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AOD609G

Alpha & Omega Semiconductor

AOD609G by Alpha & Omega Semiconductor

AOD609G by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements, built-in diode. It has 40V DS Breakdown Voltage, 30A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.

Median Price

$0.410

Lifecycle Status

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1k+

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

USA . 26,730 parts In-Stock

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VNN

France . 4,019 parts In-Stock

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Vyrian

USA . 2,606 parts In-Stock

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Continental Prestige Electronics

USA . 2,574 parts In-Stock

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$0.410

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$0.402

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Argo Parts USA

USA . 1,911 parts In-Stock

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$0.398

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Netroflash

USA . 100 parts In-Stock

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$0.410

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$0.389

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$0.381

100

$0.410

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Corohmni

South Africa . 539 parts In-Stock

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$0.544

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Aztec Data Supply Inc.

USA . 500 parts In-Stock

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$0.810

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AZTECH Wire

Italy . 723 parts In-Stock

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iodParts Technologies Inc.

India . 5,000 parts In-Stock

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Overview

Experience the power of innovation with the AOD609G by Alpha & Omega Semiconductor. Designed for superior performance in switching applications, this Power Field Effect Transistor (FET) boasts a common drain configuration with 2 elements and a built-in diode, providing customers with unparalleled efficiency and reliability. With Alpha & Omega Semiconductor's commitment to quality and cutting-edge technology, the AOD609G delivers exceptional value and benefits to meet all your power needs. Discover the advantages of this N-Channel and P-Channel transistor today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the internal components, making it a reliable choice for various applications.

Polarity or Channel Type:

N-CHANNEL AND P-CHANNEL - Allows for versatile use in different circuit configurations, increasing flexibility in design options.

Configuration:

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE - Offers efficient power handling capabilities and built-in protection, making it suitable for high-performance applications.

Transistor Application:

SWITCHING - Ideal for switching applications due to its fast response time and low power consumption.

Surface Mount:

YES - Can be easily mounted on PCBs without the need for additional components, saving space and simplifying assembly.

Minimum DS Breakdown Voltage:

40 V - Provides a high level of voltage tolerance, ensuring reliable performance in high-voltage circuits.

Package Shape:

RECTANGULAR - Allows for compact and space-saving designs, suitable for applications where size is a critical factor.

Terminal Form:

GULL WING - Facilitates easy soldering and secure connection, ensuring a reliable electrical connection.

Operating Mode:

ENHANCEMENT MODE - Offers improved control over the transistor's switching behavior, enhancing overall circuit performance.

No. of Elements:

2 - Provides dual-channel capabilities for increased functionality and versatility in circuit design.

Maximum Pulsed Drain Current (IDM):

30 A - Capable of handling high current pulses, making it suitable for applications requiring bursts of power.

Maximum Drain Current (Abs) (ID):

12 A - Supports high continuous current flow, making it suitable for power-hungry applications.

No. of Terminals:

4 - Allows for easy integration into existing circuit layouts, simplifying installation and maintenance.

Maximum Power Dissipation (Abs):

27 W - Can handle high power dissipation levels, making it suitable for demanding applications.

Package Style (Meter):

SMALL OUTLINE - Offers a compact package size, ideal for applications where space is limited.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Provides reliable and efficient transistor operation for a wide range of applications.

Maximum Power Dissipation Ambient:

2 W - Capable of dissipating heat efficiently, ensuring stable performance even under high ambient temperatures.

Maximum Operating Temperature:

175 °C - Can operate reliably at elevated temperatures, making it suitable for demanding environments.

Transistor Element Material:

SILICON - Ensures high reliability and performance characteristics, suitable for a wide range of applications.

Minimum Operating Temperature:

55 °C - Can operate in extreme cold temperatures, making it suitable for use in a variety of environments.

Maximum Drain-Source On Resistance:

0.03 ohm - Provides low resistance for efficient power handling, making it suitable for high-current applications.

Terminal Position:

SINGLE - Simplifies connections and reduces complexity in circuit design, making it easy to integrate into existing systems.

Case Connection:

DRAIN - Offers a secure connection point for the drain terminal, ensuring reliable performance in various applications.

Maximum Feedback Capacitance (Crss):

40 pF - Provides low feedback capacitance for stable and reliable operation, suitable for high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) AOD609G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.03 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

30 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AOD609G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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