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450 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW62NM60N by STMicroelectronics

STW62NM60N

STMicroelectronics

STW62NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 220A IDM, 65A ID, and 0.048 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.

SINGLE WITH BUILT-IN DIODE

600 V

65 A

55 A

.048 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

450 W

220 A

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW78N65M5 by STMicroelectronics

STW78N65M5

STMicroelectronics

STW78N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 276A pulsed drain current, 2000mJ avalanche energy rating, and 0.032ohm max on resistance. The transistor operates in enhancement mode with a max power dissipation of 450W at 150°C, making it suitable for high-power applications.

2000 mJ

SINGLE WITH BUILT-IN DIODE

650 V

69 A

69 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

450 W

276 A

AEC-Q101

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STY34NB50 by STMicroelectronics

STY34NB50

STMicroelectronics

STY34NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 136A Max Pulsed Drain Current, 0.13 ohm Max RDS(on), and 1000mJ Avalanche Energy Rating. Suitable for high-power circuits requiring efficient switching capabilities.

AVALANCHE RATED

1000 mJ

SINGLE WITH BUILT-IN DIODE

500 V

34 A

34 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

450 W

136 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STE26NA90 by STMicroelectronics

STE26NA90

STMicroelectronics

STE26NA90 by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 26A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 104A Pulsed Drain Current, and operates in ENHANCEMENT MODE.

3000 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

900 V

26 A

26 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

450 W

104 A

Not Qualified

UL RECOGNIZED

FET General Purpose Power

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON

STE48NM50 by STMicroelectronics

STE48NM50

STMicroelectronics

STE48NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 192A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 450W Pdiss, EAS of 810mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.

810 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

48 A

48 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

450 W

192 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

STY100NS20FD by STMicroelectronics

STY100NS20FD

STMicroelectronics

STY100NS20FD by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 400A IDM, and 0.024 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.

750 mJ

SINGLE WITH BUILT-IN DIODE

200 V

100 A

100 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

450 W

400 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STY140NS10 by STMicroelectronics

STY140NS10

STMicroelectronics

STY140NS10 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 140 A and a breakdown voltage of 100 V. It operates in enhancement mode with a power dissipation of up to 450 W. This robust transistor ensures reliable performance in demanding environments, with an operating temp range of -55 °C to 175 °C.

2900 mJ

SINGLE WITH BUILT-IN DIODE

100 V

140 A

140 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

450 W

560 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STY112N65M5 by STMicroelectronics

STY112N65M5

STMicroelectronics

STY112N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 93A max drain current, and 450W power dissipation. Ideal for high-efficiency power management in various electronic devices.

AVALANCHE ENERGY RATED

SINGLE WITH BUILT-IN DIODE

650 V

93 A

93 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

450 W

372 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STY60NK30Z by STMicroelectronics

STY60NK30Z

STMicroelectronics

STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.

700 mJ

SINGLE WITH BUILT-IN DIODE

300 V

60 A

60 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

450 W

240 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE48NM60 by STMicroelectronics

STE48NM60

STMicroelectronics

STE48NM60 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and max drain current of 48A. It supports high power dissipation up to 450W and operates at a max temp of 150 °C. Perfect for efficient power management in various electronic devices.

850 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

30 A

48 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

450 W

192 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON

STY30NK90Z by STMicroelectronics

STY30NK90Z

STMicroelectronics

STY30NK90Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 900V breakdown voltage and 26A max drain current. It offers a built-in diode and operates in enhancement mode with a power dissipation of 450W. This robust transistor is suitable for high-temperature environments up to 150 °C.

500 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

900 V

26 A

26 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

450 W

104 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STY130NF20D by STMicroelectronics

STY130NF20D

STMicroelectronics

STY130NF20D from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 130 A, breakdown voltage of 200 V, and power dissipation up to 450 W. Ideal for high-performance power management in various electronic devices.

800 mJ

SINGLE WITH BUILT-IN DIODE

200 V

130 A

130 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

450 W

520 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON