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20 A Power Bipolar Junction Transistors (BJT) 7

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ST26025A by STMicroelectronics

ST26025A

STMicroelectronics

ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.

BUILT IN BIAS RESISTANCE RATIO IS 0.01

COLLECTOR

20 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

160 W

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

STC20DE90HP by STMicroelectronics

STC20DE90HP

STMicroelectronics

STC20DE90HP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 46W, a collector current of 20A, and a min DC gain (hFE) of 4. Ideal for efficient control in electronic circuits.

20 A

SINGLE WITH BUILT-IN FET AND DIODE

4

TO-247

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

46 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW2040 by STMicroelectronics

STW2040

STMicroelectronics

STW2040 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125 W, operates up to 150 °C, and supports collector-emitter voltages up to 500 V. Ideal for high-performance electronic circuits.

20 A

500 V

SINGLE

10

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2N3772G by Onsemi

2N3772G

Onsemi

2N3772G by Onsemi is a NPN BJT transistor with 150W power dissipation, 60V max collector-emitter voltage, and 20A max collector current. Ideal for switching applications due to its single configuration and -65°C to 200°C operating temperature range.

COLLECTOR

20 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

.2 MHz

2N5038G by Onsemi

2N5038G

Onsemi

2N5038G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 90V, max. operating temp. of 200°C, and max. power dissipation of 140W. Ideal for switching applications due to its single configuration and high collector current capability up to 20A at a min DC current gain of 20 (hFE).

COLLECTOR

20 A

90 V

SINGLE

20

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

140 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

60 MHz

2N6286G by Onsemi

2N6286G

Onsemi

2N6286G by Onsemi is a PNP power BJT with a max collector current of 20A and a min DC current gain of 100. It features a built-in diode and resistor, making it suitable for amplifier applications. With a max power dissipation of 160W and an operating temperature up to 200 °C, it offers reliable performance in various high-power circuits.

COLLECTOR

20 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

160 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

BUV26G by Onsemi

BUV26G

Onsemi

BUV26G by Onsemi is a NPN Power BJT with 90V VCEO, 20A IC, and 85W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and tin terminal finish.

COLLECTOR

20 A

90 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

85 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON