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1.6 W Power Field Effect Transistors (FET) 31

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FDC2512-F095 by Fairchild Semiconductor

FDC2512-F095

Fairchild Semiconductor

FDC2512-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.4A max drain current and 1.6W max power dissipation in SINGLE configuration. It operates in ENHANCEMENT MODE, suitable for applications requiring up to 150°C operating temperature like power management systems.

SINGLE

1.4 A

1.4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.6 W

FET General Purpose Power

YES

FDC3512-F095 by Fairchild Semiconductor

FDC3512-F095

Fairchild Semiconductor

FDC3512-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 3A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for power management in various electronic devices.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.6 W

FET General Purpose Power

YES

FDC3612-F095 by Fairchild Semiconductor

FDC3612-F095

Fairchild Semiconductor

FDC3612-F095 by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 2.6A and max power dissipation of 1.6W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.

SINGLE

2.6 A

2.6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.6 W

FET General Purpose Power

YES

FDC5612-F095 by Fairchild Semiconductor

FDC5612-F095

Fairchild Semiconductor

FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.

SINGLE

4.3 A

4.3 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.6 W

FET General Purpose Power

YES

FDC655BN-NBNN007 by Fairchild Semiconductor

FDC655BN-NBNN007

Fairchild Semiconductor

FDC655BN-NBNN007 by Fairchild Semiconductor is a N-CHANNEL Power FET with 6.3A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for applications requiring high efficiency and compact design, such as power supplies and motor control systems operating up to 150°C.

SINGLE

6.3 A

6.3 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

1.6 W

FET General Purpose Power

YES

MATTE TIN

30

FDS8984-F40 by Fairchild Semiconductor

FDS8984-F40

Fairchild Semiconductor

FDS8984-F40 by Fairchild Semiconductor is an N-CHANNEL Power FET with 7A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power supplies and motor control systems. Operating at up to 150°C, it offers enhanced performance in demanding environments.

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

1.6 W

FET General Purpose Power

YES

MATTE TIN

30

CPH6444-TL-E by Onsemi

CPH6444-TL-E

Onsemi

CPH6444-TL-E by Onsemi is a N-CHANNEL FET with 4.5A ID and 1.6W power dissipation. Ideal for applications requiring high drain current capabilities, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount configuration for easy installation.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.6 W

FET General Purpose Power

YES

Tin/Bismuth (Sn/Bi)

CPH6445-TL-W by Onsemi

CPH6445-TL-W

Onsemi

CPH6445-TL-W by Onsemi is a N-CHANNEL FET with 3.5A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems or motor control circuits.

SINGLE

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

1.6 W

FET General Purpose Power

YES

TIN BISMUTH

30

DMP3065LVT-13 by Diodes Incorporated

DMP3065LVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .042 ohm; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

130 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

75 ns

32 ns

DMP3065LVT-7 by Diodes Incorporated

DMP3065LVT-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Reference Standard: MIL-STD-202; Maximum Operating Temperature: 150 Cel;

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

130 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

75 ns

32 ns

STT3PF30L by STMicroelectronics

STT3PF30L

STMicroelectronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

LOW THRESHOLD

SINGLE WITH BUILT-IN DIODE

30 V

2.4 A

2.4 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

10 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDC2612_F095 by Fairchild Semiconductor

FDC2612_F095

Fairchild Semiconductor

FDC2612_F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.1A ID and 1.6W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for low-power electronic devices requiring efficient power management.

SINGLE

1.1 A

1.1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.6 W

FET General Purpose Power

YES

FDS8984_F085 by Fairchild Semiconductor

FDS8984_F085

Fairchild Semiconductor

FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.

32 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

7 A

7 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

30 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

STC5NF20V by STMicroelectronics

STC5NF20V

STMicroelectronics

STC5NF20V by STMicroelectronics is a versatile N-channel MOSFET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

LOW THRESHOLD

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

5 A

5 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.6 W

20 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STT2PF60L by STMicroelectronics

STT2PF60L

STMicroelectronics

STT2PF60L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a 60V breakdown voltage, 2A max drain current, and operates at up to 150 °C. Its compact SO-6 package ensures easy surface mounting in various electronic devices.

LOW THRESHOLD

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

8 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STT3PF20V by STMicroelectronics

STT3PF20V

STMicroelectronics

STT3PF20V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 2.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

LOW THRESHOLD

SINGLE WITH BUILT-IN DIODE

20 V

2.2 A

2.2 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

8.8 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDS4141_F085 by Fairchild Semiconductor

FDS4141_F085

Fairchild Semiconductor

FDS4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.013 ohm Drain-Source On Resistance and can handle up to 1.6W power dissipation at 150°C.

229 mJ

SINGLE WITH BUILT-IN DIODE

40 V

10.8 A

10.8 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

36 A

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2040UVT-13 by Diodes Incorporated

DMN2040UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 1; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE

20 V

6.7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

83 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

40 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2075UVT-13 by Diodes Incorporated

DMP2075UVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

20 V

3.8 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

87 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

25 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3016LDN-13 by Diodes Incorporated

DMN3016LDN-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Form: NO LEAD; Maximum Pulsed Drain Current (IDM): 45 A;

24 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

7.3 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

82 pF

S-PDSO-N8

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.6 W

45 A

YES

NO LEAD

DUAL

SWITCHING

SILICON

CPH6347-TL-W by Onsemi

CPH6347-TL-W

Onsemi

CPH6347-TL-W by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 24A IDM, and 0.039 ohm RDS. It's ideal for power management applications due to its small outline package, 150°C max operating temp, and built-in diode configuration.

ESD PROTECTED

SINGLE WITH BUILT-IN DIODE

20 V

6 A

6 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e6

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

24 A

YES

TIN BISMUTH

GULL WING

DUAL

30

SILICON

CPH6442-TL-W by Onsemi

CPH6442-TL-W

Onsemi

CPH6442-TL-W by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 24A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 150 °C.

ESD PROTECTED

SINGLE WITH BUILT-IN DIODE

60 V

6 A

6 A

.043 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e6

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

24 A

YES

TIN BISMUTH

GULL WING

DUAL

30

SILICON

CPH6443-TL-W by Onsemi

CPH6443-TL-W

Onsemi

CPH6443-TL-W by Onsemi is a N-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM and 6A ID, with 0.037 ohm RDS(ON) for efficient operation. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various power management tasks.

ESD PROTECTED

SINGLE WITH BUILT-IN DIODE

35 V

6 A

6 A

.037 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e6

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

24 A

YES

TIN BISMUTH

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2028UVT-13 by Diodes Incorporated

DMN2028UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;

SINGLE WITH BUILT-IN DIODE

20 V

6.2 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

78 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

40 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN5040LSS-13 by Diodes Incorporated

DMN5040LSS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

8 mJ

SINGLE WITH BUILT-IN DIODE

50 V

5.2 A

5.2 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-50 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

25 A

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMP2075UVT-7 by Diodes Incorporated

DMP2075UVT-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Maximum Feedback Capacitance (Crss): 87 pF;

SINGLE WITH BUILT-IN DIODE

20 V

3.8 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

87 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

25 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2024UVT-13 by Diodes Incorporated

DMN2024UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .024 ohm; Transistor Application: SWITCHING;

COMMON DRAIN, 2 ELEMENTS

20 V

7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

35 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2024UVT-7 by Diodes Incorporated

DMN2024UVT-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

COMMON DRAIN, 2 ELEMENTS

20 V

7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

35 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMP2067LVT-13 by Diodes Incorporated

DMP2067LVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;

SINGLE WITH BUILT-IN DIODE

20 V

4.2 A

4.2 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.6 W

30 A

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2024UVTQ-13 by Diodes Incorporated

DMN2024UVTQ-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Terminals: 6; Maximum Operating Temperature: 150 Cel;

COMMON DRAIN, 2 ELEMENTS

20 V

7 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

35 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP3045LVT-13 by Diodes Incorporated

DMP3045LVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G6;

30 mJ

SINGLE WITH BUILT-IN DIODE

30 V

5.4 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

79 pF

R-PDSO-G6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON