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39 W Power Field Effect Transistors (FET) 15

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS5826NLT1G by Onsemi

NVMFS5826NLT1G

Onsemi

NVMFS5826NLT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 130A IDM, and 0.032 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package suitable for power management applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W at 175 °C.

20 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

26 A

26 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

39 W

130 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVMFS5826NLT3G by Onsemi

NVMFS5826NLT3G

Onsemi

NVMFS5826NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 26A Max ID, and 0.032 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications. With 130A IDM and 39W Pd, it operates in Enhancement Mode at up to 175 °C.

20 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

26 A

26 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

39 W

130 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NDF11N50ZH by Onsemi

NDF11N50ZH

Onsemi

NDF11N50ZH by Onsemi is a Power FET with 500V DS Breakdown Voltage, 44A IDM, and 0.52 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.

420 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

12 A

12 A

.52 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

39 W

44 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

NDD02N40-1G by Onsemi

NDD02N40-1G

Onsemi

NDD02N40-1G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in circuits where N-channel MOSFETs with built-in diode are needed.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

400 V

1.7 A

1.7 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

39 W

6.9 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

30

SILICON

NDD02N40T4G by Onsemi

NDD02N40T4G

Onsemi

NDD02N40T4G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for power applications requiring high drain current handling capabilities.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

400 V

1.7 A

1.7 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

39 W

6.9 A

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

NVMFS5826NLWFT1G by Onsemi

NVMFS5826NLWFT1G

Onsemi

NVMFS5826NLWFT1G by Onsemi is a N-CHANNEL FET with 26A max drain current and 39W power dissipation. Ideal for power management applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration and matte tin finish, it offers efficient performance in various electronic devices.

SINGLE

26 A

26 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

39 W

FET General Purpose Power

YES

MATTE TIN

30

NVMFS5826NLWFT3G by Onsemi

NVMFS5826NLWFT3G

Onsemi

NVMFS5826NLWFT3G by Onsemi is a single N-channel Power FET with 26A max drain current and 39W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 175 °C makes it suitable for demanding environments.

SINGLE

26 A

26 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

39 W

FET General Purpose Power

YES

TIN

30

NDF11N50ZG by Onsemi

NDF11N50ZG

Onsemi

NDF11N50ZG by Onsemi is a Power FET with 500V DS Breakdown Voltage, 42A IDM, and 0.52 ohm RDS. Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.

420 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

12 A

6.7 A

.52 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

39 W

42 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

NDF10N60ZG by Onsemi

NDF10N60ZG

Onsemi

NDF10N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 40A IDM, and 0.75 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C temperature.

300 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

10 A

6 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

39 W

40 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

FCPF190N60E-F152 by Onsemi

FCPF190N60E-F152

Onsemi

FCPF190N60E-F152 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features 61.8A Max Pulsed Drain Current and 400mJ Avalanche Energy Rating, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W and operates b/w -55 to 150 °C temperature range.

400 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

20.6 A

20.6 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

165 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

39 W

61.8 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

252 ns

94 ns

FCPF190N60E-F154 by Onsemi

FCPF190N60E-F154

Onsemi

FCPF190N60E-F154 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 61.8A IDM and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W and can handle up to 150°C operating temperature.

400 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

20.6 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

165 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

39 W

61.8 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

252 ns

94 ns

FCPF190N60-F154 by Onsemi

FCPF190N60-F154

Onsemi

FCPF190N60-F154 by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60.6A IDM, 400mJ EAS, and 0.199 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and -55°C min temp.

400 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

20.2 A

.199 ohm

METAL-OXIDE SEMICONDUCTOR

128 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

39 W

60.6 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

158 ns

80 ns

CSD17507Q5AT by Texas Instruments

CSD17507Q5AT

Texas Instruments

CSD17507Q5AT by Texas Instruments is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 163A IDM, 45mJ EAS, and 0.0161 ohm RDS(ON), operating in -55 to 150 °C temperature range. Suitable for surface mount design with DUAL terminal position and DRAIN case connection.

AVALANCHE RATED

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

65 A

65 A

.0161 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

39 W

163 A

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMTH10H009LFG-7 by Diodes Incorporated

DMTH10H009LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 39 W; Maximum Drain-Source On Resistance: .0085 ohm; Package Shape: SQUARE;

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

14 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

39 W

220 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMTH10H009LFG-13 by Diodes Incorporated

DMTH10H009LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 39 W; Case Connection: DRAIN; Terminal Form: NO LEAD;

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

14 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

39 W

220 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON