Loading...

10 A Insulated Gate Bipolar Transistors (IGBT) 17

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIGC11T60NCX1SA2 by Infineon Technologies

SIGC11T60NCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 130 ns; Package Body Material: UNSPECIFIED;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

130 ns

28 ns

SIGC11T60SNCX1SA1 by Infineon Technologies

SIGC11T60SNCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; JESD-30 Code: S-XUUC-N2; Transistor Application: POWER CONTROL;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

224 ns

40 ns

SIGC12T60SNCX1SA3 by Infineon Technologies

SIGC12T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

329 ns

50 ns

SIGC12T60NCX1SA5 by Infineon Technologies

SIGC12T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 135 ns; Terminal Position: UPPER;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC06T60EX1SA2 by Infineon Technologies

SIGC06T60EX1SA2

Infineon Technologies

N-CHANNEL; Maximum Collector Current (IC): 10 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

10 A

600 V

6.5 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

NOT SPECIFIED

STGD7NB120S-1 by STMicroelectronics

STGD7NB120S-1

STMicroelectronics

STGD7NB120S-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 10A IC, and 55W Pd. Ideal for MOTOR CONTROL applications due to its SILICON material, 150 °C max temp, and 840ns turn on time. Package: PLASTIC/EPOXY IN-LINE with THROUGH-HOLE terminals.

10 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

840 ns

STGF10NC60SD by STMicroelectronics

STGF10NC60SD

STMicroelectronics

STGF10NC60SD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 560ns, and can handle up to 10A current. Ideal for applications in industrial motor drives and power converters.

ULTRA FAST

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

560 ns

22.5 ns

STGP3NB60HD by STMicroelectronics

STGP3NB60HD

STMicroelectronics

STGP3NB60HD by STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 70 W, and fast switching times (ton: 16 ns, toff: 168 ns). Its flange mount design ensures reliable performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

168 ns

16 ns

STGB3NB60KDT4 by STMicroelectronics

STGB3NB60KDT4

STMicroelectronics

STGB3NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 10A collector current, and fast switching times (ton: 19ns, toff: 220ns). Ideal for applications in energy conversion and motor drives.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGP3NB60KD by STMicroelectronics

STGP3NB60KD

STMicroelectronics

STGP3NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 220ns, and can handle up to 68W dissipation. Ideal for high-performance switching in industrial systems.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGD3NB60HDT4 by STMicroelectronics

STGD3NB60HDT4

STMicroelectronics

STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

168 ns

25 ns

STGD5NB120SZ-1 by STMicroelectronics

STGD5NB120SZ-1

STMicroelectronics

STGD5NB120SZ-1 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 10 A collector current, and operates at up to 150 °C. Its built-in diode enhances performance in various electronic systems.

COLLECTOR

10 A

1200 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5 V

20 V

TO-251AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

14100 ns

850 ns

STGF7NC60HD by STMicroelectronics

STGF7NC60HD

STMicroelectronics

STGF7NC60HD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 221ns, and operates at up to 150 °C. Its robust design ensures efficient performance in demanding environments.

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns

IKA06N60TXKSA1 by Infineon Technologies

IKA06N60TXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 17 ns;

HIGH SPEED

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

249 ns

17 ns

STGB5H60DF by STMicroelectronics

STGB5H60DF

STMicroelectronics

STGB5H60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 1.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

BULK: 1000

COLLECTOR

10 A

600 V

SINGLE WITH BUILT-IN DIODE

6.9 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

88 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

39 ns

1.95 V

FP10R12W1T7B11BOMA1 by Infineon Technologies

FP10R12W1T7B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

10 A

1200 V

COMPLEX

6.45 V

20 V

R-XUFM-X23

7

23

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1005 ns

45 ns

ISL9V2040D3STV by Onsemi

ISL9V2040D3STV

Onsemi

ISL9V2040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a collector-emitter voltage of 390V. Ideal for automotive ignition applications, it has a built-in diode and resistor, GULL WING terminals, and can operate b/w -40 to 175 °C.

COLLECTOR

10 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

130 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

6000 ns

2780 ns

1.9 V