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COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 25

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN2028UFDH-7 by Diodes Incorporated

DMN2028UFDH-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 6.8 A;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.8 A

6.8 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.5 W

40 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

BTS7904BATMA1 by Infineon Technologies

BTS7904BATMA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0202 ohm; Transistor Element Material: SILICON; Terminal Position: SINGLE;

200 mJ

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

55 V

40 A

.0202 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263

R-PSSO-G5

2

5

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

160 A

YES

GULL WING

SINGLE

SILICON

BTS7904SAKSA1 by Infineon Technologies

BTS7904SAKSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 200 mJ; No. of Terminals: 5; Operating Mode: ENHANCEMENT MODE;

200 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

55 V

40 A

.0205 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T5

2

5

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL AND P-CHANNEL

160 A

NO

THROUGH-HOLE

SINGLE

SILICON

BUK221-50DY,118 by NXP Semiconductors

BUK221-50DY,118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

60 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

45 V

4 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G6

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

SWITCHING

SILICON

STC5NF20V by STMicroelectronics

STC5NF20V

STMicroelectronics

STC5NF20V by STMicroelectronics is a versatile N-channel MOSFET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

LOW THRESHOLD

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

5 A

5 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.6 W

20 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STC6NF30V by STMicroelectronics

STC6NF30V

STMicroelectronics

STC6NF30V by STMicroelectronics is a versatile N-channel FET designed for switching applications. It features a max drain current of 6 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.

LOW THRESHOLD

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

6 A

6 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.25 W

24 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

NTQD6968NR2G by Onsemi

NTQD6968NR2G

Onsemi

NTQD6968NR2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 18A IDM, and 0.03 ohm RDS(on). Commonly used for SWITCHING applications due to its COMMON DRAIN configuration. It comes in a small outline package with GULL WING terminals.

LOGIC LEVEL COMPATIBLE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

7 A

6.2 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

18 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTQD6968N by Onsemi

NTQD6968N

Onsemi

NTQD6968N by Onsemi is an N-CHANNEL FET with 20V DS breakdown voltage and 6.2A max drain current. Commonly used for switching applications, it features a common drain configuration, 2 elements with built-in diode, and operates in enhancement mode. The transistor has a 0.03 ohm max on resistance and can handle up to 18A pulsed drain current.

LOGIC LEVEL COMPATIBLE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.2 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e0

1

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

18 A

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DMN2041UVT-13 by Diodes Incorporated

DMN2041UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.44 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

5.8 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

79 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.44 W

36 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

ITD50N04S4L04ATMA1 by Infineon Technologies

ITD50N04S4L04ATMA1

Infineon Technologies

Infineon ITD50N04S4L04ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 50A ID, and 0.004 ohm RDS(on). Commonly used in automotive applications due to AEC-Q101 standard compliance.

210 mJ

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

50 A

.004 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G4

2

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

200 A

AEC-Q101

YES

GULL WING

SINGLE

SILICON

CSD87501LT by Texas Instruments

CSD87501LT

Texas Instruments

CSD87501LT by Texas Instruments is a N-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features COMMON DRAIN configuration, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology. With a max operating temperature of 150°C, it offers reliable performance in various electronic systems.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

METAL-OXIDE SEMICONDUCTOR

198 pF

R-PBGA-B10

e4

1

2

10

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

N-CHANNEL

YES

NICKEL GOLD

BUTT

BOTTOM

30

SWITCHING

SILICON

DMN2022UNS-13 by Diodes Incorporated

DMN2022UNS-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel;

14.7 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

10.7 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.9 W

60 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMC3016LNS-13 by Diodes Incorporated

DMC3016LNS-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; No. of Terminals: 8;

24 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

9 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

107 pF

S-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

2 W

55 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMC3025LNS-13 by Diodes Incorporated

DMC3025LNS-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Feedback Capacitance (Crss): 57 pF; JESD-609 Code: e3;

9.8 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

7.2 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

57 pF

S-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.8 W

45 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

CSD87313DMST by Texas Instruments

CSD87313DMST

Texas Instruments

CSD87313DMST by Texas Instruments is an N-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features COMMON DRAIN configuration, 2 ELEMENTS with BUILT-IN DIODE, and operates in ENHANCEMENT MODE. With a max operating temperature of 150°C and small outline package style, it offers reliable performance in various electronic devices.

AVALANCHE RATED

67 mJ

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

METAL-OXIDE SEMICONDUCTOR

200 pF

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN1002UCA6-7 by Diodes Incorporated

DMN1002UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.47 W; Maximum Feedback Capacitance (Crss): 297 pF; Package Style (Meter): CHIP CARRIER;

ESD PROTECTED

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

METAL-OXIDE SEMICONDUCTOR

297 pF

R-XBCC-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.47 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

10255 ns

4787 ns

DMN2024UDH-7 by Diodes Incorporated

DMN2024UDH-7

Diodes Incorporated

DMN2024UDH-7 by Diodes Inc. is an N-channel FET with 20V DS breakdown voltage, 45A IDM, and 0.023 ohm RDS(on). Commonly used for switching applications in a small outline package with 8 terminals. Operating range from -55 to 150 °C, MIL-STD-202 compliant.

8 mJ

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

5.2 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

S-PDSO-N8

e4

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.76 W

45 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

AOD609G by Alpha & Omega Semiconductor

AOD609G

Alpha & Omega Semiconductor

AOD609G by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements, built-in diode. It has 40V DS Breakdown Voltage, 30A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

12 A

12 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

TO-252

R-PSSO-G4

2

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL AND P-CHANNEL

2 W

27 W

30 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NXH80B120MNQ0SNG by Onsemi

NXH80B120MNQ0SNG

Onsemi

NXH80B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode and operates in enhancement mode. With a max pulsed drain current of 69A and max power dissipation of 69W, this MOSFET is designed for high-power applications.

ISOLATED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

23 A

23 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X22

e3

2

22

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

69 W

69 A

NO

Matte Tin (Sn) - annealed

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

AOCR32326 by Alpha & Omega Semiconductor

AOCR32326

Alpha & Omega Semiconductor

AOCR32326 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, 130A IDM, and 0.0042 ohm RDS. It is used for SWITCHING applications in COMMON DRAIN configuration. Operating temp range: -55 to 150 °C.

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

28 A

.0042 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.75 W

130 A

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN15M5UCA6-7 by Diodes Incorporated

DMN15M5UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 90 A;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

11.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XBCC-N6

e4

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2 W

90 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN11M2UCA14-7 by Diodes Incorporated

DMN11M2UCA14-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; No. of Terminals: 14; Transistor Application: SWITCHING;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

25.5 A

.0034 ohm

METAL-OXIDE SEMICONDUCTOR

304 pF

R-XBCC-N14

e4

2

14

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

3.3 W

80 A

MIL-STD-202

YES

NICKEL GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN3003LCA8-7 by Diodes Incorporated

DMN3003LCA8-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Reference Standard: MIL-STD-202; Package Style (Meter): CHIP CARRIER;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

.0051 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

R-XBCC-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.5 W

MIL-STD-202

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN2030UCA4-7 by Diodes Incorporated

DMN2030UCA4-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; JESD-609 Code: e4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.05 ohm

METAL-OXIDE SEMICONDUCTOR

54 pF

S-XBCC-N4

e4

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

1.9 W

MIL-STD-202

YES

NICKEL GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN2009UCA4-7 by Diodes Incorporated

DMN2009UCA4-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 4;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.0226 ohm

METAL-OXIDE SEMICONDUCTOR

107 pF

S-XBCC-N4

e4

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

1.9 W

MIL-STD-202

YES

NICKEL GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON