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.9 W Small Signal Bipolar Junction Transistors (BJT) 12

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
CPH3121-TL-E by Onsemi

CPH3121-TL-E

Onsemi

CPH3121-TL-E by Onsemi is a PNP BJT transistor with max power dissipation of 0.9W, hFE of 200, and IC of 3A. Ideal for surface mount applications in electronics due to its high operating temp of 150 °C and peak reflow temp of 260°C within 30s.

3 A

SINGLE

200

e6

1

1

150 Cel

260

PNP

.9 W

Other Transistors

YES

TIN BISMUTH

30

STBV68 by STMicroelectronics

STBV68

STMicroelectronics

STBV68 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.6A, ideal for switching applications. It has a min DC current gain of 3 and can handle up to 0.9W power dissipation, suitable for through-hole mounting in various electronic circuits at temperatures up to 150 °C.

.6 A

400 V

SINGLE

3

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STX2220 by STMicroelectronics

2STX2220

STMicroelectronics

2STX2220 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, a collector current of 1.5A, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

1.5 A

20 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX817A by STMicroelectronics

STX817A

STMicroelectronics

STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.

1.5 A

80 V

SINGLE

25

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

STX715 by STMicroelectronics

STX715

STMicroelectronics

STX715 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages up to 80 V. Ideal for efficient circuit designs with its cylindrical package and through-hole terminals.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STX790A by STMicroelectronics

STX790A

STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STX690A by STMicroelectronics

STX690A

STMicroelectronics

STX690A by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, a collector current of 3 A, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STX790A-AP by STMicroelectronics

STX790A-AP

STMicroelectronics

STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STX826 by STMicroelectronics

STX826

STMicroelectronics

STX826 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STX715-AP by STMicroelectronics

STX715-AP

STMicroelectronics

STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

ZXPD4000DH-7 by Diodes Incorporated

ZXPD4000DH-7

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;

2 A

120 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

S-PDSO-N8

e4

1

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

.9 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

AMPLIFIER

SILICON

1.5 V

2SC2655-Y(TE6,F,M) by Toshiba

2SC2655-Y(TE6,F,M)

Toshiba

The 2SC2655-Y(TE6,F,M) by Toshiba is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 2A. It is commonly used for switching applications due to its low VCEsat of 0.5V.

2 A

30 pF

50 V

SINGLE

120

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

.9 W

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V