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.8 A Small Signal Bipolar Junction Transistors (BJT) 26

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCW68GE6327HTSA1 by Infineon Technologies

BCW68GE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCW67BE6327HTSA1 by Infineon Technologies

BCW67BE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

.8 A

32 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCW68FE6327HTSA1 by Infineon Technologies

BCW68FE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;

.8 A

45 V

SINGLE

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCX41E6433HTMA1 by Infineon Technologies

BCX41E6433HTMA1

Infineon Technologies

BCX41E6433HTMA1 by Infineon Technologies is a NPN BJT transistor with hFE of 40, VCE of 125V, and IC of 0.8A. It is used for switching applications in surface mount designs due to its small outline package style and high transition frequency of 100MHz.

.8 A

125 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX42E6433HTMA1 by Infineon Technologies

BCX42E6433HTMA1

Infineon Technologies

Infineon BCX42E6433HTMA1 is a PNP BJT transistor for switching applications. Features include hFE of 40, VCE of 125V, and IC of 0.8A. With a fT of 150MHz, it's ideal for small outline surface mount designs requiring high-speed switching capabilities.

.8 A

125 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCW66KGE6327HTSA1 by Infineon Technologies

BCW66KGE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;

.8 A

45 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BCX38CSTOB by Zetex Plc

BCX38CSTOB

Zetex Plc

BCX38CSTOB by Zetex Plc is a NPN Darlington transistor with max VCEsat of 1.25V, hFE of 10000, and IC of 0.8A. Ideal for switching applications due to its high current gain and low saturation voltage. This rectangular plastic transistor operates up to 200°C making it suitable for various industrial uses.

.8 A

60 V

DARLINGTON

10000

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

2 W

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

1.25 V

BC32725TAR by Fairchild Semiconductor

BC32725TAR

Fairchild Semiconductor

BC32725TAR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 45V and a max collector current of 0.8A. It has a min DC current gain of 100, making it suitable for switching applications up to 100MHz. The package style is cylindrical with a plastic/epoxy body material and matte tin terminal finish, featuring through-hole terminals in a round shape.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC817-16-7 by Diodes Incorporated

BC817-16-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC817-25-7 by Diodes Incorporated

BC817-25-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC817-40-7 by Diodes Incorporated

BC817-40-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

170

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC327-016 by Onsemi

BC327-016

Onsemi

BC327-016 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.8A, and min DC current gain of 100. With a package style of cylindrical and max power dissipation of 0.625W, it operates at up to 150 °C.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-040 by Onsemi

BC327-040

Onsemi

BC327-040 by Onsemi is a PNP BJT transistor with hFE of 250, IC of 0.8A, and fT of 260MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and collector-emitter voltage of 45V. This through-hole transistor has a cylindrical package shape made from silicon material.

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-40ZL1G by Onsemi

BC327-40ZL1G

Onsemi

BC327-40ZL1G by Onsemi is a PNP BJT transistor with hFE of 250, VCEO of 45V, and IC of 0.8A. Ideal for amplifier applications due to its high transition frequency of 260MHz and max power dissipation of 0.625W in a cylindrical package. Operating temperature ranges from -55 to 150°C making it suitable for various electronic designs.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC337-40RL1G by Onsemi

BC337-40RL1G

Onsemi

BC337-40RL1G by Onsemi is a NPN BJT transistor with hFE of 250, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates b/w -55 to 150 °C. Package style is cylindrical with through-hole terminals.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC327-16ZL1G by Onsemi

BC327-16ZL1G

Onsemi

BC327-16ZL1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 45V and max current of 0.8A. Ideal for amplifier applications, it has a min DC current gain of 100 and operates up to 150 °C. Its package style is cylindrical with through-hole terminals.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-25ZL1G by Onsemi

BC327-25ZL1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327RL1G by Onsemi

BC327RL1G

Onsemi

BC327RL1G by Onsemi is a PNP BJT transistor with hFE of 100, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications due to its cylindrical package style and max operating temperature of 150 °C. Its silicon element material ensures reliable performance in various electronic circuits.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

260 MHz

BC337-16RL1G by Onsemi

BC337-16RL1G

Onsemi

BC337-16RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. Ideal for amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A in a cylindrical package style.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

210 MHz

BC337ZL1G by Onsemi

BC337ZL1G

Onsemi

BC337ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. It is commonly used in amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A, making it suitable for various electronic circuits requiring signal amplification.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC338-25ZL1G by Onsemi

BC338-25ZL1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A;

EUROPEAN PART NUMBER

.8 A

25 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

KTC4373O-TP by Micro Commercial Components

KTC4373O-TP

Micro Commercial Components

KTC4373O-TP by Micro Commercial Components is a NPN BJT with hFE of 80, VCE of 120V, and IC of 0.8A. Ideal for small outline applications requiring high transition frequency up to 120MHz in temperatures up to 150°C.

LOW NOISE

.8 A

120 V

SINGLE

80

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

FLAT

SINGLE

10

SILICON

120 MHz

KTC4373Y-TP by Micro Commercial Components

KTC4373Y-TP

Micro Commercial Components

KTC4373Y-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 120V, and fT of 120MHz. Ideal for small signal applications in electronics due to its high gain, low collector current, and fast transition frequency. Suitable for surface mount designs requiring compact outline and high temperature tolerance up to 150°C.

LOW NOISE

.8 A

120 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

FLAT

SINGLE

10

SILICON

120 MHz

BC337-25RLRAG by Onsemi

BC337-25RLRAG

Onsemi

BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.

.8 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BCW66KG-E6433 by Infineon Technologies

BCW66KG-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.5 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

BCW66KHB6327HTLA1 by Infineon Technologies

BCW66KHB6327HTLA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.8 A

45 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz