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14 A Insulated Gate Bipolar Transistors (IGBT) 12

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGPL6NC60DI by STMicroelectronics

STGPL6NC60DI

STMicroelectronics

STGPL6NC60DI by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 14A IC, and 56W Ptot. It features a built-in diode for power control applications. The transistor has a toff of 122ns and ton of 10.5ns, making it suitable for high-speed switching operations in various industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

56 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

122 ns

10.5 ns

IKA15N65H5XKSA1 by Infineon Technologies

IKA15N65H5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33.3 W; Maximum Collector Current (IC): 14 A; Package Style (Meter): FLANGE MOUNT;

ISOLATED

14 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

33.3 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

196 ns

24 ns

2.1 V

STGP7NB60HD by STMicroelectronics

STGP7NB60HD

STMicroelectronics

STGP7NB60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 220ns.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGB7NB60HDT4 by STMicroelectronics

STGB7NB60HDT4

STMicroelectronics

STGB7NB60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its built-in diode, fast turn-off time of 220ns, and small outline package style.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGF19NC60WD by STMicroelectronics

STGF19NC60WD

STMicroelectronics

STGF19NC60WD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 32W, and operates at up to 150 °C. Its fast switching times (ton: 25ns, toff: 127ns) enhance efficiency.

ISOLATED

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

32 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

127 ns

25 ns

STGBL6NC60DT4 by STMicroelectronics

STGBL6NC60DT4

STMicroelectronics

STGBL6NC60DT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for applications in energy conversion and motor drives.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

STGPL6NC60D by STMicroelectronics

STGPL6NC60D

STMicroelectronics

STGPL6NC60D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for high-temperature environments with a max operating temp of 150 °C.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

122 ns

10.5 ns

STGB7NB60KDT4 by STMicroelectronics

STGB7NB60KDT4

STMicroelectronics

STGB7NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and operates at up to 150 °C. Ideal for applications requiring high efficiency in compact designs.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGP7NB60KD by STMicroelectronics

STGP7NB60KD

STMicroelectronics

STGP7NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 202ns. Ideal for high-performance switching in industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGB7NB40LZT4 by STMicroelectronics

STGB7NB40LZT4

STMicroelectronics

STGB7NB40LZT4 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 370 V, power dissipation of 100 W, and operates at up to 175 °C. This surface-mount device ensures efficient performance with built-in diode and resistor.

VOLTAGE CLAMPING

COLLECTOR

14 A

370 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

8000 ns

5400 ns

STGIPL14K60 by STMicroelectronics

STGIPL14K60

STMicroelectronics

STGIPL14K60 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 2.5V max, and 14A IC. Ideal for MOTOR CONTROL applications, it has a turn-off time of 425ns and operates up to 125°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with 38 terminals in THROUGH-HOLE form.

ISOLATED

14 A

600 V

COMPLEX

R-PDIP-T38

e3

6

38

125 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

44 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

MOTOR CONTROL

SILICON

425 ns

400 ns

2.5 V

STGB7H60DF by STMicroelectronics

STGB7H60DF

STMicroelectronics

STGB7H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 14A, and Pmax of 88W. Ideal for POWER CONTROL applications due to its fast turn-off time (263ns) and high operating temperature range (-55 to 175°C). The device comes in a small outline package with built-in diode for surface mount installation.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

6.9 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

88 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

263 ns

42.8 ns

1.95 V