Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK7619-100B,118
NXP Semiconductors
BUK7619-100B,118 from NXP is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 64 A and power dissipation of 200 W, operating up to 175 °C. Perfect for efficient switching in power management systems.
SINGLE
64 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
175 Cel
245
N-CHANNEL
200 W
FET General Purpose Power
YES
TIN
30
STP140N8F7
STMicroelectronics
STMicroelectronics' STP140N8F7 is a N-CHANNEL Power FET with 90A max drain current and 200W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
90 A
NOT SPECIFIED
NO
IRF3205STRR
International Rectifier
IRF3205STRR is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 200W and can withstand temperatures up to 175°C.
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
264 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
55 V
110 A
75 A
.008 ohm
211 pF
TO-263AB
R-PSSO-G2
e0
2
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
225
390 A
Not Qualified
Tin/Lead (Sn/Pb)
GULL WING
SWITCHING
SILICON
115 ns
NVMFS5C404NLT1G
Onsemi
NVMFS5C404NLT1G by Onsemi is a N-CHANNEL FET with 352A max drain current and 200W power dissipation. Ideal for high-power applications, it operates at up to 175°C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration.
352 A
260
MATTE TIN
NVMFS5C404NLT3G
NVMFS5C404NLT3G by Onsemi is a single N-channel Power FET with 352A max drain current and 200W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, making it ideal for high-power applications in automotive and industrial sectors.
NVMFS5C604NLT3G
NVMFS5C604NLT3G by Onsemi is a N-CHANNEL FET with 287A ID, 200W power dissipation, and 175 °C max operating temp. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
287 A
Matte Tin (Sn) - annealed
NVMFS5C604NLWFT3G
NVMFS5C604NLWFT3G by Onsemi is a N-CHANNEL FET with 287A max drain current and 200W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in demanding environments.
STW11NK90Z
STW11NK90Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 900V breakdown voltage, 36.8A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
HIGH VOLTAGE
400 mJ
900 V
9.2 A
.98 ohm
TO-247AC
R-PSFM-T3
3
150 Cel
FLANGE MOUNT
36.8 A
THROUGH-HOLE
PHB110NQ06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
280 mJ
.0093 ohm
240 A
IPI100P03P3L-04
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (Abs) (ID): 100 A; Terminal Finish: MATTE TIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
450 mJ
30 V
100 A
.0043 ohm
TO-262AA
R-PSIP-T3
IN-LINE
P-CHANNEL
400 A
Other Transistors
IPP100P03P3L-04
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSFM-T3;
TO-220AB
BUK9508-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
670 mJ
.0085 ohm
503 A
BUK9610-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Avalanche Energy Rating (EAS): 333 mJ; Peak Reflow Temperature (C): 245;
333 mJ
.075 A
.011 ohm
Tin (Sn)
PHP110NQ06LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 75 A; JEDEC-95 Code: TO-220AB;
PHP112N06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; No. of Terminals: 3; Qualification: Not Qualified;
360 mJ
PHP119NQ06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0071 ohm
PHP129NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
475 mJ
40 V
PHP143NQ04T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
.0052 ohm
NP88N03KDG-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 88 A;
88 A
NP88N04KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
NP88N055KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NP88N055KUG-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 88 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NVMFS5C404NT3G
NVMFS5C404NT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Enhances performance in power management systems with its high current handling capabilities.
907 mJ
378 A
.0007 ohm
120 pF
R-PDSO-F5
5
900 A
AEC-Q101
FLAT
DUAL
NVMFS5C404NWFT1G
NVMFS5C404NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C404NWFT3G
NVMFS5C404NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). It is an N-CHANNEL MOSFET ideal for automotive applications due to its AEC-Q101 standard compliance and high power dissipation of 200W.
CSD18542KCS
Texas Instruments
CSD18542KCS by Texas Instruments is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for high-power applications, it features a max power dissipation of 200W, operating temperature range of -55 to 175°C, and avalanche energy rating of 281mJ.
281 mJ
60 V
170 A
14 pF
1.8
NTMFS5C404NLTT1G
NTMFS5C404NLTT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.001 ohm RDS(on). It is used in power applications due to its 200W Pdiss, -55 to 175 °C operating temp range, and DUAL terminal position.
370 A
.001 ohm
NTMFS5C404NLTT3G
NTMFS5C404NLTT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.001 ohm RDS(ON). It is used in power applications due to its 200W Pdiss, -55 to 175 °C operating temp range, and EAS of 907mJ.
NTMFS5C404NLTWFT1G
NTMFS5C404NLTWFT1G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.001 ohm RDS(on). Ideal for power management applications requiring high current handling capabilities in compact designs.
79.8 pF
NTMFS5C404NT3G
NTMFS5C404NT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment due to its low on-resistance of 0.0007 ohm. Operating in enhancement mode, it offers a max operating temperature of 175 °C.
NVMFS5A140PLZT1G
NVMFS5A140PLZT1G by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 140A Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems, it features a built-in diode and operates in enhancement mode. With a compact rectangular package and matte tin finish, it ensures efficient performance in harsh environments.
420 mJ
140 A
7.2 ohm
3.8 W
560 A
NVMFS5A140PLZT3G
NVMFS5A140PLZT3G by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 140A Drain Current. Ideal for applications requiring high power dissipation up to 200W, such as automotive electronics due to AEC-Q101 standard compliance. Features include 560A Pulsed Drain Current and 7.2ohm On Resistance for efficient performance in enhancement mode operation.
NVMFS5A140PLZWFT1G
NVMFS5A140PLZWFT1G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, 560A IDM, and 420mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 compliance and high drain current capacity.
NVMFS5A140PLZWFT3G
NVMFS5A140PLZWFT3G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage and 560A IDM. Ideal for power applications, it features a built-in diode, 140A ID, and 7.2 ohm RDS(on). Suitable for automotive use with AEC-Q101 standard compliance.
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