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28 W Power Field Effect Transistors (FET) 14

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSF030NE2LQXUMA1 by Infineon Technologies

BSF030NE2LQXUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; No. of Terminals: 2; JESD-30 Code: R-MBCC-N2;

50 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

75 A

.0041 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N2

e4

3

1

2

ENHANCEMENT MODE

150 Cel

-40 Cel

METAL

RECTANGULAR

CHIP CARRIER

N-CHANNEL

28 W

300 A

Not Qualified

YES

SILVER NICKEL

NO LEAD

BOTTOM

SWITCHING

SILICON

IPS65R1K4C6AKMA1 by Infineon Technologies

IPS65R1K4C6AKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Package Style (Meter): IN-LINE; Package Body Material: PLASTIC/EPOXY;

26 mJ

SINGLE WITH BUILT-IN DIODE

650 V

3.2 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

28 W

8.3 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSF045N03MQ3G by Infineon Technologies

BSF045N03MQ3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

63 A

18 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N2

1

2

ENHANCEMENT MODE

150 Cel

METAL

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

28 W

252 A

Not Qualified

FET General Purpose Power

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

STF20NF06L by STMicroelectronics

STF20NF06L

STMicroelectronics

STF20NF06L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.

120 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

28 W

80 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF20NF06 by STMicroelectronics

STF20NF06

STMicroelectronics

STF20NF06 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Its compact design ensures efficient performance in various electronic circuits.

120 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

28 W

80 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS5C468NLWFT1G by Onsemi

NVMFS5C468NLWFT1G

Onsemi

NVMFS5C468NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 190A IDM, and 0.0176 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

37 A

37 A

.0176 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

190 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C468NLWFT3G by Onsemi

NVMFS5C468NLWFT3G

Onsemi

NVMFS5C468NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 190A IDM, and 0.0176 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

37 A

37 A

.0176 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

190 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C682NLT1G by Onsemi

NVMFS5C682NLT1G

Onsemi

NVMFS5C682NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS breakdown voltage, and 130A pulsed drain current. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C max operating temperature.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

25 A

25 A

.0315 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

130 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C682NLT3G by Onsemi

NVMFS5C682NLT3G

Onsemi

NVMFS5C682NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 130A IDM, and 0.0315 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

25 A

25 A

.0315 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

130 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C682NLWFT1G by Onsemi

NVMFS5C682NLWFT1G

Onsemi

NVMFS5C682NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 130A IDM, and 0.0315 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

25 A

25 A

.0315 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

130 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C682NLWFT3G by Onsemi

NVMFS5C682NLWFT3G

Onsemi

NVMFS5C682NLWFT3G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 130A pulsed drain current, and 0.0315 ohm max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

25 A

25 A

.0315 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

130 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C682NLAFT1G by Onsemi

NVMFS5C682NLAFT1G

Onsemi

NVMFS5C682NLAFT1G by Onsemi is a power FET with N-channel configuration and a min DS breakdown voltage of 60V. It has a max pulsed drain current of 130A and an avalanche energy rating of 43mJ. This transistor is suitable for applications requiring high power dissipation and temperature resistance, such as automotive electronics or industrial equipment.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

25 A

25 A

.0315 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28 W

130 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

IPA65R650CEXKSA1 by Infineon Technologies

IPA65R650CEXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Minimum DS Breakdown Voltage: 650 V; Maximum Drain-Source On Resistance: .65 ohm;

142 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

10.1 A

.65 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

28 W

18 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCPF600N60ZL1 by Onsemi

FCPF600N60ZL1

Onsemi

FCPF600N60ZL1 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 22.2A IDM, 135mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and turn on/off times of 60ns/116ns.

135 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

7.4 A

7.4 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

28 W

22.2 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

116 ns

60 ns