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AOD66923

Alpha & Omega Semiconductor

AOD66923 by Alpha & Omega Semiconductor

AOD66923 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 130A IDM, 45mJ EAS, and 0.015 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 73W in a SMALL OUTLINE package.

Median Price

$1.770

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,751 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.545

10k+ parts

$0.444

7,751

$1.770

$0.755

$0.545

$0.444

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.509

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500

$0.509

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Vyrian

USA . 10,284 parts In-Stock

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10,284

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VNN

France . 104 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 934 parts In-Stock

1+ parts

$0.509

100+ parts

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$0.499

934

$0.509

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$0.499

Argo Parts USA

USA . 247 parts In-Stock

1+ parts

$0.509

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$0.493

247

$0.509

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$0.493

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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iodParts Technologies Inc.

India . 8,096 parts In-Stock

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Overview

Unleash the power of innovation with the AOD66923 by Alpha & Omega Semiconductor. As a leader in the industry, Alpha & Omega Semiconductor offers top-quality Power Field Effect Transistors that are perfect for a variety of switching applications. With a single configuration and built-in diode, this N-CHANNEL FET provides enhanced performance and reliability. From its high maximum pulsing drain current to its low on-resistance, this transistor delivers exceptional value and efficiency. Trust Alpha & Omega Semiconductor to bring you cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the FET, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making this product suitable for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient current flow and protection against reverse voltage, enhancing the overall functionality of the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast operation and low power dissipation, making it ideal for efficient power management.

Surface Mount: YES

Being surface mountable, this FET is easy to install on circuit boards, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle higher voltage levels, improving its reliability in demanding applications.

Maximum Power Dissipation (Abs): 73 W

The high power dissipation capability allows this FET to handle high power levels without overheating, ensuring stable performance under load.

Maximum Operating Temperature: 150 °C

The wide operating temperature range enables this FET to function in varying environmental conditions, making it suitable for a wide range of applications.

Technical Specifications

Power Field Effect Transistors (FET) AOD66923 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor

Specs

Avalanche Energy Rating (EAS):

45 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

58 A

Maximum Drain Current (ID):

58 A

Maximum Drain-Source On Resistance:

.015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7.5 pF

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

130 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AOD66923 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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