Loading...

.225 W Small Signal Field Effect Transistors (FET) 11

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SMMBF4391LT1G by Onsemi

SMMBF4391LT1G

Onsemi

SMMBF4391LT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.5pF Crss, and -55 to 150 °C operating temperature range. This SMALL OUTLINE transistor with GULL WING terminals is ideal for DEPLETION MODE operation in various electronic circuits.

SINGLE

30 V

30 ohm

JUNCTION

3.5 pF

TO-236

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

AEC-Q101

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

RK7002T116 by ROHM

RK7002T116

ROHM

ROHM RK7002T116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. The transistor has a max power dissipation of 0.225W and can withstand temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.225 W

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

BF862,215 by NXP Semiconductors

BF862,215

NXP Semiconductors

BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

SINGLE

20 V

.04 A

JUNCTION

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BSR57,215 by NXP Semiconductors

BSR57,215

NXP Semiconductors

NXP Semiconductors' BSR57,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 40ohm RDS(on), it operates in DEPLETION MODE at 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is ideal for high-temp environments requiring low power dissipation.

SINGLE

40 V

.01 A

40 ohm

JUNCTION

5 pF

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BSR58,215 by NXP Semiconductors

BSR58,215

NXP Semiconductors

NXP Semiconductors' BSR58,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 60 ohm On Resistance, it operates in DEPLETION MODE at up to 150°C. This SMALL OUTLINE transistor with GULL WING terminals is ideal for compact electronic devices requiring low power dissipation.

SINGLE

40 V

.005 A

60 ohm

JUNCTION

5 pF

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BSS138-7 by Diodes Incorporated

BSS138-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 3.5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE WITH BUILT-IN DIODE

50 V

.2 A

.2 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.225 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTR0202PLT1 by Onsemi

NTR0202PLT1

Onsemi

NTR0202PLT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode for efficient performance.

SINGLE WITH BUILT-IN DIODE

20 V

.4 A

.4 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MMBF170LT3G by Onsemi

MMBF170LT3G

Onsemi

MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.

SINGLE WITH BUILT-IN DIODE

60 V

.5 A

.5 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

FET General Purpose Powers

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

BSS123LT3G by Onsemi

BSS123LT3G

Onsemi

BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTR0202PLT3G by Onsemi

NTR0202PLT3G

Onsemi

NTR0202PLT3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

.4 A

.4 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

MMBF5457LT1G by Onsemi

MMBF5457LT1G

Onsemi

MMBF5457LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 3pF Crss. With a max power dissipation of 0.225W and operating temperature up to 150°C, it is suitable for small outline packages in electronic circuits.

SINGLE

25 V

JUNCTION

3 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON