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NON-VOLATILE SRAM MODULE SRAM 33

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
DS1225Y-150-IND by Dallas Semiconductor

DS1225Y-150-IND

Dallas Semiconductor

DS1225Y-150-IND by Dallas Semiconductor is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at 5V, has a max access time of 150ns, and is designed for industrial temperature grades. This rectangular package with 28 terminals in-line is ideal for applications requiring reliable data storage in harsh environments.

150 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1225AD-200-IND by Dallas Semiconductor

DS1225AD-200-IND

Dallas Semiconductor

DS1225AD-200-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and is designed for industrial applications. The package style is in-line with through-hole terminals and a temperature range of -40 to 85°C.

200 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1225AD-70-IND by Dallas Semiconductor

DS1225AD-70-IND

Dallas Semiconductor

DS1225AD-70-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536 bit memory density. It operates at 5V, has a max access time of 70ns, and is designed for industrial applications requiring non-volatile memory storage.

70 ns

R-PDIP-T28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

DS1230Y-70-IND by Dallas Semiconductor

DS1230Y-70-IND

Dallas Semiconductor

DS1230Y-70-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.

70 ns

10 YEARS DATA RETENTION PERIOD

R-PDIP-T28

e0

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1230Y-200-IND by Dallas Semiconductor

DS1230Y-200-IND

Dallas Semiconductor

DS1230Y-200-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 262144-bit memory density. Operating at 5V, it has a max access time of 200ns and can withstand industrial temperatures up to 85°C. Ideal for applications requiring reliable data storage in harsh environments.

200 ns

10 YEARS DATA RETENTION PERIOD

R-PDIP-T28

e0

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1245AB-120-IND by Dallas Semiconductor

DS1245AB-120-IND

Dallas Semiconductor

DS1245AB-120-IND by Dallas Semiconductor is a 128Kx8 Non-Volatile SRAM Module with 120ns access time. Operating at 5V, it has a memory density of 1048576 bits and industrial temperature grade. Suitable for applications requiring reliable data storage in harsh environments.

120 ns

R-PDIP-T32

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1245Y-70-IND by Dallas Semiconductor

DS1245Y-70-IND

Dallas Semiconductor

DS1245Y-70-IND by Dallas Semiconductor is a 128Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.

70 ns

R-PDIP-T32

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

M48Z128-70PM1 by STMicroelectronics

M48Z128-70PM1

STMicroelectronics

M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-70PM1 by STMicroelectronics

M48Z128Y-70PM1

STMicroelectronics

M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

225

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z128Y-85PM1 by STMicroelectronics

M48Z128Y-85PM1

STMicroelectronics

STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.

85 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDMA-P32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

9.52 mm

.004 Amp

SRAMs

105 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

PIN/PEG

2.54 mm

DUAL

15.24 mm

M48Z512AY-70PM1 by STMicroelectronics

M48Z512AY-70PM1

STMicroelectronics

M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512A-70PM1 by STMicroelectronics

M48Z512A-70PM1

STMicroelectronics

M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

70 ns

10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.52 mm

.005 Amp

SRAMs

115 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-200PC1 by STMicroelectronics

M48Z02-200PC1

STMicroelectronics

M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-200PC1 by STMicroelectronics

M48Z12-200PC1

STMicroelectronics

STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z18-100PC1 by STMicroelectronics

M48Z18-100PC1

STMicroelectronics

M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.

100 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1220Y-100-IND by Dallas Semiconductor

DS1220Y-100-IND

Dallas Semiconductor

DS1220Y-100-IND by Dallas Semiconductor is a 2Kx8 Non-Volatile SRAM module with 100ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable memory storage in harsh environments.

100 ns

R-PDIP-T24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.004 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

DS1250Y-70-IND by Dallas Semiconductor

DS1250Y-70-IND

Dallas Semiconductor

DS1250Y-70-IND by Dallas Semiconductor is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in industrial environments.

70 ns

10 YEAR DATA RETENTION PERIOD

R-XDIP-T32

e0

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

YES

UNSPECIFIED

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

M48Z129V-85PM1 by STMicroelectronics

M48Z129V-85PM1

STMicroelectronics

M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

85 ns

R-PDIP-T32

e3

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z512AV-85PM1 by STMicroelectronics

M48Z512AV-85PM1

STMicroelectronics

STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.

85 ns

R-PDIP-T32

e3

42.8 mm

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

BQ4010LYMA-70N by Texas Instruments

BQ4010LYMA-70N

Texas Instruments

BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.

70 ns

R-XDMA-T28

37.72 mm

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

DS38464-070 by Maxim Integrated

DS38464-070

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

70 ns

R-XSMA-N72

e0

2621440 bit

NON-VOLATILE SRAM MODULE

40

1

72

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX40

UNSPECIFIED

SIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

SINGLE

BQ4013LYMA-70N by Texas Instruments

BQ4013LYMA-70N

Texas Instruments

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

70 ns

R-PDMA-P32

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

BQ4015LYMA-70N by Texas Instruments

BQ4015LYMA-70N

Texas Instruments

BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.

70 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

5

Not Qualified

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

BQ4011LYMA-70N by Texas Instruments

BQ4011LYMA-70N

Texas Instruments

BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

R-PDMA-P28

37.72 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

M48Z512BV-85PM1 by STMicroelectronics

M48Z512BV-85PM1

STMicroelectronics

M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.

85 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

DS1258W-100 by Maxim Integrated

DS1258W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

100 ns

R-XDMA-P40

e0

2097152 bit

NON-VOLATILE SRAM MODULE

16

1

40

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

PIN/PEG

DUAL

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.

100 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS2045W-100 by Maxim Integrated

DS2045W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 256; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

100 ns

S-PBGA-B256

27 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

256

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

PARALLEL

NOT SPECIFIED

Not Qualified

8.72 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1.27 mm

BOTTOM

NOT SPECIFIED

27 mm

DS1245ABP-70IND by Maxim Integrated

DS1245ABP-70IND

Maxim Integrated

DS1245ABP-70IND by Maxim Integrated is a 128Kx8 SRAM with 70ns access time, operating at 5V. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular package with 34 terminals.

70 ns

R-XDMA-U34

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

34

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

UNSPECIFIED

MODULE,34LEAD,1.0

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J INVERTED

DUAL

DS1220AD-200IND by Maxim Integrated

DS1220AD-200IND

Maxim Integrated

DS1220AD-200IND by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a max access time of 200ns and industrial temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

200 ns

R-XDMA-P24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

UNSPECIFIED

DIP

DIP24,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

260

5

Not Qualified

.005 Amp

SRAMs

15 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

40

DS1225Y-200IND by Maxim Integrated

DS1225Y-200IND

Maxim Integrated

DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.

200 ns

10 YEAR DATA RETENTION

R-XDMA-P28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

DS1230W-100IND by Maxim Integrated

DS1230W-100IND

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 256KX8;

100 ns

10 YEAR DATA RETENTION

R-PDIP-T28

e0

38.225 mm

2097152 bit

NON-VOLATILE SRAM MODULE

8

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

10.668 mm

.00015 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1270Y-70IND by Maxim Integrated

DS1270Y-70IND

Maxim Integrated

DS1270Y-70IND by Maxim Integrated is a 2MX8 SRAM with 2097152 words, 16777216 bit memory density, and 70 ns max access time. It operates in industrial temperature range (-40 to 85 °C) and is ideal for applications requiring non-volatile memory storage in microelectronic assemblies.

70 ns

5 YEAR DATA RETENTION

R-PDMA-P36

e0

16777216 bit

NON-VOLATILE SRAM MODULE

8

1

36

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

DUAL