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Texas Instruments SRAM 15

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
TMS62828L-85NW by Texas Instruments

TMS62828L-85NW

Texas Instruments

TMS62828L-85NW by Texas Instruments is a 128Kx8 SRAM with 85ns access time, operating at 5V. It features 3-STATE output characteristics and consumes a max of 35mA supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

85 ns

COMMON

R-PDIP-T32

1048576 bit

STANDARD SRAM

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.00005 Amp

2 V

SRAMs

35 mA

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

SMV512K32HFG by Texas Instruments

SMV512K32HFG

Texas Instruments

Texas Instruments' SMV512K32HFG is a 512Kx32 SRAM with 22MHz clock frequency, operating at -55 to 125°C. It features common I/O type, 3-STATE output characteristics, and gold terminal finish. Ideal for military applications requiring fast access times and low standby current consumption.

20 ns

22 MHz

COMMON

R-CQFP-F76

e4

25.31 mm

16777216 bit

STANDARD SRAM

32

1

1

76

524288 words

512K

ASYNCHRONOUS

125 Cel

-55 Cel

512KX32

3-STATE

YES

CERAMIC, METAL-SEALED COFIRED

GQFF

TPAK76,2SQ,25

RECTANGULAR

FLATPACK, GUARD RING

PARALLEL

1.8

Not Qualified

38535V;38534K;883S

2.67 mm

.00033 Amp

1.7 V

SRAMs

635 mA

3.6 V

3 V

1.8

YES

CMOS

MILITARY

GOLD

FLAT

.64 mm

QUAD

20.46 mm

SN74ACT2160-17FM by Texas Instruments

SN74ACT2160-17FM

Texas Instruments

The Texas Instruments SN74ACT2160-17FM is a 16Kx4 CACHE TAG SRAM with 17 ns access time, operating at 5V. It features 3-STATE output characteristics and operates in asynchronous mode. Ideal for applications requiring fast memory access in commercial temperature environments.

17 ns

8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM

R-PQCC-J32

65536 bit

CACHE TAG SRAM

4

1

1

32

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

.15 Amp

SRAMs

180 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

SN74ACT2152A-20FN by Texas Instruments

SN74ACT2152A-20FN

Texas Instruments

SN74ACT2152A-20FN by Texas Instruments is a 2Kx8 CACHE TAG SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. This SRAM chip is ideal for applications requiring fast memory access in commercial temperature environments.

20 ns

S-PQCC-J28

11.5062 mm

16384 bit

CACHE TAG SRAM

8

1

1

28

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC28,.5SQ

SQUARE

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

4.57 mm

SRAMs

125 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

11.5062 mm

SNJ54LS670FK by Texas Instruments

SNJ54LS670FK

Texas Instruments

SNJ54LS670FK by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and has an access time of 45ns. Ideal for military applications requiring high-speed memory in a compact chip carrier package.

45 ns

35 MHz

S-CQCC-N20

e0

8.89 mm

16 bit

STANDARD SRAM

4

1

1

20

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC20,.35SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

MIL-PRF-38535

2.03 mm

.05 Amp

Other Memory ICs

5.25 V

4.75 V

5

YES

TTL

MILITARY

TIN LEAD

NO LEAD

1.27 mm

QUAD

8.89 mm

SN74AS870DWR by Texas Instruments

SN74AS870DWR

Texas Instruments

SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.

15 ns

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

R-PDSO-G24

15.4 mm

64 bit

MULTI-PORT SRAM

4

1

2

24

16 words

16

ASYNCHRONOUS

70 Cel

0 Cel

16X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

2.65 mm

5.5 V

4.5 V

5

YES

TTL

COMMERCIAL

GULL WING

1.27 mm

DUAL

7.5 mm

BQ4010LYMA-70N by Texas Instruments

BQ4010LYMA-70N

Texas Instruments

BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.

70 ns

R-XDMA-T28

37.72 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

CD74HCT670M96G4 by Texas Instruments

CD74HCT670M96G4

Texas Instruments

CD74HCT670M96G4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It has a max access time of 53ns and operates in parallel mode. This memory IC is ideal for military-grade applications requiring fast and reliable data storage.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

2/6

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTG4 by Texas Instruments

CD74HCT670MTG4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

2/6

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

BQ4013LYMA-70N by Texas Instruments

BQ4013LYMA-70N

Texas Instruments

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

70 ns

R-PDMA-P32

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

BQ4015LYMA-70N by Texas Instruments

BQ4015LYMA-70N

Texas Instruments

BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.

70 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

5

Not Qualified

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

BQ4011LYMA-70N by Texas Instruments

BQ4011LYMA-70N

Texas Instruments

BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

R-PDMA-P28

37.72 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

SNJ54LS670W by Texas Instruments

SNJ54LS670W

Texas Instruments

SNJ54LS670W by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and offers an access time of 45ns. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.

45 ns

35 MHz

R-GDFP-F16

e0

10.3 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

CERAMIC, GLASS-SEALED

DFP

FL16,.3

RECTANGULAR

FLATPACK

PARALLEL

5

Not Qualified

MIL-PRF-38535

2.03 mm

.05 Amp

Other Memory ICs

5.25 V

4.75 V

5

YES

TTL

MILITARY

TIN LEAD

FLAT

1.27 mm

DUAL

6.73 mm

CD74HCT670M96E4 by Texas Instruments

CD74HCT670M96E4

Texas Instruments

CD74HCT670M96E4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 53ns. Ideal for military-grade applications requiring fast and reliable memory storage in a compact small outline package.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTE4 by Texas Instruments

CD74HCT670MTE4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm