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300 W Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE2349 by Nte Electronics

NTE2349

Nte Electronics

NTE2349 by Nte Electronics is a NPN Power BJT with 300W power dissipation, 120V max collector-emitter voltage, and 50A max collector current. Ideal for high-power applications requiring Darlington configuration with built-in diode and resistor in a round package shape.

COLLECTOR

50 A

120 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

400

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

300 W

300 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

SILICON

2N5684G by Onsemi

2N5684G

Onsemi

Onsemi's 2N5684G is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. current of 50A, and power dissipation of 300W. Ideal for switching applications due to its single configuration and high operating temperature range (-65 to 200 °C).

COLLECTOR

50 A

80 V

SINGLE

5

TO-204AE

O-MBFM-P2

e1

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

PNP

300 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

SWITCHING

SILICON

2 MHz

MJ11029G by Onsemi

MJ11029G

Onsemi

The Onsemi MJ11029G is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector current of 50A, min DC current gain of 400 (hFE), and max power dissipation of 300W. With a max operating temp of 200 °C and Vce of 60V, it features a metal package body suitable for flange mount installations.

COLLECTOR

50 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

400

TO-204AA

O-MBFM-P2

e1

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

300 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

MJ14001G by Onsemi

MJ14001G

Onsemi

The Onsemi MJ14001G is a PNP BJT transistor with 60V VCE, 60A IC, and 300W power dissipation. Ideal for switching applications, it has a min hFE of 5 and operates up to 200 °C. The package style is flange mount with a round shape and metal body material.

COLLECTOR

60 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e1

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

300 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

SWITCHING

SILICON

MJ14002G by Onsemi

MJ14002G

Onsemi

The Onsemi MJ14002G is a NPN BJT transistor with 80V VCEO, 60A IC, and 300W Ptot. It is ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element material and flange mount package make it suitable for high-temperature environments up to 200°C.

COLLECTOR

60 A

80 V

SINGLE

5

TO-204AA

O-MBFM-P2

e1

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

300 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

SWITCHING

SILICON

MJ11030G by Onsemi

MJ11030G

Onsemi

MJ11030G by Onsemi is a NPN power BJT with 300W Pd, 90V Vce, and 50A Ic. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. The transistor operates at up to 200 °C, making it suitable for high-power requirements.

COLLECTOR

50 A

90 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

400

TO-204AA

O-MBFM-P2

e1

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

260

NPN

300 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

AMPLIFIER

SILICON