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40 MHz Small Signal Bipolar Junction Transistors (BJT) 14

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N5087BU by Fairchild Semiconductor

2N5087BU

Fairchild Semiconductor

2N5087BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

LOW NOISE

.1 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

2N5087G by Onsemi

2N5087G

Onsemi

2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.

.05 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

2N6520RLRAG by Onsemi

2N6520RLRAG

Onsemi

2N6520RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 350V, max. power dissipation of 1.5W, and min. DC current gain of 15. Ideal for switching applications due to its high transition frequency of 40MHz and low turn-on time of 200ns. Package style is cylindrical with through-hole terminals for easy mounting.

.5 A

350 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

40 MHz

3500 ns

200 ns

MMBT6517LT1G by Onsemi

MMBT6517LT1G

Onsemi

MMBT6517LT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 350V, max collector current of 0.1A, and min DC current gain of 15. This small outline package with Gull Wing terminals operates up to 150 °C and has a transition frequency of 40MHz.

.1 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

40 MHz

MMBT6517LT3G by Onsemi

MMBT6517LT3G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;

.1 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

40 MHz

2N5087RLRAG by Onsemi

2N5087RLRAG

Onsemi

2N5087RLRAG by Onsemi is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

LOW NOISE

.05 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

2N6515RLRMG by Onsemi

2N6515RLRMG

Onsemi

2N6515RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for switching applications. It has a min. DC current gain of 25 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.

.5 A

250 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

40 MHz

3500 ns

200 ns

2N6517G by Onsemi

2N6517G

Onsemi

2N6517G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V and max. collector current of 0.5A. It has a min. DC current gain of 15, making it suitable for switching applications with a max. power dissipation of 0.625W. The transistor operates at up to 150 °C and has a nominal transition frequency of 40MHz, ideal for high-speed switching circuits.

.5 A

350 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

40 MHz

3500 ns

200 ns

2N6517RLRAG by Onsemi

2N6517RLRAG

Onsemi

2N6517RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used for switching applications due to its single configuration and cylindrical package style, operating at a max temp of 150 °C.

.5 A

350 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

40 MHz

3500 ns

200 ns

2N6517RLRPG by Onsemi

2N6517RLRPG

Onsemi

2N6517RLRPG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, ideal for switching applications. It has a min. DC current gain of 15 and max. operating temp. of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.

.5 A

350 V

SINGLE

15

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

40 MHz

3500 ns

200 ns

MMBT6520LT3G by Onsemi

MMBT6520LT3G

Onsemi

MMBT6520LT3G by Onsemi is a PNP BJT transistor with 350V VCEO, 0.5A IC, and 40MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150 °C, it offers a min hFE of 15 and 0.225W power dissipation.

.5 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

40 MHz

FMMT416TA by Diodes Incorporated

FMMT416TA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

.5 A

8 pF

100 V

SINGLE

100

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

40 MHz

.1 V

NSVMMBT6517LT1G by Onsemi

NSVMMBT6517LT1G

Onsemi

NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.

.1 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

AEC-Q101

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

40 MHz

FMMT411TD by Diodes Incorporated

FMMT411TD

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .9 A;

.9 A

15 pF

15 V

SINGLE

100

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.8 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

40 MHz

.1 V