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Diodes Incorporated Small Signal Bipolar Junction Transistors (BJT) 564

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX1149ASTOB by Diodes Incorporated

ZTX1149ASTOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1 W

NO

WIRE

SINGLE

SILICON

135 MHz

.3 V

ZTX1149ASTZ by Diodes Incorporated

ZTX1149ASTZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

135 MHz

.3 V

ZTX1051ASTOB by Diodes Incorporated

ZTX1051ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1051ASTZ by Diodes Incorporated

ZTX1051ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

LOW NOISE

4 A

40 pF

40 V

SINGLE

45

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

155 MHz

.21 V

ZTX1048ASTOB by Diodes Incorporated

ZTX1048ASTOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTOA by Diodes Incorporated

ZTX1048ASTOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

1 W

NO

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.245 V

ZTX1048ASTZ by Diodes Incorporated

ZTX1048ASTZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

4 A

80 pF

17.5 V

SINGLE

50

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SWITCHING

SILICON

150 MHz

.245 V

FMMT720-7 by Diodes Incorporated

FMMT720-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

25 pF

40 V

SINGLE

12

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

190 MHz

.33 V

BC847AQ-7-F by Diodes Incorporated

BC847AQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

BC848CQ-7-F by Diodes Incorporated

BC848CQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

BC857BSQ-7-F by Diodes Incorporated

BC857BSQ-7-F

Diodes Incorporated

Diodes Inc. BC857BSQ-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 45V, max. collector current of 0.1A, and min. DC current gain of 220 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.

HIGH RELIABILITY

.1 A

45 V

SEPARATE, 2 ELEMENTS

220

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

DCX114EUQ-13-F by Diodes Incorporated

DCX114EUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX114YUQ-13-F by Diodes Incorporated

DCX114YUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX114YUQ-13R-F by Diodes Incorporated

DCX114YUQ-13R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX124EUQ-13-F by Diodes Incorporated

DCX124EUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX124EUQ-13R-F by Diodes Incorporated

DCX124EUQ-13R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DDA114EUQ-7-F by Diodes Incorporated

DDA114EUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;

.05 A

30

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114TUQ-13-F by Diodes Incorporated

DDA114TUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

.1 A

100

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114TUQ-7-F by Diodes Incorporated

DDA114TUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

100

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114YUQ-7-F by Diodes Incorporated

DDA114YUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;

.07 A

68

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA124EUQ-13-F by Diodes Incorporated

DDA124EUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;

.03 A

60

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA124EUQ-7-F by Diodes Incorporated

DDA124EUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 60;

.03 A

60

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA143TUQ-13-F by Diodes Incorporated

DDA143TUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Transistor Element Material: SILICON;

.1 A

160

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA143TUQ-7-F by Diodes Incorporated

DDA143TUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;

.1 A

160

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA144EUQ-7-F by Diodes Incorporated

DDA144EUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

.03 A

68

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDC114TUQ-7-F by Diodes Incorporated

DDC114TUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DDC114YUQ-7-F by Diodes Incorporated

DDC114YUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDC124EUQ-7-F by Diodes Incorporated

DDC124EUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114ECAQ-13-F by Diodes Incorporated

DDTA114ECAQ-13-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114ECAQ-7-F by Diodes Incorporated

DDTA114ECAQ-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC123ECAQ-7-F by Diodes Incorporated

DDTC123ECAQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC124EUAQ-13-F by Diodes Incorporated

DDTC124EUAQ-13-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC143TCAQ-13-F by Diodes Incorporated

DDTC143TCAQ-13-F

Diodes Incorporated

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;

.1 A

100

e3

1

1

260

NPN

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

DDTC143TCAQ-7-F by Diodes Incorporated

DDTC143TCAQ-7-F

Diodes Incorporated

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; No. of Elements: 1;

.1 A

100

e3

1

1

260

NPN

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

FMMT717QTA by Diodes Incorporated

FMMT717QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Collector Current (IC): 2.5 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

2.5 A

12 V

SINGLE

45

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

110 MHz

FMMT625QTA by Diodes Incorporated

FMMT625QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 135 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

150 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

135 MHz

ZXT13N50DE6QTA by Diodes Incorporated

ZXT13N50DE6QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;

HIGH RELIABILITY

4 A

50 V

SINGLE

10

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

115 MHz

ZXT13P40DE6QTA by Diodes Incorporated

ZXT13P40DE6QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

3 A

40 V

SINGLE

15

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.7 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

115 MHz

FMMT491AQTC by Diodes Incorporated

FMMT491AQTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

40 V

SINGLE

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

FMMT560QTC by Diodes Incorporated

FMMT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

HIGH RELIABILITY

.15 A

500 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

FZT489QTA by Diodes Incorporated

FZT489QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

1 A

30 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

150 MHz

ZXTC6717MCQTA by Diodes Incorporated

ZXTC6717MCQTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4.5 A; Terminal Form: NO LEAD;

HIGH RELIABILITY

COLLECTOR

4.5 A

15 V

SEPARATE, 2 ELEMENTS

150

R-PDSO-N8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

120 MHz

ZXTC6718MCQTA by Diodes Incorporated

ZXTC6718MCQTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 4.5 A; No. of Elements: 2;

HIGH RELIABILITY

COLLECTOR

4.5 A

20 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-N8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

30

SWITCHING

SILICON

140 MHz

2DA1971-13 by Diodes Incorporated

2DA1971-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

HIGH RELIABILITY

COLLECTOR

.5 A

400 V

SINGLE

140

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

75 MHz

BCX6825QTA by Diodes Incorporated

BCX6825QTA

Diodes Incorporated

BCX6825QTA by Diodes Inc. is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

FMMT491QTC by Diodes Incorporated

FMMT491QTC

Diodes Incorporated

FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.

HIGH RELIABILITY

1 A

60 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

ZXTC2045E6QTA by Diodes Incorporated

ZXTC2045E6QTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 265 MHz; Maximum Collector Current (IC): 1.5 A; No. of Elements: 2;

HIGH RELIABILITY

1.5 A

30 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

265 MHz

BCV46QTA by Diodes Incorporated

BCV46QTA

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

HIGH RELIABILITY

.5 A

60 V

DARLINGTON

2000

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz