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35 A Insulated Gate Bipolar Transistors (IGBT) 16

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM35GB120DN2HOSA1 by Infineon Technologies

BSM35GB120DN2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Terminal Form: UNSPECIFIED; No. of Terminals: 7;

ISOLATED

35 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

450 ns

120 ns

BSM25GD120DN2BOSA1 by Infineon Technologies

BSM25GD120DN2BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Terminals: 17; Maximum Operating Temperature: 150 Cel;

ISOLATED

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

450 ns

140 ns

BSM25GD120DN2E3224BOSA1 by Infineon Technologies

BSM25GD120DN2E3224BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;

ISOLATED

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

450 ns

140 ns

BSM15GD120DLCE3224BOSA1 by Infineon Technologies

BSM15GD120DLCE3224BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;

ISOLATED

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X17

6

17

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

390 ns

130 ns

BSM15GP120BOSA1 by Infineon Technologies

BSM15GP120BOSA1

Infineon Technologies

Infineon's BSM15GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 35A. It has a nominal turn-off time of 465ns and turn-on time of 121ns, making it ideal for high-power applications requiring fast switching capabilities in industrial settings.

ISOLATED

35 A

1200 V

COMPLEX

R-XUFM-X24

e3

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

MATTE TIN

UNSPECIFIED

UPPER

SILICON

465 ns

121 ns

BSM20GP60BOSA1 by Infineon Technologies

BSM20GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn On Time (ton): 100 ns; Package Style (Meter): FLANGE MOUNT;

ISOLATED

35 A

600 V

COMPLEX

R-XUFM-X24

7

24

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

310 ns

100 ns

FS20R06W1E3BOMA1 by Infineon Technologies

FS20R06W1E3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;

ISOLATED

35 A

600 V

COMPLEX

R-XUFM-X15

6

15

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

320 ns

57 ns

FS20R06W1E3B11BOMA1 by Infineon Technologies

FS20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Elements: 6; Terminal Form: UNSPECIFIED;

ISOLATED

35 A

600 V

COMPLEX

R-XUFM-X18

6

18

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

320 ns

57 ns

STGWF30NC60S by STMicroelectronics

STGWF30NC60S

STMicroelectronics

STGWF30NC60S by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 1.9V, supports up to 35A collector current, and operates at temperatures from -55 °C to 150°C. Its robust design ensures efficient performance in demanding environments.

ISOLATED

35 A

600 V

SINGLE

5.75 V

20 V

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

79 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

555 ns

30 ns

1.9 V

A1P35S12M3 by STMicroelectronics

A1P35S12M3

STMicroelectronics

A1P35S12M3 by STMicroelectronics is a complex N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

142 ns

2.45 V

A2C35S12M3-F by STMicroelectronics

A2C35S12M3-F

STMicroelectronics

A2C35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

364 ns

145 ns

2.45 V

A2C35S12M3 by STMicroelectronics

A2C35S12M3

STMicroelectronics

A2C35S12M3 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency power management in industrial systems.

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

364 ns

170 ns

2.45 V

A1P35S12M3-F by STMicroelectronics

A1P35S12M3-F

STMicroelectronics

A1P35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

35 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

142 ns

2.45 V

NXH35C120L2C2SG by Onsemi

NXH35C120L2C2SG

Onsemi

NXH35C120L2C2SG by Onsemi is an N-CHANNEL IGBT with 7 elements, including a brake IGBT and three-phase diode bridge. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications, this IGBT operates b/w -40°C to 150°C temperature range.

ISOLATED

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR

6.8 V

20 V

R-PDIP-T26

7

26

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

POWER CONTROL

SILICON

485 ns

240 ns

2.4 V

NXH35C120L2C2S1G by Onsemi

NXH35C120L2C2S1G

Onsemi

NXH35C120L2C2S1G by Onsemi is an IGBT with 6 elements, built-in diode, and thermistor in a plastic/epoxy package. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications requiring N-channel configuration and three-phase diode bridge setup.

ISOLATED

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

6.8 V

20 V

R-PDIP-T26

6

26

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

NO

THROUGH-HOLE

DUAL

POWER CONTROL

SILICON

485 ns

240 ns

2.4 V

NXH35C120L2C2ESG by Onsemi

NXH35C120L2C2ESG

Onsemi

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Body Material: UNSPECIFIED; Nominal Turn Off Time (toff): 485 ns;

35 A

1200 V

COMPLEX

6.8 V

20 V

R-XDIP-T26

6

26

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

IN-LINE

N-CHANNEL

NO

THROUGH-HOLE

DUAL

POWER CONTROL

SILICON

485 ns

240 ns

2.4 V