Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSS138W-E6327
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
SINGLE WITH BUILT-IN DIODE
60 V
.28 A
3.5 ohm
METAL-OXIDE SEMICONDUCTOR
4.2 pF
R-PDSO-G3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.5 W
FET General Purpose Power
YES
GULL WING
DUAL
SWITCHING
SILICON
BSS138W-E6433
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 4.2 pF; Package Body Material: PLASTIC/EPOXY;
LSK489TO-716LROHS
Linear Integrated Systems
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 3 pF;
SEPARATE, 2 ELEMENTS
JUNCTION
3 pF
TO-71
O-XBCY-W6
2
6
DEPLETION MODE
UNSPECIFIED
ROUND
CYLINDRICAL
FET General Purpose Small Signal
NO
WIRE
BOTTOM
AMPLIFIER
LSK489SOT-236LROHS
LSK489SOT-236LROHS by Linear Integrated Systems is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Featuring DEPLETION MODE operation, it has 6 terminals in GULL WING shape. With max power dissipation of 0.5W and operating temperature range from -55 to 150 °C, this JUNCTION FET offers high performance in a SMALL OUTLINE package.
R-PDSO-G6
BSD314SPEH6327XTSA1
Infineon's BSD314SPEH6327XTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features SINGLE configuration with BUILT-IN DIODE, suitable for ENHANCEMENT MODE applications. With 0.5W power dissipation and -55 to 150 °C operating range, it meets AEC-Q101 standards for automotive use.
30 V
1.5 A
.14 ohm
11 pF
e3
P-CHANNEL
AEC-Q101
TIN
NTGS3443T1
Onsemi
NTGS3443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 2.2A Drain Current, and 0.065 ohm On Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150 °C.
20 V
2.2 A
.065 ohm
e0
235
Not Qualified
Other Transistors
Tin/Lead (Sn80Pb20)
30
NTGS3441T1
NTGS3441T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 1.65A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating in ENHANCEMENT MODE, it has 0.09 ohm On Resistance and can handle up to 0.5W Power Dissipation at 150 °C.
1.65 A
.09 ohm
TIN LEAD
DMN2112SN-7
Diodes Incorporated
DMN2112SN-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1.2A max drain current, ideal for switching applications. It operates in enhancement mode, with 0.5W max power dissipation and -55 to 150°C operating temperature range. The package style is small outline, making it suitable for surface mount designs.
1.2 A
.1 ohm
45 pF
MIL-STD-202
FET General Purpose Powers
MATTE TIN
DMN2114SN-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
.16 ohm
2N7002DWL6327
2N7002DWL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A max drain current, and 3ohm on resistance. Ideal for switching applications, it features a small outline package, matte tin finish, and operates in enhancement mode at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.3 A
3 ohm
BSD840NL6327
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.88 A
.4 ohm
175 Cel
BSS816NWL6327
BSS816NWL6327 by Infineon Technologies is a N-CHANNEL FET with 20V DS Breakdown Voltage and 1.4A Drain Current. Ideal for small outline applications, it operates in enhancement mode with 0.16 ohm On Resistance, making it suitable for various electronic devices requiring high performance in compact designs.
1.4 A
10 pF
BSD235CL6327
Infineon's BSD235CL6327 is a Small Signal FET with N-Channel and P-Channel types. It features 2 elements with built-in diode, 0.95A max drain current, and 0.35 ohm max on-resistance. Ideal for applications requiring low power dissipation in small outline packages at up to 150°C operating temperature.
.95 A
.35 ohm
N-CHANNEL AND P-CHANNEL
BSD235NL6327
Infineon's BSD235NL6327 is a N-CHANNEL FET with 2 elements, built-in diode, and 0.95A max drain current. Ideal for small outline applications requiring 0.35 ohm on-resistance and 20V breakdown voltage. Operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS214NWL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
NTGS3455T1
The Onsemi NTGS3455T1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and can withstand temperatures up to 150 °C.
1.75 A
2.5 A
240
NTTD1P02R2
NTTD1P02R2 by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1.45A max drain current, and 0.16 ohm max on resistance. Ideal for switching applications, it features a small outline package with GULL WING terminals and operates in enhancement mode up to 150 °C.
LOGIC LEVEL COMPATIBLE
1.45 A
R-PDSO-G8
8
DMN100-7-F
DMN100-7-F by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 1.1A max drain current, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.5W and peak reflow temp of 260°C, it's suitable for small outline packages in high-temp environments.
HIGH RELIABILITY
1.1 A
.24 ohm
BSS127E6327
Infineon's BSS127E6327 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 600 ohm max on resistance. Ideal for small signal applications, it features a built-in diode and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C operating temperature.
600 V
.021 A
600 ohm
1.5 pF
BSS126E6327
BSS126E6327 by Infineon Technologies is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 500 ohm max on resistance. It is used in small signal applications requiring depletion mode operation, such as power management circuits due to its 0.5W power dissipation and compact gull wing package design.
500 ohm
BSS126E6906
BSS126E6906 by Infineon Technologies is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 500 ohm max on resistance. Ideal for applications requiring small outline packages, such as power supplies and motor control systems.
BSS138WL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .28 A;
BSS138WL6433
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (Abs) (ID): .28 A;
SN7002WL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 4.5 pF; Peak Reflow Temperature (C): 260;
.23 A
5 ohm
4.5 pF
SN7002WL6433
Infineon's SN7002WL6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 5 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.5W.
BSL306NH6327XTSA1
Infineon BSL306NH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, 0.057 ohm RDS(on), and 2.3A ID. Ideal for automotive applications due to AEC-Q101 standard compliance, it features separate elements with built-in diode in a small outline package. Operating from -55°C to 150°C, it offers high power dissipation and low feedback capacitance for efficient performance.
2.3 A
.057 ohm
17 pF
BSS119NH6433XTMA1
Infineon's BSS119NH6433XTMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and -55 to 150 °C operating range.
100 V
.17 A
6 ohm
3.1 pF
NOT SPECIFIED
BSS123K-13
BSS123K-13 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.5W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
ALD810025SCL
Advanced Linear Devices
ALD810025SCL by Advanced Linear Devices is a N-CHANNEL FET with 4 elements and built-in diode. Operating in depletion mode, it has a max drain current of 0.08A and min DS breakdown voltage of 10.6V. Ideal for small outline applications requiring low power dissipation at temperatures ranging from 0 to 70°C.
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
10.6 V
.08 A
R-PDSO-G16
4
16
70 Cel
0 Cel
BSS123IXTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
.19 A
1.6 pF
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