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68 W Power Field Effect Transistors (FET) 20

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STL7NM60N by STMicroelectronics

STL7NM60N

STMicroelectronics

STL7NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It has a Max IDM of 5.6A and EAS of 119mJ, operating in ENHANCEMENT MODE. The transistor features a 0.9 ohm RDS(on) and can handle up to 68W power dissipation, suitable for high-power circuits.

119 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

5.8 A

5.8 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

S-PQCC-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

N-CHANNEL

68 W

5.6 A

YES

Matte Tin (Sn)

NO LEAD

QUAD

SWITCHING

SILICON

IRFZ34NSTRR by International Rectifier

IRFZ34NSTRR

International Rectifier

IRFZ34NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.04 ohm RDS(on), and 175°C max operating temp. Suitable for surface mount designs in power electronics due to its high current handling capability and low on-resistance.

AVALANCHE RATED, HIGH RELIABILITY

130 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

29 A

29 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

225

N-CHANNEL

68 W

100 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

BLF145,112 by NXP Semiconductors

BLF145,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Maximum Drain-Source On Resistance: .75 ohm;

ISOLATED

SINGLE

65 V

6 A

6 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

O-CRFM-F4

NOT APPLICABLE

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

68 W

68 W

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

NTD5413NT4G by Onsemi

NTD5413NT4G

Onsemi

NTD5413NT4G by Onsemi is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 84A and EAS of 135mJ, suitable for high-power operations. With a 0.026 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, making it versatile for various industrial uses.

135 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

84 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP065N04NG by Infineon Technologies

IPP065N04NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 50 A;

50 mJ

SINGLE WITH BUILT-IN DIODE

40 V

50 A

50 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

68 W

350 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPU050N03LG by Infineon Technologies

IPU050N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0073 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

68 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS5C450NLT3G by Onsemi

NVMFS5C450NLT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

110 A

110 A

.0044 ohm

METAL SEMICONDUCTOR

42 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

740 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C450NLWFT1G by Onsemi

NVMFS5C450NLWFT1G

Onsemi

NVMFS5C450NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in the temperature range of -55 to 175 °C, it offers high power dissipation at 68W.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

110 A

110 A

.0044 ohm

METAL SEMICONDUCTOR

42 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

740 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C450NLWFT3G by Onsemi

NVMFS5C450NLWFT3G

Onsemi

NVMFS5C450NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

110 A

110 A

.0044 ohm

METAL SEMICONDUCTOR

42 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

740 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C450NT1G by Onsemi

NVMFS5C450NT1G

Onsemi

NVMFS5C450NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 554A IDM, and 0.0033 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 compliance.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

102 A

102 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

554 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C450NWFT1G by Onsemi

NVMFS5C450NWFT1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 28 pF;

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

102 A

102 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

554 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C450NWFT3G by Onsemi

NVMFS5C450NWFT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Maximum Drain-Source On Resistance: .0033 ohm; Terminal Finish: Matte Tin (Sn) - annealed;

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

102 A

102 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

554 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS5C450NLT3G by Onsemi

NTMFS5C450NLT3G

Onsemi

NTMFS5C450NLT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for power applications in small outline packages, operating from -55 to 175 °C.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

110 A

110 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

740 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS5C450NT1G by Onsemi

NTMFS5C450NT1G

Onsemi

NTMFS5C450NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 102A ID, and 0.0033 ohm RDS(on). It's used in power applications due to its 800A IDM, 215mJ EAS rating, and -55 to 175°C operating temperature range.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

102 A

102 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

800 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS5C450NT3G by Onsemi

NTMFS5C450NT3G

Onsemi

NTMFS5C450NT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 800A IDM, and 0.0033 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

102 A

102 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

800 A

YES

TIN

FLAT

DUAL

30

SILICON

DMJ70H900HJ3 by Diodes Incorporated

DMJ70H900HJ3

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; No. of Elements: 1; Terminal Finish: MATTE TIN;

50 mJ

SINGLE WITH BUILT-IN DIODE

700 V

7 A

7 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

68 W

10 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTTFS6H854NTAG by Onsemi

NTTFS6H854NTAG

Onsemi

NTTFS6H854NTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 175A IDM, and 0.0231 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.

205 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

9.5 A

9.5 A

.0231 ohm

METAL-OXIDE SEMICONDUCTOR

5.4 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

68 W

175 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

DMNH6065SPDW-13 by Diodes Incorporated

DMNH6065SPDW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; JESD-30 Code: R-PDSO-F8; Transistor Element Material: SILICON;

89 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

27 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

9.9 pF

R-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.4 W

68 W

108 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

NVTYS003N04CTWG by Onsemi

NVTYS003N04CTWG

Onsemi

NVTYS003N04CTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0031 ohm RDS(ON). It's an N-CHANNEL transistor in PLASTIC/EPOXY package for applications requiring high power dissipation and low on-resistance. Ideal for automotive electronics due to AEC-Q101 compliance and 175 °C operating temperature.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

107 A

107 A

.0031 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

R-PDSO-X5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

740 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

UNSPECIFIED

DUAL

30

SILICON

DMTH47M2LPSW-13 by Diodes Incorporated

DMTH47M2LPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

24.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

73 A

.0073 ohm

METAL-OXIDE SEMICONDUCTOR

14.8 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

68 W

292 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON