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Nexperia Small Signal Bipolar Junction Transistors (BJT) 187

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PUMD9/ZLX by Nexperia

PUMD9/ZLX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G6; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD9/ZLZ by Nexperia

PUMD9/ZLZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PBSS304NXZ by Nexperia

PBSS304NXZ

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 4.7 A;

COLLECTOR

4.7 A

70 pF

60 V

SINGLE

75

TO-243AA

R-PSSO-F3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.1 W

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

130 MHz

.245 V

PUMD2/ZLH by Nexperia

PUMD2/ZLH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD2/ZLZ by Nexperia

PUMD2/ZLZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMH9/ZLF by Nexperia

PUMH9/ZLF

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMH9/ZLH by Nexperia

PUMH9/ZLH

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.7; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMH9/ZLX by Nexperia

PUMH9/ZLX

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Transistor Element Material: SILICON;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PUMH9/ZLZ by Nexperia

PUMH9/ZLZ

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMB17/ZLX by Nexperia

PUMB17/ZLX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Terminal Position: DUAL;

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PBHV9540XX by Nexperia

PBHV9540XX

Nexperia

Small Signal Bipolar Transistors; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

e3

1

260

AEC-Q101

TIN

30

PRMH13Z by Nexperia

PRMH13Z

Nexperia

Small Signal Bipolar Transistors; Reference Standard: AEC-Q101; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

e3

1

260

AEC-Q101

TIN

30

BC859CW/ZLF by Nexperia

BC859CW/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC859CW/ZLX by Nexperia

BC859CW/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC860CW/ZLF by Nexperia

BC860CW/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC860CW/ZLX by Nexperia

BC860CW/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

PUMH11/ZLF by Nexperia

PUMH11/ZLF

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.3 W

IEC-60134

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

230 MHz

.15 V

BC847QAPN,147 by Nexperia

BC847QAPN,147

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;

COLLECTOR

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

BC857CQA,147 by Nexperia

BC857CQA,147

Nexperia

BC857CQA,147 by Nexperia is a PNP BJT transistor with hFE of 420. It has VCE of 45V and IC of 0.1A, suitable for switching applications. This SOT23-3 packaged transistor operates at a transition frequency of 100MHz, conforming to AEC-Q101 and IEC-60134 standards.

COLLECTOR

.1 A

45 V

SINGLE

420

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

PBHV8515QA,147 by Nexperia

PBHV8515QA,147

Nexperia

Nexperia's PBHV8515QA,147 is a NPN BJT transistor with max. Vce of 150V and Ic of 0.5A. With hFE of 35 and fT of 75MHz, it's ideal for switching applications in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

.5 A

150 V

SINGLE

35

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

75 MHz

PDTA114EQA,147 by Nexperia

PDTA114EQA,147

Nexperia

Nexperia's PDTA114EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. This small outline transistor has a transition frequency of 180MHz and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA123JQA,147 by Nexperia

PDTA123JQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 21

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143EQA,147 by Nexperia

PDTA143EQA,147

Nexperia

Nexperia's PDTA143EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 180MHz. This transistor has a plastic/epoxy body, is surface mountable, and has tin finish terminals.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143XQA,147 by Nexperia

PDTA143XQA,147

Nexperia

Nexperia's PDTA143XQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 50, VCE of 50V, and fT of 180MHz. Its small outline package makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

BUILT IN BIAS RESISTANCE RATIO IS 2.1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143ZQA,147 by Nexperia

PDTA143ZQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA144EQA,147 by Nexperia

PDTA144EQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTB143XQA,147 by Nexperia

PDTB143XQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

150 MHz

PDTC114EQA,147 by Nexperia

PDTC114EQA,147

Nexperia

Nexperia's PDTC114EQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 230MHz. This small outline transistor has tin finish, dual terminals, and can handle IC up to 0.1A.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC114YQA,147 by Nexperia

PDTC114YQA,147

Nexperia

Nexperia's PDTC114YQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 100, VCE of 50V, and fT of 230MHz. It comes in a small outline package with tin finish and can withstand peak reflow temp of 260°C.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC143XQA,147 by Nexperia

PDTC143XQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 2.1;

BUILT IN BIAS RESISTANCE RATIO IS 2.1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC143ZQA,147 by Nexperia

PDTC143ZQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTC144EQA,147 by Nexperia

PDTC144EQA,147

Nexperia

Nexperia's PDTC144EQA,147 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 80, VCE of 50V, and fT of 230MHz. This small outline transistor has tin finish, no lead terminals, and can handle up to 0.1A collector current.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PDTD114EQA,147 by Nexperia

PDTD114EQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 210 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

210 MHz

BC847W-QF by Nexperia

BC847W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC857BS-QF by Nexperia

BC857BS-QF

Nexperia

BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC817-16-QVL by Nexperia

BC817-16-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817-QVL by Nexperia

BC817-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC847A-QVL by Nexperia

BC847A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847B-QVL by Nexperia

BC847B-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

200

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847W-QX by Nexperia

BC847W-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847A-QR by Nexperia

BC847A-QR

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QX by Nexperia

BC847AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QF by Nexperia

BC847AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QX by Nexperia

BC846AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QF by Nexperia

BC846AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846W-QF by Nexperia

BC846W-QF

Nexperia

BC846W-QF by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for small outline packages in automotive and industrial electronics.

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

PUMD3-QZ by Nexperia

PUMD3-QZ

Nexperia

PUMD3-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, hFE of 30, and can handle a max IC of 0.1A. With a package style of small outline and operating temperatures ranging from -65 to 150°C, it meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD3-QH by Nexperia

PUMD3-QH

Nexperia

PUMD3-QH by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 30, and can operate at temperatures up to 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V