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88.2 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTP27N06 by Onsemi

NTP27N06

Onsemi

NTP27N06 by Onsemi is a power FET with 60V DS breakdown voltage, 80A IDM, and 0.046 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 88.2W and can withstand temperatures up to 175 °C.

109 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

27 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

88.2 W

80 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB30N06LT4 by Onsemi

NTB30N06LT4

Onsemi

NTB30N06LT4 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. Ideal for SWITCHING applications, it features a 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE up to 175 °C.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

88.2 W

90 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB30N06L by Onsemi

NTB30N06L

Onsemi

The Onsemi NTB30N06L is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 90A Pulsed Drain Current, and 0.046 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

88.2 W

90 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTP27N06L by Onsemi

NTP27N06L

Onsemi

NTP27N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A Max ID, and 0.048 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has 80A IDM and 94mJ EAS ratings.

94 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

27 A

.048 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

88.2 W

80 A

Not Qualified

FET General Purpose Powers

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP30N06L by Onsemi

NTP30N06L

Onsemi

NTP30N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. It is used for SWITCHING applications due to its 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 88.2W at 175 °C temperature.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

88.2 W

90 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP30N06 by Onsemi

NTP30N06

Onsemi

NTP30N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.042 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 88.2W and can handle up to 175 °C temperature.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

27 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

88.2 W

80 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB30N06LG by Onsemi

NTB30N06LG

Onsemi

NTB30N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A Drain Current, 0.046 ohm On Resistance, and 88.2W Power Dissipation in a SMALL OUTLINE package. Operating at up to 175 °C, it offers high performance in various electronic devices.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

88.2 W

90 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

NTB30N06LT4G by Onsemi

NTB30N06LT4G

Onsemi

NTB30N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 90A Pulsed Drain Current, and 0.046 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

88.2 W

90 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP27N06G by Onsemi

NTP27N06G

Onsemi

NTP27N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.046 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 88.2W at 175 °C.

109 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

27 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

88.2 W

80 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB30N06G by Onsemi

NTB30N06G

Onsemi

The Onsemi NTB30N06G is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM and 0.042 ohm RDS(ON), operating in ENHANCEMENT MODE. With a max power dissipation of 88.2W, this transistor is suitable for high-power electronic devices.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

27 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

88.2 W

80 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB30N06T4G by Onsemi

NTB30N06T4G

Onsemi

NTB30N06T4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A Max Pulsed Drain Current, 0.042 ohm Max RDS(on), and 101mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE, has a max temp of 175 °C, and comes in a SMALL OUTLINE package style.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

27 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

88.2 W

80 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTP30N06LG by Onsemi

NTP30N06LG

Onsemi

NTP30N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. Ideal for SWITCHING applications due to its 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

88.2 W

90 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVTFS015P03P8ZTAG by Onsemi

NVTFS015P03P8ZTAG

Onsemi

NVTFS015P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 353A IDM and 88mJ EAS, suitable for high-power operations. With -55 to 175 °C operating range and AEC-Q101 standard, it ensures reliable performance in automotive environments.

88 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

875 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

88.2 W

353 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON