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283 W Insulated Gate Bipolar Transistors (IGBT) 13

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW40V60DLF by STMicroelectronics

STGW40V60DLF

STMicroelectronics

STGW40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175 °C and is ideal for high-power applications like motor drives and inverters.

80 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT40V60DF by STMicroelectronics

STGWT40V60DF

STMicroelectronics

STGWT40V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 283W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 241ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGWT40V60DLF by STMicroelectronics

STGWT40V60DLF

STMicroelectronics

STGWT40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 283W Pd. It operates up to 175 °C making it ideal for high-power applications in industries like automotive, renewable energy, and industrial automation.

80 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT40H60DLFB by STMicroelectronics

STGWT40H60DLFB

STMicroelectronics

STGWT40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.

80 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT40H65DFB by STMicroelectronics

STGWT40H65DFB

STMicroelectronics

STGWT40H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 283W power dissipation, 650V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

80 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGB40V60F by STMicroelectronics

STGB40V60F

STMicroelectronics

STGB40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V VCE, 80A IC, and 283W power dissipation. Ideal for power control applications, it has a toff of 241ns and ton of 73ns.

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

283 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGP40V60F by STMicroelectronics

STGP40V60F

STMicroelectronics

STGP40V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 241ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

283 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGWT40H65FB by STMicroelectronics

STGWT40H65FB

STMicroelectronics

STGWT40H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

80 A

650 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

STGWA40H65DFB by STMicroelectronics

STGWA40H65DFB

STMicroelectronics

STGWA40H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

STGWA40H65FB by STMicroelectronics

STGWA40H65FB

STMicroelectronics

STGWA40H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

80 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

52 ns

2 V

STGW40H65DFB-4 by STMicroelectronics

STGW40H65DFB-4

STMicroelectronics

STGW40H65DFB-4 IGBT from STMicroelectronics features a max VCEsat of 2V, supports up to 80A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for power control applications, it ensures efficient performance in demanding environments. Its robust design includes a built-in diode for enhanced reliability.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

209 ns

54.8 ns

2 V

STGWA40H60DLFB by STMicroelectronics

STGWA40H60DLFB

STMicroelectronics

STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

202 ns

2 V

STGWA40HP65FB by STMicroelectronics

STGWA40HP65FB

STMicroelectronics

STGWA40HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

202 ns

169 ns

2 V