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.02 A Small Signal Bipolar Junction Transistors (BJT) 21

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DDTC115EUAQ-7-F by Diodes Incorporated

DDTC115EUAQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

MAT12AHZ by Analog Devices

MAT12AHZ

Analog Devices

MAT12AHZ by Analog Devices is a NPN BJT with 2 elements & built-in diode. It has hFE of 300, fT of 200 MHz, & IC of 0.02 A. Ideal for amplifier applications due to its high gain, low collector-emitter voltage of 40 V, & operating temperature up to 150°C.

LOW NOISE

SUBSTRATE

.02 A

40 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

300

O-MBCY-W6

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

200 MHz

PDTA115EE,115 by NXP Semiconductors

PDTA115EE,115

NXP Semiconductors

PDTA115EE,115 by NXP Semiconductors is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.02A, and power dissipation of 0.15W. This surface-mount transistor operates at up to 150°C and comes in a small outline package suitable for various electronic devices.

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC115EEF,115 by NXP Semiconductors

PDTC115EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .02 A; JESD-30 Code: R-PDSO-F3; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

MAT03EHZ by Analog Devices

MAT03EHZ

Analog Devices

MAT03EHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a max VCEsat of 0.1V, hFE of 100, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

MAT03FHZ by Analog Devices

MAT03FHZ

Analog Devices

MAT03FHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a VCEsat of 0.1V, hFE of 80, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

PDTC115EE,115 by NXP Semiconductors

PDTC115EE,115

NXP Semiconductors

NXP Semiconductors' PDTC115EE,115 is a NPN BJT with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.02A max collector current, and 80 min DC current gain. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DDTC115ECA-7 by Diodes Incorporated

DDTC115ECA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA115EUA-7 by Diodes Incorporated

DDTA115EUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Moisture Sensitivity Level (MSL): 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC115EE-7 by Diodes Incorporated

DDTC115EE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA115ECA-7-F by Diodes Incorporated

DDTA115ECA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .02 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115EKA-7-F by Diodes Incorporated

DDTA115EKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .02 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC115EE-7-F by Diodes Incorporated

DDTC115EE-7-F

Diodes Incorporated

DDTC115EE-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. Features include hFE of 82, VCE of 50V, and IC of 0.02A. With a transition frequency of 250MHz, it operates up to 150°C making it suitable for various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC115EKA-7-F by Diodes Incorporated

DDTC115EKA-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .02 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115EE-7-F by Diodes Incorporated

DDTA115EE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

SSM2220PZ by Analog Devices

SSM2220PZ

Analog Devices

SSM2220PZ by Analog Devices is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. It has a min hFE of 80, max operating temp of 150 °C, and max VCE of 36V. The transistor's package style is in-line with through-hole terminals and a transition frequency of 190MHz.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

AMPLIFIER

SILICON

190 MHz

SSM2220SZ-REEL by Analog Devices

SSM2220SZ-REEL

Analog Devices

Analog Devices' SSM2220SZ-REEL is a PNP BJT with 2 elements, built-in diode, and hFE of 80. Ideal for amplifier applications, it operates up to 150°C with VCE max of 36V. This surface-mount transistor has a package style of SOIC-8 and fT of 190MHz.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

190 MHz

SSM2220SZ by Analog Devices

SSM2220SZ

Analog Devices

Analog Devices' SSM2220SZ is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. With a max operating temp of 150 °C, it offers hFE of 80 and VCE of 36V. This surface-mount transistor has a transition frequency of 190MHz in a small outline package.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

190 MHz

SSM2212RZ-RL by Analog Devices

SSM2212RZ-RL

Analog Devices

Analog Devices' SSM2212RZ-RL is a NPN BJT with 2 elements, built-in diode, and max VCEsat of 0.2V. Ideal for amplifier applications, it has hFE of 300, operates up to 150 °C, and handles IC up to 0.02A. With a transition frequency of 200MHz, this transistor is surface mountable in a small outline package.

.02 A

40 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

300

MS-012AA

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

200 MHz

.2 V

SSM2212RZ by Analog Devices

SSM2212RZ

Analog Devices

SSM2212RZ by Analog Devices is a small signal NPN bipolar junction transistor (BJT) with a max VCEsat of 0.2V and a min DC current gain (hFE) of 300. It is commonly used as an amplifier in various applications due to its high transition frequency of 200MHz.

LOW NOISE

.02 A

40 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

300

MS-012AA

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

200 MHz

.2 V

SSM2212CPZ-RL by Analog Devices

SSM2212CPZ-RL

Analog Devices

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Package Style (Meter): CHIP CARRIER;

.02 A

40 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

200

S-PQCC-N16

e3

3

2

16

150 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

NPN

YES

Matte Tin (Sn) - annealed

NO LEAD

QUAD

30

AMPLIFIER

SILICON

200 MHz