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13 MHz Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MJF18008G by Onsemi

MJF18008G

Onsemi

The Onsemi MJF18008G is a NPN BJT transistor with 450V VCEO, 8A IC, and 45W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. Its package style is flange mount with through-hole terminals.

ISOLATED

8 A

450 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz

BUL642D2G by Onsemi

BUL642D2G

Onsemi

BUL642D2G by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a compact package. Suitable for use in various electronic devices due to its high collector current and temperature capabilities.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

3 A

440 V

SINGLE WITH BUILT-IN DIODE

18

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

13 MHz

MJD18002D2T4G by Onsemi

MJD18002D2T4G

Onsemi

MJD18002D2T4G by Onsemi is a NPN BJT transistor with 450V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. With an hFE of 6 and fT of 13MHz, this transistor operates b/w -65 °C to +150°C.

FREE WHEELING DIODE

COLLECTOR

2 A

450 V

SINGLE WITH BUILT-IN DIODE

6

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

50 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

13 MHz

MJE18002G by Onsemi

MJE18002G

Onsemi

MJE18002G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 450V, max. collector current of 2A, and min. DC current gain of 6. It is used for switching applications due to its high power dissipation of 50W and operating temperature up to 150 °C in a flange mount package style.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

2 A

450 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

50 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz

MJE18004G by Onsemi

MJE18004G

Onsemi

MJE18004G by Onsemi is a NPN BJT transistor with 450V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

5 A

450 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz

MJE18004D2G by Onsemi

MJE18004D2G

Onsemi

MJE18004D2G by Onsemi is a NPN BJT transistor with 450V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

5 A

450 V

SINGLE WITH BUILT-IN DIODE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz