435BZ-F085

Onsemi

FDS4435BZ-F085 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current, ideal for SWITCHING applications. It features a RECTANGULAR package shape, GULL WING terminals, and operates in ENHANCEMENT MODE at up to 150°C. With 0.02 ohm On Resistance and 345pF Feedback Capacitance, it offers efficient performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

30 V

8.8 A

8.8 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

345 pF

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD SILVER

GULL WING

DUAL

30

SWITCHING

SILICON