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75 W Power Bipolar Junction Transistors (BJT) 8

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUL58D by STMicroelectronics

BUL58D

STMicroelectronics

BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

8 A

450 V

SINGLE WITH BUILT-IN DIODE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

85 W

75 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1980 ns

2 V

BUL642D2G by Onsemi

BUL642D2G

Onsemi

BUL642D2G by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a compact package. Suitable for use in various electronic devices due to its high collector current and temperature capabilities.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

3 A

440 V

SINGLE WITH BUILT-IN DIODE

18

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

13 MHz

2N6040G by Onsemi

2N6040G

Onsemi

2N6040G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode, and resistor. It has a max collector-emitter voltage of 60V, max current of 8A, and min DC current gain of 1000. Ideal for switching applications due to its high power dissipation of 75W and operating temp up to 150°C.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

8 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

2N6042G by Onsemi

2N6042G

Onsemi

2N6042G by Onsemi is a PNP BJT with 100V VCEO, 8A IC, and 75W power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With an hFE of 1000, it operates b/w -65°C to 150°C in a flange mount package.

COLLECTOR

8 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL45G by Onsemi

BUL45G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 12 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A;

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

5 A

400 V

SINGLE

7

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

12 MHz

MJE18004G by Onsemi

MJE18004G

Onsemi

MJE18004G by Onsemi is a NPN BJT transistor with 450V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

5 A

450 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz

MJE18004D2G by Onsemi

MJE18004D2G

Onsemi

MJE18004D2G by Onsemi is a NPN BJT transistor with 450V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

5 A

450 V

SINGLE WITH BUILT-IN DIODE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz

MJE13005PBFREE by Central Semiconductor

MJE13005PBFREE

Central Semiconductor

MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.

COLLECTOR

4 A

130 pF

400 V

SINGLE

8

900 ns

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

75 W

700 ns

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

4900 ns

800 ns

1 V