Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO4413L
Alpha & Omega Semiconductor
AO4413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 15A ID, 0.0085 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and RECTANGULAR package shape, it's designed for high-power efficiency in various electronic systems.
SINGLE WITH BUILT-IN DIODE
30 V
15 A
.0085 ohm
METAL-OXIDE SEMICONDUCTOR
1067 pF
R-PDSO-G8
1
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
3 W
80 A
YES
GULL WING
DUAL
SWITCHING
SILICON
AON6411
AON6411 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 340A IDM and 245mJ EAS, operating in ENHANCEMENT MODE at -55 to 150 °C. The METAL-OXIDE SEMICONDUCTOR technology ensures 0.0036 ohm RDS(ON) and 1395pF Crss for efficient performance.
245 mJ
DRAIN
20 V
85 A
.0036 ohm
1395 pF
R-PDSO-F8
156 W
340 A
FLAT
FQD3P50TM_F085
Fairchild Semiconductor
FQD3P50TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 8.4A and EAS of 250mJ, operating in ENHANCEMENT MODE at up to 150°C.
250 mJ
500 V
2.1 A
4.9 ohm
TO-252
R-PSSO-G2
e3
2
260
50 W
8.4 A
Not Qualified
Other Transistors
Matte Tin (Sn)
SINGLE
30
NTD2955PT4G
Onsemi
NTD2955PT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max IDM and 0.18 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. With a compact GULL WING package style and 175°C Max Operating Temp, it offers high power dissipation of 55W in various electronic designs.
216 mJ
60 V
12 A
.18 ohm
175 Cel
55 W
36 A
TIN
NTBV5605T4G
The Onsemi NTBV5605T4G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 55A IDM and 0.14 ohm RDS(ON), suitable for high-power operations. With a max power dissipation of 88W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
338 mJ
18.5 A
.14 ohm
88 W
55 A
MATTE TIN
NTDV20P06LT4G
NTDV20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it offers efficient performance in various electronic designs.
304 mJ
15.5 A
.15 ohm
120 pF
65 W
50 A
AEC-Q101
185 ns
200 ns
STD3PK50Z
STMicroelectronics
STD3PK50Z by STMicroelectronics is a P-CHANNEL FET for switching applications. It features a 500V DS breakdown voltage, 11.2A max pulsed drain current, and 4 ohm max drain-source resistance. With a small outline package style and operating temperature range of -55 to 150°C, it's ideal for power management in various electronic devices.
2.8 A
4 ohm
70 W
11.2 A
Matte Tin (Sn) - annealed
NVD5117PLT4G
NVD5117PLT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 419A IDM, and 0.022 ohm RDS(on). Ideal for power applications requiring high drain current handling capabilities. Suitable for use in enhancement mode operation at up to 175°C operating temperature.
240 mJ
61 A
11 A
.022 ohm
NOT SPECIFIED
118 W
419 A
TT8J11TCR
ROHM
ROHM's TT8J11TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 3.5A Drain Current, 0.043 ohm On Resistance. With small outline package and max temp of 150°C, it suits various electronic designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
12 V
3.5 A
.043 ohm
1.25 W
10
TT8J13TCR
ROHM TT8J13TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5A IDM, and 0.062 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and small outline package style.
2.5 A
.062 ohm
5 A
RP1H065SPTR
ROHM RP1H065SPTR is a P-CHANNEL FET with 45V DS Breakdown Voltage and 6.5A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.046 ohm RDS(ON) and 26A IDM.
45 V
6.5 A
.046 ohm
R-PDSO-F6
6
26 A
SUD50P04-13L-GE3
Vishay Intertechnology
Vishay Intertechnology's SUD50P04-13L-GE3 is a P-channel FET with 40V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, 0.013 ohm RDS(on), and 100A pulsed drain current. Suitable for enhancement mode operation in power electronics due to its high performance and small outline package style.
80 mJ
40 V
.013 ohm
100 A
DMP2070UCB6-7
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Maximum Pulsed Drain Current (IDM): 12 A; Package Style (Meter): GRID ARRAY;
38 pF
R-PBGA-B6
e1
GRID ARRAY
1.47 W
TIN SILVER COPPER
BALL
BOTTOM
DMP2035UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .045 ohm; Package Shape: RECTANGULAR;
HIGH RELIABILITY
6 A
5.2 A
.045 ohm
R-PDSO-G6
2 W
24 A
UPA2813T1L-E2-AT
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 30 V;
27 A
.0062 ohm
52 W
STD25P03LT4G
The Onsemi STD25P03LT4G is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.08 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. This MOSFET comes in a PLASTIC/EPOXY package with GULL WING terminals, meeting AEC-Q101 standards.
200 mJ
25 A
.08 ohm
75 A
STP10P6F6
STP10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 80mJ EAS, and 0.116 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 30W power dissipation.
10 A
.116 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
30 W
40 A
NO
THROUGH-HOLE
UPA2670T1R-E2-AX
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-609 Code: e4; Maximum Drain Current (Abs) (ID): 3 A; Terminal Finish: NICKEL PALLADIUM GOLD;
3 A
e4
2.3 W
NICKEL PALLADIUM GOLD
UPA2735GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED;
16 A
2.5 W
UPA2736GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 14 A;
14 A
UPA2737GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 11 A;
UPA2738GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 10 A; Maximum Drain Current (Abs) (ID): 10 A;
UPA2812T1L-E2-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .0048 ohm;
30 A
.0048 ohm
UPA2630T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: NICKEL PALLADIUM GOLD;
7 A
UPA2631T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
RSS050P03FU6TB
ROHM's RSS050P03FU6TB is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, such as power management systems. Operating up to 150°C, it offers reliability in various industrial settings.
UPA2739T1A-E2-AY
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 160 mJ; Package Style (Meter): SMALL OUTLINE;
160 mJ
.0028 ohm
R-PDSO-N8
83 W
180 A
NO LEAD
BSO207PHXUMA1
Infineon Technologies
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Maximum Drain-Source On Resistance: .045 ohm; Terminal Position: DUAL;
44 mJ
22.8 A
BSZ120P03NS3EGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ESD PROTECTED; Terminal Finish: TIN; Terminal Position: DUAL;
ESD PROTECTED
73 mJ
.02 ohm
S-PDSO-N8
SQUARE
160 A
BSO200P03SHXUMA1
Infineon's BSO200P03SHXUMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 36.4A IDM. Ideal for power applications, it features a built-in diode, 0.02 ohm RDS(on), and 98mJ EAS rating. Suitable for enhancement mode operation in various electronic devices due to its small outline package and GULL WING terminals.
LOGIC LEVEL COMPATIBLE
98 mJ
7.4 A
36.4 A
BSO203SPHXUMA1
Infineon BSO203SPHXUMA1 is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35.6A IDM, and 0.021 ohm RDS(on). Ideal for power management applications due to its small outline package style and high drain current capability. Operating in enhancement mode, it offers efficient performance in various electronic devices.
97 mJ
5.7 A
.021 ohm
35.6 A
SPP08P06PHXKSA1
SPP08P06PHXKSA1 by Infineon Technologies is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 35.2A IDM. Ideal for applications requiring high drain current handling, such as power supplies and motor control systems. Features include a built-in diode, 0.3 ohm RDS(on), and 70mJ EAS rating.
AVALANCHE RATED
70 mJ
8.8 A
.3 ohm
35.2 A
BSO080P03NS3EGXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 149 mJ; Moisture Sensitivity Level (MSL): 3;
149 mJ
9.8 A
.008 ohm
48 A
IPD068P03L3GBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .0068 ohm;
70 A
.0068 ohm
280 A
BSC130P03LSGAUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 30 V;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
148 mJ
90 A
BSC200P03LSGAUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
9.9 A
IPD042P03L3GBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
269 mJ
BSO303PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 7 A; JESD-609 Code: e3;
32.8 A
SPP18P06PHXKSA1
SPP18P06PHXKSA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.8A IDM, and 0.13 ohm RDS(on). It is used in power applications due to its 81.1W Power Dissipation, 151mJ EAS rating, and -55 to +175°C Operating Temperature range.
151 mJ
18.7 A
.13 ohm
81.1 W
74.8 A
BSO613SPVGHUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; No. of Elements: 1;
150 mJ
3.44 A
13.8 A
BSO080P03NS3GXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Transistor Element Material: SILICON;
BSO211PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.2 A; No. of Elements: 2; Maximum Drain-Source On Resistance: .067 ohm;
28 mJ
3.2 A
.067 ohm
18.4 A
BSO303SPHXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
7.2 A
SPP15P10PHXKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB;
230 mJ
100 V
.24 ohm
60 A
BSL207SPL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
.041 ohm
BSL211SPL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
26 mJ
4.7 A
18.8 A
BSL307SPL6327HTSA1
Infineon's BSL307SPL6327HTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 22A IDM, and 0.043 ohm RDS(on). Ideal for power management applications due to its small outline package, high drain current capacity, and low on-resistance. Operating in enhancement mode with a max temperature of 150°C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
5.5 A
22 A
SPB08P06PGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
TO-263AB
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