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140 A Insulated Gate Bipolar Transistors (IGBT) 13

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW75N60H3FKSA1 by Infineon Technologies

IGW75N60H3FKSA1

Infineon Technologies

Infineon Technologies' IGW75N60H3FKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 140A max collector current. Ideal for power control applications, it features a plastic/epoxy package body, single configuration, and through-hole terminal form.

COLLECTOR

140 A

600 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

IGW100N60H3FKSA1 by Infineon Technologies

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 140 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

140 A

600 V

SINGLE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

333 ns

72 ns

2.3 V

FS100R12KT3BOSA1 by Infineon Technologies

FS100R12KT3BOSA1

Infineon Technologies

FS100R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V, nominal turn off time of 610ns, and can handle a max collector current of 140A. This IGBT is commonly used in applications requiring high power switching such as motor drives and inverters due to its fast turn on/off times and high current capacity.

ISOLATED

140 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns

FS100R12KE3BOSA1 by Infineon Technologies

FS100R12KE3BOSA1

Infineon Technologies

FS100R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 140A, and turn off time of 610ns. Ideal for applications requiring high power switching like motor drives and renewable energy systems.

ISOLATED

140 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns

MG12100W-XN2MM by Littelfuse

MG12100W-XN2MM

Littelfuse

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 140 A; No. of Elements: 6; Nominal Turn Off Time (toff): 610 ns;

ISOLATED

140 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X35

6

35

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

MG12100S-BN2MM by Littelfuse

MG12100S-BN2MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 140 A; Maximum Operating Temperature: 125 Cel; Transistor Element Material: SILICON;

ISOLATED

140 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

TDB6HK180N16RRBOSA1 by Infineon Technologies

TDB6HK180N16RRBOSA1

Infineon Technologies

TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.

UL RECOGNIZED

ISOLATED

140 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X29

1

29

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

515 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

410 ns

190 ns

2.2 V

DDB6U180N16RR by Infineon Technologies

DDB6U180N16RR

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

ISOLATED

140 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

6.5 V

20 V

R-XUFM-X26

1

26

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

515 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

210 ns

2.2 V

NGTB50N65S1WG by Onsemi

NGTB50N65S1WG

Onsemi

The Onsemi NGTB50N65S1WG is an N-CHANNEL IGBT with a max VCEsat of 2.45V and IC of 140A. Ideal for POWER CONTROL applications, it has a turn-off time of 228ns and can operate at temperatures ranging from -55 to 175 °C.

140 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

228 ns

118 ns

2.45 V

DDB6U180N16RRB11BPSA1 by Infineon Technologies

DDB6U180N16RRB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 140 A; JESD-30 Code: R-XUFM-X26; Terminal Position: UPPER;

ISOLATED

140 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

R-XUFM-X26

1

26

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

210 ns

NXH160T120L2Q1SG by Onsemi

NXH160T120L2Q1SG

Onsemi

NXH160T120L2Q1SG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.5V, and max power dissipation of 280W. Ideal for power control applications, it has a max VCE of 1200V and max IC of 140A. Operating temp ranges from -40 to 150 °C making it suitable for various industrial uses.

ISOLATED

140 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

6.9 V

20 V

R-XUFM-X30

4

30

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

280 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.5 V

IXYT40N120A4HV by Littelfuse

IXYT40N120A4HV

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 140 A; No. of Terminals: 2;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

600 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1040 ns

67 ns

1.8 V

IXYH55N120C4 by Littelfuse

IXYH55N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 140 A; Maximum Operating Temperature: 175 Cel;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

650 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

222 ns

70 ns

2.5 V