Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO4822A
Alpha & Omega Semiconductor
AO4822A by Alpha & Omega Semiconductor is an N-CHANNEL FET with 8A ID and 2W power dissipation. Ideal for applications requiring high drain current and operating at up to 150°C, such as power management systems in various electronic devices.
8 A
METAL-OXIDE SEMICONDUCTOR
ENHANCEMENT MODE
150 Cel
N-CHANNEL
2 W
FET General Purpose Power
YES
AO4822AL
AO4822AL by Alpha & Omega Semiconductor is an N-CHANNEL FET with 8.5A max drain current and 2W power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150°C, making it suitable for various power management systems.
8.5 A
AO4614BL
AO4614BL by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements w/ diode. It has 40V DS breakdown voltage, 40A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
6 A
.03 ohm
43 pF
R-PDSO-G8
2
8
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL AND P-CHANNEL
40 A
GULL WING
DUAL
SWITCHING
SILICON
SP8K5FU6TB
ROHM
ROHM SP8K5FU6TB is an N-CHANNEL FET with 3.5A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency in a compact design, such as power management systems or motor control circuits. Operating at up to 150°C, it offers reliable performance in demanding environments.
3.5 A
1
260
10
SP8K2FU6TB
ROHM SP8K2FU6TB is an N-CHANNEL FET with 6A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150°C. Suitable for surface mount designs, it features metal-oxide semiconductor technology.
SSM6K411TU(TE85L,F)
Toshiba
Toshiba's SSM6K411TU(TE85L,F) is a N-CHANNEL FET with 10A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies or motor control systems.
SINGLE
10 A
PMV90EN,215
NXP Semiconductors
PMV90EN,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 2.1 A and operates at temperatures up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into modern circuits.
2.1 A
e3
TIN
30
EFC6602R-A-TR
Onsemi
EFC6602R-A-TR by Onsemi is an N-channel Power FET with 18A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150 °C. With surface mount capability, it suits various electronic designs needing reliable performance.
18 A
VQ1001P-E3
Vishay Intertechnology
Vishay Intertechnology's VQ1001P-E3 is an N-CHANNEL Power FET with 0.83A max drain current and 2W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in power management systems or voltage regulation circuits. Operating up to 150°C, it utilizes metal-oxide semiconductor technology for efficient performance.
.83 A
FET General Purpose Powers
NO
IRF7350TRPBF
International Rectifier
IRF7350TRPBF by International Rectifier is a power FET with N-Channel and P-Channel polarity. It has a min DS breakdown voltage of 100V and can handle a max pulsed drain current of 8.4A. This transistor is commonly used for switching applications.
HIGH RELIABILITY
35 mJ
100 V
.21 ohm
MS-012AA
8.4 A
Other Transistors
Matte Tin (Sn)
NVMD6N04R2G
NVMD6N04R2G by Onsemi is a N-CHANNEL FET with 5.8A max drain current and 2W max power dissipation. Ideal for power applications, it operates up to 150 °C with matte tin finish, making it suitable for various surface mount designs.
5.8 A
MATTE TIN
DMP2035UVT-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .045 ohm; Package Shape: RECTANGULAR;
SINGLE WITH BUILT-IN DIODE
20 V
5.2 A
.045 ohm
R-PDSO-G6
6
P-CHANNEL
24 A
AEC-Q101
DMG4406LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL;
30 V
10.3 A
9.3 A
.011 ohm
90 A
RSS050P03FU6TB
ROHM's RSS050P03FU6TB is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, such as power management systems. Operating up to 150°C, it offers reliability in various industrial settings.
5 A
NDT02N40T1G
Onsemi's NDT02N40T1G is a Power FET with 400V DS Breakdown Voltage, 1.6A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for power management applications requiring high efficiency and low power dissipation.
120 mJ
DRAIN
400 V
.4 A
.0055 ohm
TO-261AA
R-PDSO-G4
4
1.6 A
2SJ199-T2-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Maximum Drain Current (ID): 1 A;
1 A
NOT SPECIFIED
UPA1809GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
e6
TIN BISMUTH
UPA1873GR-9JG-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 6 A;
UPA1930TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
4.5 A
UPA2752GR-E1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 8 A;
UPA2794GR(0)-E1-AZ
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 5.5 A; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
5.5 A
DMP2066LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
.04 ohm
20 A
Not Qualified
ZXMN4A06GQTA
ZXMN4A06GQTA by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 22A max pulsed drain current, and 0.05 ohm max drain-source resistance. Suitable for enhancement mode operation in automotive (AEC-Q101) and military (MIL-STD-202) environments.
.05 ohm
60 pF
22 A
AEC-Q101; MIL-STD-202
STS3DNE60L
STMicroelectronics
STS3DNE60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 12A IDM and 0.1 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power circuits.
LOW THRESHOLD
60 V
3 A
.1 ohm
e4
12 A
NICKEL PALLADIUM GOLD
IRF7901D1
IRF7901D1 by International Rectifier is an N-CHANNEL FET for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 24A, and max operating temperature of 150°C. With a package style of small outline and surface mount capability, it offers efficient power management in various electronic devices.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
6.2 A
.038 ohm
e0
TIN LEAD
IRF7901D1TR
IRF7901D1TR by International Rectifier is an N-CHANNEL FET with 2 SERIES CONNECTED elements and a built-in diode. It operates in ENHANCEMENT MODE for SWITCHING applications, with a Max Pulsed Drain Current of 24A. This PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C operating temperature.
BSO215C
Infineon Technologies
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G8;
LOGIC LEVEL
26 mJ
3.7 A
14.8 A
BSO612CV
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 3 A; JESD-30 Code: R-PDSO-G8;
AVALANCHE RATED
47 mJ
.12 ohm
235
STS5DNF20V
STS5DNF20V by STMicroelectronics is an N-CHANNEL FET with 20V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a dual-element configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE.
Nickel/Palladium/Gold (Ni/Pd/Au)
STS9D8NH3LL
STS9D8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9A, a breakdown voltage of 30V, and operates at up to 150 °C. Ideal for compact power management in electronics.
150 mJ
9 A
.025 ohm
32 A
40
STS4DNF60
STS4DNF60 by STMicroelectronics is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, capable of handling 16A Pulsed Drain Current and 4A Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W at 150°C.
4 A
.09 ohm
16 A
NTMD6N04R2G
NTMD6N04R2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 29A IDM. Ideal for SWITCHING applications, it features a 245mJ EAS rating and 0.034 ohm Drain-Source Resistance. With GULL WING terminals in an 8-terminal package, it operates in ENHANCEMENT MODE up to 150 °C.
245 mJ
4.6 A
.034 ohm
29 A
Tin (Sn)
SI3445DV-T1-GE3
SI3445DV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 20A IDM, and 0.042 ohm RDS(ON). Ideal for power management applications due to its small outline package, 150°C max temp, and 2W power dissipation capability.
8 V
5.6 A
.042 ohm
PURE MATTE TIN
DMC3035LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (Abs) (ID): 6.9 A;
6.9 A
.035 ohm
30 A
PHN210,118
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 3.4 A;
3.4 A
UPA1727G-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Terminal Finish: TIN BISMUTH;
UPA1763G-E1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 4.5 A;
UPA1763G-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
UPA1763G-E2-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e6; Maximum Drain Current (ID): 4.5 A; Maximum Drain Current (Abs) (ID): 4.5 A;
UPA1764G-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
7 A
UPA1764G-E2-AZ
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
UPA1803GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
UPA1890GR-9JG-E1-A
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
DMN2009LSS-13
DMN2009LSS-13 by Diodes Inc. is a power FET with N-channel polarity and a built-in diode. It is used for switching applications, has a min DS breakdown voltage of 20V, and can handle a max pulsed drain current of 42A.
.008 ohm
42 A
FDS8949_F085
Fairchild Semiconductor
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
.029 ohm
BSO4804
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
90 mJ
.02 ohm
3
STS2DPFS20V
STS2DPFS20V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 2.5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO8 package ensures easy surface mounting in various electronic devices.
SO-8
2 A
2.5 A
.25 ohm
STS4DPF20L
STS4DPF20L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
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