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Diodes Incorporated Small Signal Bipolar Junction Transistors (BJT) 564

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT722QTA by Diodes Incorporated

FMMT722QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .806 W; Maximum Collector Current (IC): 1.5 A;

HIGH RELIABILITY

1.5 A

70 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.806 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

ZTX651QSTZ by Diodes Incorporated

ZTX651QSTZ

Diodes Incorporated

ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.

2 A

SINGLE

100

e3

1

200 Cel

260

NPN

1.5 W

Other Transistors

NO

MATTE TIN

30

140 MHz

ZX5T3ZTC by Diodes Incorporated

ZX5T3ZTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 152 MHz; Maximum Collector Current (IC): 5.5 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

COLLECTOR

5.5 A

40 V

SINGLE

110

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

152 MHz

FMMTA42QTA by Diodes Incorporated

FMMTA42QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

HIGH RELIABILITY

.2 A

300 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

50 MHz

DDC114YUQ-13-F by Diodes Incorporated

DDC114YUQ-13-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC115EUAQ-7-F by Diodes Incorporated

DDTC115EUAQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BSR43QTA by Diodes Incorporated

BSR43QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

1 A

80 V

SINGLE

50

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

1000 ns

250 ns

MMDT2907AQ-7-F by Diodes Incorporated

MMDT2907AQ-7-F

Diodes Incorporated

MMDT2907AQ-7-F by Diodes Incorporated is a PNP BJT with 2 elements, ideal for switching applications. It features VCEsat of 1.6V, hFE of 50, and IC of 0.6A. With a max operating temp of 150°C and fT of 200MHz, it's suitable for small outline packages in automotive electronics.

.6 A

8 pF

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

ZXTN04120HP5TC by Diodes Incorporated

ZXTN04120HP5TC

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1.5 A; JESD-609 Code: e3;

HIGH RELIABILITY

COLLECTOR

1.5 A

120 V

DARLINGTON

500

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

BC807-16-7 by Diodes Incorporated

BC807-16-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

60

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-25-7 by Diodes Incorporated

BC807-25-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-40-7 by Diodes Incorporated

BC807-40-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

170

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

DN0150ALP4-7B by Diodes Incorporated

DN0150ALP4-7B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DN0150BLP4-7B by Diodes Incorporated

DN0150BLP4-7B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DP0150ALP4-7B by Diodes Incorporated

DP0150ALP4-7B

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

DP0150BLP4-7B by Diodes Incorporated

DP0150BLP4-7B

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

DZT651-13 by Diodes Incorporated

DZT651-13

Diodes Incorporated

Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Qualification: Not Qualified;

e3

1

260

Not Qualified

Other Transistors

MATTE TIN

30

DCX4710H-7 by Diodes Incorporated

DCX4710H-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

35

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

LMN200B02-7 by Diodes Incorporated

LMN200B02-7

Diodes Incorporated

Small Signal Bipolar Transistors; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

e3

1

260

Not Qualified

Other Transistors

MATTE TIN

30

DDC144NS-7 by Diodes Incorporated

DDC144NS-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

HBDM60V600W-7 by Diodes Incorporated

HBDM60V600W-7

Diodes Incorporated

Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.

.5 A

65 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

DDTC113TLP-7 by Diodes Incorporated

DDTC113TLP-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR, HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

250 MHz

DZT3150-13 by Diodes Incorporated

DZT3150-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

25 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DZT853-13 by Diodes Incorporated

DZT853-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;

COLLECTOR

6 A

100 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

LMN400E01-7 by Diodes Incorporated

LMN400E01-7

Diodes Incorporated

Small Signal Bipolar Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

e3

1

260

Not Qualified

BIP General Purpose Small Signal

MATTE TIN

30

DZT491-13 by Diodes Incorporated

DZT491-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DCP69A-13 by Diodes Incorporated

DCP69A-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

COLLECTOR

1 A

20 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

DCP69A-16-13 by Diodes Incorporated

DCP69A-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

20 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

MMDT3946LP4-7 by Diodes Incorporated

MMDT3946LP4-7

Diodes Incorporated

NPN AND PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-N6

e4

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

300 MHz

70 ns

250 ns

DCP52-13 by Diodes Incorporated

DCP52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP52-16-13 by Diodes Incorporated

DCP52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DMB2227A-7 by Diodes Incorporated

DMB2227A-7

Diodes Incorporated

DMB2227A-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max operating temp of 150°C, it offers a transition frequency of 300 MHz and can handle up to 0.6A collector current.

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

285 ns

35 ns

IMT17-7 by Diodes Incorporated

IMT17-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DCP51-13 by Diodes Incorporated

DCP51-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP51-16-13 by Diodes Incorporated

DCP51-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-13 by Diodes Incorporated

DCP54-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-16-13 by Diodes Incorporated

DCP54-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-13 by Diodes Incorporated

DCP55-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-16-13 by Diodes Incorporated

DCP55-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-13 by Diodes Incorporated

DCP56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-16-13 by Diodes Incorporated

DCP56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DZT591C-13 by Diodes Incorporated

DZT591C-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

EMF21-7 by Diodes Incorporated

EMF21-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

UMG4N-7 by Diodes Incorporated

UMG4N-7

Diodes Incorporated

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

2DB1188P-13 by Diodes Incorporated

2DB1188P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

120 MHz

2DD1664P-13 by Diodes Incorporated

2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

280 MHz

2DD2150R-13 by Diodes Incorporated

2DD2150R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

160 MHz

2DB1132P-13 by Diodes Incorporated

2DB1132P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz