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INDUSTRIAL EEPROM 598

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M24256-BFMB6TG by STMicroelectronics

M24256-BFMB6TG

STMicroelectronics

STMicroelectronics' M24256-BFMB6TG is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in industrial temperature range (-40 to 85 °C) and uses I2C serial bus for control, suitable for applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

262144 bit

EEPROM

8

1

8

32768 words

32K

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8/5

Not Qualified

I2C

.000001 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.5 mm

DUAL

HARDWARE

M24256-DRDW6TP by STMicroelectronics

M24256-DRDW6TP

STMicroelectronics

STMicroelectronics M24256-DRDW6TP is an EEPROM with 32KX8 organization, operating at 2.5V, and featuring I2C control byte for hardware write protection. It has a memory density of 262144 bit, endurance of 4M cycles, and operates in industrial temperature range. Ideal for applications requiring reliable non-volatile memory storage with serial bus interface.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

M24256-DRMN6TP by STMicroelectronics

M24256-DRMN6TP

STMicroelectronics

STMicroelectronics M24256-DRMN6TP is an EEPROM with 32KX8 organization, operating at 2.5V, and offering 4000000 write/erase cycles. It has a serial interface using I2C control byte for industrial applications requiring reliable non-volatile memory storage in a small outline package.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

HARDWARE

M95512-DRMB6TG by STMicroelectronics

M95512-DRMB6TG

STMicroelectronics

STMicroelectronics M95512-DRMB6TG is an EEPROM with 64KX8 organization, SPI serial bus type, and 524288-bit memory density. It operates b/w -40 to 85 °C and has a min data retention time of 40s. Ideal for industrial applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

R-PDSO-N8

e4

524288 bit

EEPROM

8

1

8

65536 words

64K

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

SPI

.000005 Amp

EEPROMs

8 mA

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

HARDWARE/SOFTWARE

M24512-DRDW6TP by STMicroelectronics

M24512-DRDW6TP

STMicroelectronics

STMicroelectronics M24512-DRDW6TP is an EEPROM with 64KX8 organization, operating at 2/5V. It features I2C control byte, hardware write protection, and 1MHz clock frequency. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.4 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24512-DRMB6TG by STMicroelectronics

M24512-DRMB6TG

STMicroelectronics

STMicroelectronics M24512-DRMB6TG is an EEPROM with 64KX8 organization, operating at 2.5V, and featuring I2C control byte 1010MMMR. It has a small outline package style suitable for industrial temperature grades applications. With endurance of 1M cycles, it offers reliable data storage in various electronic devices.

1 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24512-DRMN6TP by STMicroelectronics

M24512-DRMN6TP

STMicroelectronics

STMicroelectronics M24512-DRMN6TP is a 64KX8 EEPROM with I2C control, operating at 1 MHz. It has a memory density of 524288 bit and can endure 4M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M24512-RMB6TG by STMicroelectronics

M24512-RMB6TG

STMicroelectronics

M24512-RMB6TG by STMicroelectronics is an EEPROM with 64KX8 organization, I2C control byte 1010MMMR, and 1 MHz max clock frequency. It is used in industrial applications for data storage due to its 1000000 write/erase cycles endurance and serial bus type I2C interface.

1 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24512-RMC6TG by STMicroelectronics

M24512-RMC6TG

STMicroelectronics

M24512-RMC6TG by STMicroelectronics is a 64KX8 EEPROM with a memory density of 524288 bit. It operates in synchronous mode at a max clock frequency of 1 MHz and has a small outline package shape suitable for industrial applications.

1 MHz

R-PDSO-N8

3 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

5

.6 mm

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

24FC64F-I/ST by Microchip Technology

24FC64F-I/ST

Microchip Technology

24FC64F-I/ST by Microchip Technology is an EEPROM with 8KX8 organization, operating at 1 MHz. It features a max temperature of 85°C and endurance of 1M Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

M24256-BFCS6TP/K by STMicroelectronics

M24256-BFCS6TP/K

STMicroelectronics

STMicroelectronics M24256-BFCS6TP/K is a 32KX8 EEPROM with 1.8V nominal voltage, operating in synchronous mode at up to 1MHz clock frequency. It features I2C control byte for hardware write protection and offers 4000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PBGA-B8

1.358 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

VFBGA

BGA8,3X5,14/8

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

1.8/5

Not Qualified

.58 mm

I2C

.000001 Amp

EEPROMs

2.5 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

1.271 mm

5 ms

HARDWARE

CAT24C02HU4IGT3A by Onsemi

CAT24C02HU4IGT3A

Onsemi

CAT24C02HU4IGT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers 1000000 write/erase cycles, I2C serial bus type, and a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

CAT24C02VP2IGT3A by Onsemi

CAT24C02VP2IGT3A

Onsemi

CAT24C02VP2IGT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.8 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

CAT24C04C5ATR by Onsemi

CAT24C04C5ATR

Onsemi

CAT24C04C5ATR by Onsemi is a 4Kx1 EEPROM with I2C control byte. It operates at 3.3V, has 4096-bit memory density, and supports up to 0.4 MHz clock frequency. Ideal for industrial applications requiring low power consumption and high endurance with 1000000 write/erase cycles.

.4 MHz

100

1000000 Write/Erase Cycles

1010000R

R-PBGA-B5

e1

.86 mm

4096 bit

EEPROM

1

1

1

5

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX1

PLASTIC/EPOXY

VFBGA

BGA5,3X3,10/6

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

.39 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.3 mm

BOTTOM

NOT SPECIFIED

.84 mm

5 ms

HARDWARE

CAT24C512ZI-T3 by Onsemi

CAT24C512ZI-T3

Onsemi

CAT24C512ZI-T3 by Onsemi is a 64KX8 EEPROM with 524288 bit memory density. It operates at 0.4 MHz clock frequency and has 1000000 Write/Erase Cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NO

1.1 mm

I2C

.000002 Amp

2.5 mA

5.5 V

1.8 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M95512-RCS6TP/K by STMicroelectronics

M95512-RCS6TP/K

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 5.5 V;

5 MHz

R-PBGA-B8

1.937 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.58 mm

SPI

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

NOT SPECIFIED

1.271 mm

M95512-RMC6TG by STMicroelectronics

M95512-RMC6TG

STMicroelectronics

STMicroelectronics M95512-RMC6TG is a 64KX8 EEPROM with SPI interface, operating at 5 MHz. It has 1000000 Write/Erase Cycles endurance and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring low power consumption and high reliability.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000003 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

HARDWARE/SOFTWARE

M95020-RMC6TG by STMicroelectronics

M95020-RMC6TG

STMicroelectronics

STMicroelectronics M95020-RMC6TG is a 2Kx1 EEPROM with SPI serial bus, 2048-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C for industrial applications, with a max clock frequency of 5 MHz. The package is small outline rectangular, suitable for surface mount assembly.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

2048 bit

EEPROM

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE/SOFTWARE

BR24G1M-3A by ROHM

BR24G1M-3A

ROHM

ROHM's BR24G1M-3A is an 8-terminal EEPROM with 128Kx8 organization, operating at 1MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1048576 bits and endurance of 1000000 write/erase cycles.

ROHM-S-A0000225889 REF SEATED HTCONSIDER

1 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

9.3 mm

1048576 bit

EEPROM

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

3.7 mm

I2C

.000003 Amp

EEPROMs

4.5 mA

5.5 V

1.7 V

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24LR04E-RUW20/2 by STMicroelectronics

M24LR04E-RUW20/2

STMicroelectronics

STMicroelectronics M24LR04E-RUW20/2 is a 4096-bit EEPROM with I2C serial bus, operating at 2.5V, -40 to 85 °C temp range. Suitable for industrial applications, it offers synchronous operation, 128x32 organization, and a max clock frequency of 0.4 MHz.

8

.4 MHz

X-XUUC-N

4096 bit

EEPROM

32

1

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

SERIAL

I2C

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

5 ms

25AA02E64T-I/SN by Microchip Technology

25AA02E64T-I/SN

Microchip Technology

25AA02E64T-I/SN by Microchip Technology is a serial EEPROM with 256x8 organization, SPI interface, and 10 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and has a max supply voltage of 5.5V. Ideal for applications requiring reliable non-volatile memory storage with high endurance of 1M write/erase cycles.

ALSO OPERATES AT 2.5V TO 5.5V @5MHZ AND 1.8V TO 2.5V @3MHZ

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

5

Not Qualified

TS 16949

1.75 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24AA256UID-I/P by Microchip Technology

24AA256UID-I/P

Microchip Technology

24AA256UID-I/P by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V and -40 to 85 °C temperature range. It features I2C control byte 1010DDDR, serial interface, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

1.27 mm

DUAL

7.62 mm

5 ms

93AA46CT-I/MNY by Microchip Technology

93AA46CT-I/MNY

Microchip Technology

93AA46CT-I/MNY by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 5V. It features serial interface, software write protection, and industrial temperature grade. Ideal for applications requiring small outline package, such as automotive electronics and industrial controls.

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

YES

NO

TS 16949

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

SOFTWARE

CAT93C46RVI-G by Onsemi

CAT93C46RVI-G

Onsemi

CAT93C46RVI-G by Onsemi is a 1024-bit EEPROM with 64x16 organization, operating at up to 2MHz clock frequency. It has a supply voltage range of 1.8V to 5.5V and operates in industrial temperature grade. Ideal for applications requiring small outline package, serial communication via Microwire, and low power consumption.

8

2 MHz

R-PDSO-G8

e4

4.9 mm

1024 bit

EEPROM

16

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

MICROWIRE

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

CAT93C76VI-G by Onsemi

CAT93C76VI-G

Onsemi

CAT93C76VI-G by Onsemi is a 8192-bit EEPROM with 512x16 organization, operating at 1MHz clock frequency. It has a serial bus type of MICROWIRE and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring small outline package and low power consumption.

8

1 MHz

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

16

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X16

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

MICROWIRE

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

3.9 mm

25AA1024-I/P by Microchip Technology

25AA1024-I/P

Microchip Technology

25AA1024-I/P by Microchip Technology is a 1MX1 EEPROM with 20 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 1000000 write/erase cycles endurance, and uses hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage.

OPERTAES WITH 2.5VMIN @ 10MHZ

20 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

8388608 bit

EEPROM

8

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

AEC-Q100

5.334 mm

SPI

.000012 Amp

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

6 ms

HARDWARE/SOFTWARE

AT28C16-20JI by Atmel

AT28C16-20JI

Atmel

Atmel's AT28C16-20JI is a 2Kx8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 200ns and features an industrial temperature grade. Widely used in applications requiring non-volatile memory storage, this chip carrier package has a rectangular shape and supports asynchronous operation.

200 ns

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

NO

YES

10

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

16384 bit

EEPROM

8

2

1

32

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.55 mm

.0001 Amp

EEPROMs

45 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

NO

11.43 mm

1 ms

AT28LV256-25PI by Atmel

AT28LV256-25PI

Atmel

AT28LV256-25PI by Atmel is a 32Kx8 EEPROM with a supply voltage of 3.3V, operating temperature range of -40 to 85°C, and endurance of 10,000 write/erase cycles. It is commonly used in industrial applications for storing data reliably.

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00005 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

M24C16-WBN6 by STMicroelectronics

M24C16-WBN6

STMicroelectronics

STMicroelectronics M24C16-WBN6 is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte for synchronous operation and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e0

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-BN6 by STMicroelectronics

M24C16-BN6

STMicroelectronics

STMicroelectronics M24C16-BN6 is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e0

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-WMN6T by STMicroelectronics

M24C16-WMN6T

STMicroelectronics

M24C16-WMN6T by STMicroelectronics is a 2Kx8 EEPROM with I2C control byte 1010MMMR. It operates at 5V, has 1000000 write/erase cycles, and supports a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C16-WMN6 by STMicroelectronics

M24C16-WMN6

STMicroelectronics

The STMicroelectronics M24C16-WMN6 is an EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C16-MN6 by STMicroelectronics

M24C16-MN6

STMicroelectronics

The STMicroelectronics M24C16-MN6 is an EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C08-WBN6 by STMicroelectronics

M24C08-WBN6

STMicroelectronics

M24C08-WBN6 by STMicroelectronics is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles endurance. It operates in synchronous mode with a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e0

9.27 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C08-WMN6T by STMicroelectronics

M24C08-WMN6T

STMicroelectronics

STMicroelectronics M24C08-WMN6T is a 1Kx8 EEPROM with I2C serial bus, 8192-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.4 MHz, and is used in industrial applications for hardware write protection.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C08-WMN6 by STMicroelectronics

M24C08-WMN6

STMicroelectronics

STMicroelectronics M24C08-WMN6 is an EEPROM with 1KX8 organization, operating at 5V. It offers 1000000 Write/Erase cycles, I2C serial bus type, and a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

TH58NVG5S0FTAK0 by Toshiba

TH58NVG5S0FTAK0

Toshiba

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

LE24163LBXA-SH by Onsemi

LE24163LBXA-SH

Onsemi

LE24163LBXA-SH by Onsemi is a 2KX8 EEPROM with 16384 bit memory density. It operates at 2.5V, has a clock frequency of 0.4 MHz, and supports industrial temperature grade. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact devices.

FOR WRITE OPERATION-1.8V TO 3.6V SUPPLY

.4 MHz

R-PBGA-B5

e1

1.2 mm

16384 bit

EEPROM

8

1

1

5

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

3

.33 mm

3.6 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

30

.8 mm

5 ms

24AA044-I/P by Microchip Technology

24AA044-I/P

Microchip Technology

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

1.7V TO 1.8V @ 0.1MHz AND 1.8V TO 2.2V @ 0.4MHz

1 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2.5

TS 16949

5.334 mm

I2C

.000001 Amp

3 mA

5.5 V

2.2 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

1.27 mm

DUAL

7.62 mm

5 ms

EPC1064LI20 by Altera

EPC1064LI20

Altera

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 5.5 V;

4 WIRE INTERFACE TO FLEX 8000 DEVICES

4 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

220

5

Not Qualified

4.572 mm

OTP ROMs

5.5 V

4.5 V

5

YES

MOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

8.9662 mm

AT28C256-15PI by Atmel

AT28C256-15PI

Atmel

AT28C256-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and endurance of 262144 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

240

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256F-15PI by Atmel

AT28C256F-15PI

Atmel

AT28C256F-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. It operates at 5V, has a page size of 64 words, and offers a max access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms

AT28HC256-70PI by Atmel

AT28HC256-70PI

Atmel

AT28HC256-70PI by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It features a max access time of 70ns and can endure up to 10,000 Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256E-12PI by Atmel

AT28HC256E-12PI

Atmel

Atmel's AT28HC256E-12PI is a 32Kx8 EEPROM with 100,000 Write/Erase Cycles. Operating at 5V, it offers 120ns Access Time and supports Asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28C256-15JI by Atmel

AT28C256-15JI

Atmel

AT28C256-15JI by Atmel is a 32Kx8 EEPROM chip with 3-STATE output, operating at 5V. It offers industrial-grade temperature range (-40 to 85°C) and supports asynchronous operation. Ideal for applications requiring reliable non-volatile memory storage with fast access times (150ns).

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

3.556 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

11.43 mm

10 ms

AT28HC256-12JI by Atmel

AT28HC256-12JI

Atmel

AT28HC256-12JI by Atmel is a 32Kx8 EEPROM chip with 3-STATE output, operating at 5V. It features asynchronous mode, industrial temperature grade, and 10000 write/erase cycles endurance. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

120 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

3.556 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

11.43 mm

10 ms

AT28C040-20LI by Atmel

AT28C040-20LI

Atmel

AT28C040-20LI by Atmel is a 512Kx8 EEPROM with 3-STATE output, operating at 5V. It features a fast access time of 200ns and supports asynchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

200 ns

AUTOMATIC WRITE

NO

YES

S-CQCC-N44

e0

16.55 mm

4194304 bit

EEPROM

8

1

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC44,.65SQ

SQUARE

CHIP CARRIER

256

PARALLEL

5

5

Not Qualified

2.74 mm

.003 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

NO LEAD

1.27 mm

QUAD

YES

16.55 mm

10 ms

93C46BX-I/SN by Microchip Technology

93C46BX-I/SN

Microchip Technology

93C46BX-I/SN by Microchip Technology is a serial EEPROM with a memory density of 1024 bit. It operates at a max clock frequency of 3 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in industrial applications for data storage and retrieval.

1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

6 ms

SOFTWARE