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7 A Power Bipolar Junction Transistors (BJT) 10

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE196 by Nte Electronics

NTE196

Nte Electronics

NTE196 by Nte Electronics is a NPN BJT transistor with 50W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

COLLECTOR

7 A

70 V

SINGLE

2.3

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

4 MHz

STE07DE220 by STMicroelectronics

STE07DE220

STMicroelectronics

STE07DE220 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220 W, operates at up to 125 °C, and supports a collector current of 7 A. Ideal for high-performance electronic circuits, it comes in a flange mount package.

ISOLATED

7 A

SINGLE WITH BUILT-IN FET AND DIODE

R-XUFM-X4

1

4

125 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

220 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

KSC2335YTU by Fairchild Semiconductor

KSC2335YTU

Fairchild Semiconductor

KSC2335YTU by Fairchild Semiconductor is a NPN BJT transistor with 400V VCEO, 7A IC, and 40W Ptot. Ideal for switching applications due to its single configuration and hFE of 40. Package style is flange mount with through-hole terminals.

7 A

400 V

SINGLE

40

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2310FX by STMicroelectronics

ST2310FX

STMicroelectronics

ST2310FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

7 A

600 V

SINGLE

6.5

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2N6107G by Onsemi

2N6107G

Onsemi

2N6107G by Onsemi is a PNP BJT transistor with 40W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications, it has a min hFE of 30 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

70 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6109G by Onsemi

2N6109G

Onsemi

2N6109G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 7A. It is commonly used for switching applications and has a min DC current gain of 30 (hFE).

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

50 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6111G by Onsemi

2N6111G

Onsemi

2N6111G by Onsemi is a PNP BJT transistor with max. power dissipation of 40W, max. collector-emitter voltage of 30V, and max. collector current of 7A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

30 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

ST8812FP by STMicroelectronics

ST8812FP

STMicroelectronics

ST8812FP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 36W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-power circuits with through-hole mounting.

ISOLATED

7 A

600 V

SINGLE

4.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST8812FX by STMicroelectronics

ST8812FX

STMicroelectronics

ST8812FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

7 A

600 V

SINGLE

4.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2N6107PBFREE by Central Semiconductor

2N6107PBFREE

Central Semiconductor

2N6107PBFREE by Central Semiconductor is a PNP BJT with hFE of 30, VCEO of 70V, and IC of 7A. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style with through-hole terminals in a rectangular package shape.

COLLECTOR

7 A

70 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz