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10 MHz Power Bipolar Junction Transistors (BJT) 8

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD682T by Onsemi

BD682T

Onsemi

BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

4 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

40 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

10 MHz

MJE13003G by Onsemi

MJE13003G

Onsemi

MJE13003G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 1.5A, and min. DC current gain of 5. It is used for switching applications due to its high power dissipation capability of 40W in a flange mount package style.

1.5 A

400 V

SINGLE

5

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N5655G by Onsemi

2N5655G

Onsemi

2N5655G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V and max. power dissipation of 20W. Ideal for switching applications, it has a min. DC current gain of 5 and operates at up to 150°C, making it suitable for various electronic circuits.

.5 A

250 V

SINGLE

5

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

20 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N5657G by Onsemi

2N5657G

Onsemi

The Onsemi 2N5657G is a NPN power BJT with max. collector-emitter voltage of 350V and max. collector current of 0.5A, ideal for switching applications with a max. power dissipation of 20W. Its single configuration and through-hole terminal form make it suitable for various electronic circuits requiring high-speed operation up to 10MHz transition frequency.

.5 A

350 V

SINGLE

5

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6107G by Onsemi

2N6107G

Onsemi

2N6107G by Onsemi is a PNP BJT transistor with 40W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications, it has a min hFE of 30 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

70 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6109G by Onsemi

2N6109G

Onsemi

2N6109G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 7A. It is commonly used for switching applications and has a min DC current gain of 30 (hFE).

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

50 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6111G by Onsemi

2N6111G

Onsemi

2N6111G by Onsemi is a PNP BJT transistor with max. power dissipation of 40W, max. collector-emitter voltage of 30V, and max. collector current of 7A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

30 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2SB817C-1E by Onsemi

2SB817C-1E

Onsemi

The Onsemi 2SB817C-1E is a PNP BJT transistor with max. collector-emitter voltage of 140V and max. collector current of 12A. With a min DC current gain of 35 and nominal transition frequency of 10MHz, it's ideal for switching applications in various electronic circuits.

12 A

140 V

SINGLE

35

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz