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.338 W Small Signal Bipolar Junction Transistors (BJT) 7

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DTC144TT1 by Onsemi

DTC144TT1

Onsemi

DTC144TT1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This surface-mount transistor in a small outline package is ideal for compact electronic designs.

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

160

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

EMG2DXV5T1 by Onsemi

EMG2DXV5T1

Onsemi

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .338 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

EMG5DXV5T1 by Onsemi

EMG5DXV5T1

Onsemi

The Onsemi EMG5DXV5T1 is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

MUN2111T3G by Onsemi

MUN2111T3G

Onsemi

MUN2111T3G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface mount transistor comes in a small outline package with Gull Wing terminals.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

EMG2DXV5T1G by Onsemi

EMG2DXV5T1G

Onsemi

The Onsemi EMG2DXV5T1G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

EMG2DXV5T5G by Onsemi

EMG2DXV5T5G

Onsemi

The Onsemi EMG2DXV5T5G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max operating temp of 150 °C, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

NSVMUN2236T1G by Onsemi

NSVMUN2236T1G

Onsemi

NSVMUN2236T1G by Onsemi is a NPN BJT with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150 °C and peak reflow temp of 260°C. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.25 V