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Infineon Technologies Power Bipolar Junction Transistors (BJT) 17

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
IGB01N120H2ATMA1 by Infineon Technologies

IGB01N120H2ATMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3.2 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

BCP55E6327HTSA1 by Infineon Technologies

BCP55E6327HTSA1

Infineon Technologies

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;

COLLECTOR

SINGLE

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

IGD01N120H2BUMA1 by Infineon Technologies

IGD01N120H2BUMA1

Infineon Technologies

Infineon's IGD01N120H2BUMA1 is a NPN BJT transistor with 1200V VCE, 3.2A IC, and 150°C max operating temp. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

3.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

e3

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IGP01N120H2XKSA1 by Infineon Technologies

IGP01N120H2XKSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Terminal Position: SINGLE;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BCP6925E6327HTSA1 by Infineon Technologies

BCP6925E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: DUAL;

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP5610E6327HTSA1 by Infineon Technologies

BCP5610E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5616E6327HTSA1 by Infineon Technologies

BCP5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCX5216E6327HTSA1 by Infineon Technologies

BCX5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH: 1000

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

125 MHz

.5 V

BDP947E6327HTSA1 by Infineon Technologies

BDP947E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

45 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP949E6327HTSA1 by Infineon Technologies

BDP949E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

60 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP953E6327HTSA1 by Infineon Technologies

BDP953E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

100 V

SINGLE

15

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCX53H6327XTSA1 by Infineon Technologies

BCX53H6327XTSA1

Infineon Technologies

BCX53H6327XTSA1 by Infineon Technologies is a PNP BJT transistor with 80V VCEO, 1A IC, and 2W power dissipation. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. This surface-mount transistor in a small outline package is AEC-Q101 compliant.

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

125 MHz

BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5516H6327XTSA1 by Infineon Technologies

BCP5516H6327XTSA1

Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

TR, 7 INCH; 1000

COLLECTOR

1 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP6925H6327XTSA1 by Infineon Technologies

BCP6925H6327XTSA1

Infineon Technologies

Infineon's BCP6925H6327XTSA1 is a PNP Power BJT with 160 min hFE, 20V VCE max, and 1A IC max. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCX5316H6327XTSA1 by Infineon Technologies

BCX5316H6327XTSA1

Infineon Technologies

Infineon's BCX5316H6327XTSA1 is a PNP BJT with 2W power dissipation, hFE of 100, and IC of 1A. Ideal for surface mount applications, it operates up to 150°C making it suitable for power management in various electronic devices.

1 A

SINGLE

100

e3

1

1

150 Cel

245

PNP

2 W

Other Transistors

YES

TIN

BCP68-25H6327 by Infineon Technologies

BCP68-25H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 60;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz