Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT47H64M8SH-25EAIT:H
Micron Technology
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
FOUR BANK PAGE BURST
AUTO/SELF REFRESH
400 MHz
COMMON
4,8
R-PBGA-B60
10 mm
536870912 bit
DDR2 DRAM
8
1
60
67108864 words
64M
SYNCHRONOUS
85 Cel
-40 Cel
64MX8
3-STATE
PLASTIC/EPOXY
TFBGA
BGA60,9X11,32
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
NOT SPECIFIED
8192
AEC-Q100
1.2 mm
YES
.01 Amp
150 mA
1.9 V
1.7 V
1.8
CMOS
INDUSTRIAL
BALL
.8 mm
BOTTOM
8 mm
W972GG6KB25I
Winbond Electronics
Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.
MULTI BANK PAGE BURST
.4 ns
R-PBGA-B84
12.5 mm
2147483648 bit
16
84
134217728 words
128M
95 Cel
128MX16
BGA84,9X15,32
.05 Amp
220 mA
MT48LC32M8A2P-7E:G
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
5.4 ns
143 MHz
1,2,4,8
R-PDSO-G54
22.22 mm
268435456 bit
SYNCHRONOUS DRAM
54
33554432 words
32M
70 Cel
0 Cel
32MX8
TSOP2
TSOP54,.46,32
SMALL OUTLINE, THIN PROFILE
3.3
Not Qualified
1,2,4,8,FP
.0025 Amp
DRAMs
3.6 V
3 V
COMMERCIAL
GULL WING
DUAL
10.16 mm
AS4C512M16D3L-12BCN
Alliance Memory
Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
.225 ns
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
800 MHz
R-PBGA-B96
e1
14 mm
8589934592 bit
DDR3L DRAM
3
96
536870912 words
512M
512MX16
BGA96,9X16,32
1.35
.011 Amp
1.45 V
1.283 V
OTHER
Tin/Silver/Copper (Sn/Ag/Cu)
9 mm
AS4C512M16D3L-12BIN
Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT8HTF12864AZ-667H1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
SINGLE BANK PAGE BURST
.45 ns
AUTO/SELF REFRESH; WD-MAX
333 MHz
R-XDMA-N240
133.35 mm
DDR DRAM MODULE
64
240
128MX64
UNSPECIFIED
DIMM
DIMM240,40
MICROELECTRONIC ASSEMBLY
30.5 mm
1480 mA
NO
NO LEAD
1 mm
2.7 mm
MT8JTF12864AZ-1G4G1
667 MHz
1.5
.096 Amp
3920 mA
1.575 V
1.425 V
MT40A2G4TRF-093E:A
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Form: BALL;
1067.2 MHz
R-PBGA-B78
11.5 mm
DDR4 DRAM
4
78
2147483648 words
2G
2GX4
BGA78,6X13,32
.055 Amp
70 mA
1.26 V
1.14 V
1.2
9.5 mm
MT41K512M8DA-107AIT:P
Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.
934.57 MHz
10.5 mm
4294967296 bit
512MX8
BGA78,9X13,32
260
146 mA
TIN SILVER COPPER
30
MT8KTF25664HZ-1G4M1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
R-XZMA-N204
67.6 mm
17179869184 bit
204
268435456 words
256M
256MX64
DIMM204,24
30.15 mm
1640 mA
.6 mm
ZIG-ZAG
3.8 mm
MT47H512M4THN-25E:H
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
DUAL BANK PAGE BURST
R-PBGA-B63
63
512MX4
BGA63,9X11,32
.014 Amp
217 mA
MT40A1G8WE-075E:B
Micron Technology's MT40A1G8WE-075E:B is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
1333.33 MHz
12 mm
1073741824 words
1G
1GX8
.046 Amp
63 mA
MT40A1G8WE-075EAIT:B
Micron Technology's MT40A1G8WE-075EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1333 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40 to 95 °C), it offers reliable performance in demanding environments.
1333 MHz
.025 Amp
182 mA
MT40A2G4WE-075E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
.041 Amp
58 mA
MT40A512M16JY-075E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
BGA96,6X16,32
105 mA
MT8KTF25664HZ-1G6K1
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX
1248 mA
MT40A1G8WE-083EAAT:B
Micron Technology's MT40A1G8WE-083EAAT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40°C to 105°C), it offers reliable performance in demanding environments.
1200 MHz
105 Cel
.027 Amp
184 mA
MT40A512M16JY-075EAIT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;
262 mA
MT40A512M16JY-083EAAT:B
Micron Technology's MT40A512M16JY-083EAAT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features a thin profile grid array package and operates in synchronous mode with self-refresh capability. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial systems.
.028 Amp
254 mA
MT40A512M16JY-083EAIT:B
Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
252 mA
MT48LC16M16A2P-6AXIT:G
Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
167 MHz
e3
16777216 words
16M
16MX16
100 mA
Matte Tin (Sn)
MT40A1G8WE-083EAIT:B
Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
MT40A1G8WE-083EAUT:B
Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
125 Cel
.042 Amp
192 mA
MT40A512M16JY-083EAUT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 14 mm;
273 mA
IS43TR16512BL-125KBLI-TR
Integrated Silicon Solution
IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.
95 mA
10
IS43TR16128DL-107MBL
IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
934.58 MHz
13 mm
.016 Amp
216 mA
MT41K512M16VRN-107AIT:P
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
.022 Amp
304 mA
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
1600 MHz
1GX16
MT4VDDT1664HY-335K1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
.7 ns
R-XDMA-N200
1073741824 bit
200
16MX64
DIMM200,24
2.5
31.9 mm
1080 mA
2.7 V
2.3 V
2.45 mm
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
13.5 mm
.06 Amp
470 mA
AS4C512M8D4-83BCN
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
10.6 mm
.04 Amp
187 mA
7.5 mm
MT40A1G8SA-062EAAT:E
Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
11 mm
.02 Amp
195 mA
MT40A256M16LY-062E:FTR
MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
256MX16
.003 Amp
312 mA
AS4C16M16SA-7TCNTR
AS4C16M16SA-7TCNTR by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for applications requiring high-speed memory access in compact spaces due to its small outline and thin profile package style.
55 mA
AS4C1G8MD3L-12BCNTR
Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
13.2 mm
125 mA
AS4C512M16D3L-12BCNTR
Alliance Memory's AS4C512M16D3L-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a thin profile grid array package suitable for applications requiring high-speed memory access and low power consumption.
185 mA
AS4C512M16D3L-12BINTR
Alliance Memory's AS4C512M16D3L-12BINTR is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, suitable for industrial applications. Features include 1.35V nominal voltage, 95°C max operating temp, and multi-bank page burst access mode. Ideal for high-performance systems requiring low power consumption and fast data processing.
AS4C64M16D2A-25BCNTR
Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
64MX16
170 mA
AS4C32M16SB-7BINTR
Alliance Memory's AS4C32M16SB-7BINTR is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
COMMON/SEPARATE
S-PBGA-B54
32MX16
BGA54,9X9,32
SQUARE
.008 Amp
120 mA
AS4C32M16SB-7BIN
Alliance Memory's AS4C32M16SB-7BIN is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A2G8VA-062E:B
Micron Technology's MT40A2G8VA-062E:B is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data processing in devices like servers and high-performance computers.
2GX8
MT40A4G4VA-062E:B
Micron Technology's MT40A4G4VA-062E:B is a DDR4 DRAM with 4GX4 organization, operating at 1600 MHz. It features a thin profile grid array package with 78 terminals and operates synchronously. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
4294967296 words
4G
4GX4
MT40A8G4BAF-062E:B
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;
34359738368 bit
8589934592 words
8G
8GX4
BGA78,9X11,32
277 mA
MT40A4G8BAF-062E:B
Micron Technology's MT40A4G8BAF-062E:B is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a density of 34359738368 bits.
4GX8
245 mA
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
275 mA
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
MT40A4G4JC-062E:E
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