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28 SRAM 46

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C199CNL-15VXIT by Cypress Semiconductor

CY7C199CNL-15VXIT

Cypress Semiconductor

CY7C199CNL-15VXIT by Cypress Semiconductor is a 32Kx8 SRAM with 3-STATE output, operating at -40 to 85°C. It has a supply voltage of 4.5-5.5V and max access time of 15ns. Ideal for industrial applications requiring fast, asynchronous memory with common I/O type in small outline package.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.00015 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

30

7.5 mm

CY7C199D-10ZXIT by Cypress Semiconductor

CY7C199D-10ZXIT

Cypress Semiconductor

CY7C199D-10ZXIT by Cypress Semiconductor is a 32Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

10 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.003 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.55 mm

DUAL

30

8 mm

CY62256NLL-55ZXIT by Cypress Semiconductor

CY62256NLL-55ZXIT

Cypress Semiconductor

CY62256NLL-55ZXIT by Cypress Semiconductor is a 32KX8 SRAM with a max access time of 55 ns. It operates asynchronously at a nominal voltage of 5V and has a small outline, thin profile package style. It is commonly used in industrial applications requiring high-speed memory storage.

55 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.00001 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.55 mm

DUAL

30

8 mm

CY62256NLL-70SNXCT by Cypress Semiconductor

CY62256NLL-70SNXCT

Cypress Semiconductor

CY62256NLL-70SNXCT by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

20

7.5057 mm

SN74ACT2152A-20FN by Texas Instruments

SN74ACT2152A-20FN

Texas Instruments

SN74ACT2152A-20FN by Texas Instruments is a 2Kx8 CACHE TAG SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. This SRAM chip is ideal for applications requiring fast memory access in commercial temperature environments.

20 ns

S-PQCC-J28

11.5062 mm

16384 bit

CACHE TAG SRAM

8

1

1

28

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

NO

PLASTIC/EPOXY

QCCJ

LDCC28,.5SQ

SQUARE

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

Not Qualified

4.57 mm

SRAMs

125 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

11.5062 mm

CY62256LL-70PC by Cypress Semiconductor

CY62256LL-70PC

Cypress Semiconductor

CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.

70 ns

COMMON

R-PDIP-T28

e0

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY62256L-70SNC by Cypress Semiconductor

CY62256L-70SNC

Cypress Semiconductor

CY62256L-70SNC by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a small outline package.

70 ns

COMMON

R-PDSO-G28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

1

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

2.794 mm

.00002 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

7.5057 mm

CY62256LL-70ZI by Cypress Semiconductor

CY62256LL-70ZI

Cypress Semiconductor

CY62256LL-70ZI by Cypress Semiconductor is a 32KX8 SRAM with 70 ns access time, operating at 5V. It features common I/O type, 3-STATE output characteristics, and GULL WING terminal form. Ideal for industrial applications requiring fast and reliable memory storage in a compact package.

70 ns

COMMON

R-PDSO-G28

e0

11.8 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

8 mm

HT6256DC by Honeywell

HT6256DC

Honeywell

Honeywell's HT6256DC is a 32Kx8 SRAM with 3-STATE output, operating at -55 to 225°C. It features a parallel interface, 50ns access time, and MILITARY temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

50 ns

COMMON

R-CDIP-T28

e0

35.56 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

225 Cel

-55 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.445 mm

.00033 Amp

2.5 V

SRAMs

4 mA

5.5 V

4.5 V

5

NO

MOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1225Y-150-IND by Dallas Semiconductor

DS1225Y-150-IND

Dallas Semiconductor

DS1225Y-150-IND by Dallas Semiconductor is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at 5V, has a max access time of 150ns, and is designed for industrial temperature grades. This rectangular package with 28 terminals in-line is ideal for applications requiring reliable data storage in harsh environments.

150 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1225AD-200-IND by Dallas Semiconductor

DS1225AD-200-IND

Dallas Semiconductor

DS1225AD-200-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and is designed for industrial applications. The package style is in-line with through-hole terminals and a temperature range of -40 to 85°C.

200 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1225AD-70-IND by Dallas Semiconductor

DS1225AD-70-IND

Dallas Semiconductor

DS1225AD-70-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536 bit memory density. It operates at 5V, has a max access time of 70ns, and is designed for industrial applications requiring non-volatile memory storage.

70 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

DS1230Y-70-IND by Dallas Semiconductor

DS1230Y-70-IND

Dallas Semiconductor

DS1230Y-70-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.

70 ns

10 YEARS DATA RETENTION PERIOD

R-PDIP-T28

e0

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1230Y-200-IND by Dallas Semiconductor

DS1230Y-200-IND

Dallas Semiconductor

DS1230Y-200-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 262144-bit memory density. Operating at 5V, it has a max access time of 200ns and can withstand industrial temperatures up to 85°C. Ideal for applications requiring reliable data storage in harsh environments.

200 ns

10 YEARS DATA RETENTION PERIOD

R-PDIP-T28

e0

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

LH5164A-10L by Sharp Corporation

LH5164A-10L

Sharp Corporation

LH5164A-10L by Sharp Corp is an 8Kx8 SRAM with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for commercial applications requiring fast memory access in a compact IN-LINE package.

100 ns

R-PDIP-T28

36 mm

65536 bit

STANDARD SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

-10 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

Not Qualified

5.2 mm

2 V

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z18-100PC1 by STMicroelectronics

M48Z18-100PC1

STMicroelectronics

M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.

100 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z35-70PC1 by STMicroelectronics

M48Z35-70PC1

STMicroelectronics

M48Z35-70PC1 by STMicroelectronics is a 32Kx8 SRAM with 70ns access time and operates at 5V. It features a rectangular package style, asynchronous mode, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable memory storage in devices with parallel data processing needs.

70 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

SRAM STD

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58-70PC1 by STMicroelectronics

M48Z58-70PC1

STMicroelectronics

M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70PC1 by STMicroelectronics

M48Z58Y-70PC1

STMicroelectronics

M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

IDT71256SA20Y by Integrated Device Technology

IDT71256SA20Y

Integrated Device Technology

IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

20 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.5184 mm

IDT71256SA25YI by Integrated Device Technology

IDT71256SA25YI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;

25 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

BQ4010LYMA-70N by Texas Instruments

BQ4010LYMA-70N

Texas Instruments

BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.

70 ns

R-XDMA-T28

37.72 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

CY62256VNLL-70ZIT by Cypress Semiconductor

CY62256VNLL-70ZIT

Cypress Semiconductor

CY62256VNLL-70ZIT by Cypress is a 32Kx8 SRAM with 70ns access time, operating at 3V. It has a small outline package suitable for industrial applications. This CMOS memory IC offers parallel operation and 262144-bit memory density.

70 ns

R-PDSO-G28

11.8 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.55 mm

DUAL

8 mm

BQ4011LYMA-70N by Texas Instruments

BQ4011LYMA-70N

Texas Instruments

BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

R-PDMA-P28

37.72 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

CY22E016L-SZ45XC by Cypress Semiconductor

CY22E016L-SZ45XC

Cypress Semiconductor

CY22E016L-SZ45XC by Cypress Semiconductor is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it has an access time of 45ns and is ideal for commercial applications requiring non-volatile memory solutions. The package style is small outline, with Gull Wing terminals and a temperature range of 0-70°C.

45 ns

R-PDSO-G28

e4

17.905 mm

16384 bit

NON-VOLATILE SRAM

8

3

1

28

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

2.67 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.505 mm

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.

100 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

STK20C04-WF25I by Simtek

STK20C04-WF25I

Simtek

Simtek's STK20C04-WF25I is a 512x8 non-volatile SRAM with 4096-bit memory density. Operating at 5V, it has an access time of 25ns and consumes a max of 90mA. Ideal for industrial applications requiring reliable asynchronous memory solutions in a compact rectangular package.

25 ns

R-PDIP-T28

e3

36.83 mm

4096 bit

NON-VOLATILE SRAM

8

1

28

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

4.57 mm

.00075 Amp

SRAMs

90 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M68AW031AM70N6T by STMicroelectronics

M68AW031AM70N6T

STMicroelectronics

M68AW031AM70N6T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.

70 ns

COMMON

R-PDSO-G28

e0

11.8 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.000006 Amp

1.5 V

SRAMs

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

8 mm

M48Z58Y-70MH1E by STMicroelectronics

M48Z58Y-70MH1E

STMicroelectronics

M48Z58Y-70MH1E by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 70 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

70 ns

R-PDSO-G28

e3

18.1 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH1E by STMicroelectronics

M48Z35Y-70MH1E

STMicroelectronics

M48Z35Y-70MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a max access time of 70 ns, operating at 5V. It features a compact SO package and operates asynchronously, making it ideal for data storage in various electronic applications. With a commercial temp grade, it suits diverse environments.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH6E by STMicroelectronics

M48Z35Y-70MH6E

STMicroelectronics

M48Z35Y-70MH6E by STMicroelectronics is a non-volatile SRAM with a 32K x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring reliable data retention.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35AV-10MH1E by STMicroelectronics

M48Z35AV-10MH1E

STMicroelectronics

M48Z35AV-10MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features asynchronous operation with a max access time of 100 ns and operates b/w 0 °C to 70 °C. This compact, surface-mount device is perfect for commercial electronics needing efficient memory solutions.

100 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

IDT71256L35YI8 by Integrated Device Technology

IDT71256L35YI8

Integrated Device Technology

IDT71256L35YI8 by Integrated Device Technology is a 32Kx8 SRAM with 35ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous operation. Ideal for applications requiring fast and reliable memory storage in industrial environments.

35 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.0002 Amp

2 V

SRAMs

105 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

10 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

CACHE SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.002 Amp

3 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C106D-10VXI by Cypress Semiconductor

CY7C106D-10VXI

Cypress Semiconductor

CY7C106D-10VXI by Cypress Semiconductor is a 256KX4 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for parallel memory applications. With 262144 words and 1048576-bit density, it offers common I/O type and 3-STATE output characteristics.

10 ns

COMMON

R-PDSO-J28

e4

18.415 mm

1048576 bit

STANDARD SRAM

4

3

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX4

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.003 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

30

10.16 mm

CY62256LL-70PXC by Cypress Semiconductor

CY62256LL-70PXC

Cypress Semiconductor

CY62256LL-70PXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a rectangular package style.

70 ns

COMMON

R-PDIP-T28

e4

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

5.08 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

40

15.24 mm

CY62256LL-70SNXC by Cypress Semiconductor

CY62256LL-70SNXC

Cypress Semiconductor

CY62256LL-70SNXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY62256LL-70SNXI by Cypress Semiconductor

CY62256LL-70SNXI

Cypress Semiconductor

CY62256LL-70SNXI by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Widely used in industrial applications for its small outline package and parallel interface.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1399B-15VXI by Cypress Semiconductor

CY7C1399B-15VXI

Cypress Semiconductor

CY7C1399B-15VXI by Cypress Semiconductor is a 32KX8 CACHE SRAM with 3.3V supply, 15ns access time, and 3-STATE output. It operates in industrial temperature range and has a small outline package suitable for various parallel applications.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

CACHE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.00002 Amp

2 V

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

7.5 mm

IS62LV256AL-45ULI by Integrated Silicon Solution

IS62LV256AL-45ULI

Integrated Silicon Solution

IS62LV256AL-45ULI by Integrated Silicon Solution is a 32KX8 SRAM with 3.3V supply, 45ns access time, and 32768 words. Ideal for industrial applications requiring fast and reliable memory storage in a small outline package.

45 ns

COMMON

R-PDSO-G28

e3

18.11 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

2.84 mm

.00002 Amp

2 V

SRAMs

12 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

8.405 mm

IDT71256SA12YGI8 by Integrated Device Technology

IDT71256SA12YGI8

Integrated Device Technology

IDT71256SA12YGI8 by Integrated Device Technology is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1399BN-12ZXC by Cypress Semiconductor

CY7C1399BN-12ZXC

Cypress Semiconductor

CY7C1399BN-12ZXC by Cypress Semiconductor is a 32KX8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 12ns access time, and 55mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0005 Amp

3 V

SRAMs

55 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.55 mm

DUAL

30

8 mm

IDT71256SA12YGI by Integrated Device Technology

IDT71256SA12YGI

Integrated Device Technology

IDT71256SA12YGI by Integrated Device Technology is a 32Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and asynchronous operation, suitable for industrial applications requiring fast and reliable memory storage. With 3-state output characteristics and common I/O type, it offers high performance in a compact form factor.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY6264-55SNXI by Cypress Semiconductor

CY6264-55SNXI

Cypress Semiconductor

CY6264-55SNXI by Cypress Semiconductor is an 8KX8 SRAM with a 55ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

55 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

65536 bit

STANDARD SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.03 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

DS1225Y-200IND by Maxim Integrated

DS1225Y-200IND

Maxim Integrated

DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.

200 ns

10 YEAR DATA RETENTION

R-XDMA-P28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

DS1230W-100IND by Maxim Integrated

DS1230W-100IND

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 256KX8;

100 ns

10 YEAR DATA RETENTION

R-PDIP-T28

e0

38.225 mm

2097152 bit

NON-VOLATILE SRAM MODULE

8

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

10.668 mm

.00015 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm