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.15 W Small Signal Field Effect Transistors (FET) 12

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FK3503010L by Panasonic

FK3503010L

Panasonic

Panasonic FK3503010L is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 0.1A Drain Current, 6 ohm On Resistance, and 150°C Operating Temperature. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.

SINGLE WITH BUILT-IN DIODE

30 V

.1 A

.1 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.15 W

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NVF2201NT1G by Onsemi

NVF2201NT1G

Onsemi

NVF2201NT1G by Onsemi is a N-CHANNEL FET with 0.3A max drain current and 0.15W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.

SINGLE

.3 A

.3 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

.15 W

FET General Purpose Powers

YES

TIN

30

5LP01SS-TL-E by Onsemi

5LP01SS-TL-E

Onsemi

5LP01SS-TL-E by Onsemi is a P-CHANNEL FET with 0.07A max drain current and 0.15W power dissipation. Ideal for applications requiring surface mount technology, such as temperature-sensitive circuits in consumer electronics.

SINGLE

.07 A

.07 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

P-CHANNEL

.15 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

UM5K1NTR by ROHM

UM5K1NTR

ROHM

ROHM UM5K1NTR is a N-CHANNEL FET with 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm max on resistance. Ideal for common source configuration in small outline packages at up to 150°C operating temp.

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.1 A

.1 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G5

e2

2

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

TIN COPPER

GULL WING

DUAL

SWITCHING

SILICON

2N7002T-7 by Diodes Incorporated

2N7002T-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

2N7002V-7 by Diodes Incorporated

2N7002V-7

Diodes Incorporated

2N7002V-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.28A drain current, and 13.5 ohm on-resistance. Ideal for switching applications due to its small outline package and enhancement mode operation. Suitable for surface mount designs with dual terminals and built-in diode elements.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.28 A

.28 A

13.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

MMBF2202PT1G by Onsemi

MMBF2202PT1G

Onsemi

MMBF2202PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 0.3A drain current, and 2.2 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150 °C. Package style is small outline with GULL WING terminals for surface mount assembly.

SINGLE WITH BUILT-IN DIODE

20 V

.3 A

.3 A

2.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.15 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

NTA4151PT1 by Onsemi

NTA4151PT1

Onsemi

NTA4151PT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.54A Drain Current, and 0.36 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals. The transistor operates at up to 150 °C and has a max power dissipation of 0.15W in a SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

20 V

.54 A

.76 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DMN5L06V-7 by Diodes Incorporated

DMN5L06V-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .28 A; No. of Elements: 2;

LOW CAPACITANCE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMN5L06VA-7 by Diodes Incorporated

DMN5L06VA-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOW CAPACITANCE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMN5L06T-7 by Diodes Incorporated

DMN5L06T-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;

LOW CAPACITANCE

SINGLE WITH BUILT-IN DIODE

50 V

.28 A

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

5HN01SS-TL-E by Onsemi

5HN01SS-TL-E

Onsemi

5HN01SS-TL-E by Onsemi is a N-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It has a 50V DS breakdown voltage, 0.1A max drain current, and 7.5 ohm max on resistance. This small outline transistor operates in enhancement mode and features a max power dissipation of 0.15W.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

50 V

.1 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.15 W

.15 W

YES

TIN BISMUTH

FLAT

DUAL

SWITCHING

SILICON