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1.25 W Small Signal Field Effect Transistors (FET) 12

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SJ621-T1B-AT by Renesas Electronics

2SJ621-T1B-AT

Renesas Electronics

2SJ621-T1B-AT by Renesas Electronics is a P-CHANNEL FET with 3.5A ID, 0.062 ohm RDS(on), and 12V DS breakdown voltage. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150°C.

SINGLE WITH BUILT-IN DIODE

12 V

3.5 A

3.5 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.25 W

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SJ624-T1B-AT by Renesas Electronics

2SJ624-T1B-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

1.25 W

Other Transistors

YES

NOT SPECIFIED

2SK3408-T1B-AT by Renesas Electronics

2SK3408-T1B-AT

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 43 V;

SINGLE WITH BUILT-IN DIODE

43 V

1 A

1 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.2 W

1.25 W

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SK3576-T1B-AT by Renesas Electronics

2SK3576-T1B-AT

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

1.25 W

FET General Purpose Power

YES

NOT SPECIFIED

NTR3161NT1G by Onsemi

NTR3161NT1G

Onsemi

NTR3161NT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

4 A

3.3 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.25 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTR3162PT1G by Onsemi

NTR3162PT1G

Onsemi

NTR3162PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.2A Drain Current, 0.07 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.25W and operating temperature up to 150 °C, it is suitable for various electronic designs requiring high performance in a small outline package.

SINGLE WITH BUILT-IN DIODE

20 V

2.2 A

2.2 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTR3162PT3G by Onsemi

NTR3162PT3G

Onsemi

NTR3162PT3G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.2A and 0.07 ohm on-resistance, operating in enhancement mode at up to 150 °C. This small outline transistor with gull wing terminals is designed for high power dissipation of 1.25W in surface mount configurations.

SINGLE WITH BUILT-IN DIODE

20 V

2.2 A

2.2 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTR4170NT3G by Onsemi

NTR4170NT3G

Onsemi

NTR4170NT3G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A max drain current, and 0.055 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at up to 150 °C, making it suitable for various electronic devices.

SINGLE WITH BUILT-IN DIODE

30 V

3.2 A

3.2 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.25 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTR4171PT3G by Onsemi

NTR4171PT3G

Onsemi

NTR4171PT3G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.2A Drain Current, 0.075 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and can handle up to 150 °C temperature.

SINGLE WITH BUILT-IN DIODE

30 V

2.2 A

2.2 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

RTQ035P02TR by ROHM

RTQ035P02TR

ROHM

ROHM's RTQ035P02TR is a P-CHANNEL FET with 20V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.07 ohm RDS(on), and operates in enhancement mode at up to 150°C.

SINGLE WITH BUILT-IN DIODE

20 V

3.5 A

3.5 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

TT8M2TR by ROHM

TT8M2TR

ROHM

ROHM's TT8M2TR is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A and on-resistance of 0.09 ohm. Operating at up to 150°C, this MOSFET comes in a small outline package with 8 terminals.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.5 A

2.5 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

10

SWITCHING

SILICON

SI2302A-TP-HF by Micro Commercial Components

SI2302A-TP-HF

Micro Commercial Components

SI2302A-TP-HF by Micro Commercial Components is a N-channel FET with 20V breakdown voltage and 3A drain current. Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 1.25W. With a drain-source resistance of 0.072 ohm, this transistor is suitable for high-performance electronic circuits.

SINGLE WITH BUILT-IN DIODE

20 V

3 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.25 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON