Loading...

VFBGA DRAM 424

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
W631GG6NB-09 by Winbond Electronics

W631GG6NB-09

Winbond Electronics

Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.05 Amp

270 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB09I by Winbond Electronics

W631GU6NB09I

Winbond Electronics

Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.06 Amp

270 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB-09 by Winbond Electronics

W631GU6NB-09

Winbond Electronics

The Winbond Electronics W631GU6NB-09 is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as laptops, tablets, and networking equipment.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.06 Amp

270 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB11I by Winbond Electronics

W631GU6NB11I

Winbond Electronics

Winbond Electronics' W631GU6NB11I is a DDR3L DRAM with 64MX16 organization, operating at up to 933 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

20 ns

933 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.055 Amp

240 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB-12 by Winbond Electronics

W631GU6NB-12

Winbond Electronics

W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.055 Amp

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB12I by Winbond Electronics

W631GU6NB12I

Winbond Electronics

W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.055 Amp

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

MT53E384M32D2DS-046AIT:E by Micron Technology

MT53E384M32D2DS-046AIT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

95 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-046AIT:E by Micron Technology

MT53E768M32D4DT-046AIT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-053AUT:E by Micron Technology

MT53E768M32D4DT-053AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

125 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2DS-053AUT:E by Micron Technology

MT53E384M32D2DS-053AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.06 V;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

125 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2DS-046AAT:E by Micron Technology

MT53E384M32D2DS-046AAT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 384M;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

105 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2DS-046AUT:E by Micron Technology

MT53E384M32D2DS-046AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 12884901888 bit;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

125 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-046AUT:E by Micron Technology

MT53E768M32D4DT-046AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

125 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53D1024M32D4DT-053WT:D by Micron Technology

MT53D1024M32D4DT-053WT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-053WT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 1869.1 MHz clock frequency. It features dual bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX

1869.1 MHz

COMMON

16,32

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

85 Cel

-25 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046WT:D by Micron Technology

MT53D512M32D2DS-046WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features single bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B1024M32D4NQ-053WT:C by Micron Technology

MT53B1024M32D4NQ-053WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: .95 mm; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

DDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

85 Cel

-30 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062WT:C by Micron Technology

MT53B256M32D1NP-062WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Minimum Supply Voltage (Vsup): 1.06 V;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

DDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

30

10 mm

MT53B512M32D2NP-053WT:C by Micron Technology

MT53B512M32D2NP-053WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 512M; Maximum Clock Frequency (fCLK): 1866 MHz;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

DDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-053WT:C by Micron Technology

MT53B256M32D1NP-053WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Length: 14.5 mm;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

DDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT48LC4M32B2B5-6A:LTR by Micron Technology

MT48LC4M32B2B5-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

180 mA

3.6 V

3 V

3.3

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT53D1024M32D4DT-046AIT:D by Micron Technology

MT53D1024M32D4DT-046AIT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046AUT:D by Micron Technology

MT53D512M32D2DS-046AUT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AUT:D is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046AIT:D by Micron Technology

MT53D512M32D2DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D1024M32D4DT-046AUT:D by Micron Technology

MT53D1024M32D4DT-046AUT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AUT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory in automotive electronics.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046AAT:D by Micron Technology

MT53D512M32D2DS-046AAT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a wide temperature range from -40 to 105°C.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT60B1G16HC-48B:A by Micron Technology

MT60B1G16HC-48B:A

Micron Technology

Micron Technology's MT60B1G16HC-48B:A is a DDR5 DRAM with 1GX16 organization, operating at 2403.8 MHz clock frequency. It features 8192 refresh cycles and supports multi-bank page burst access mode. This memory module is suitable for high-performance applications requiring fast synchronous operation in a compact grid array package.

MULTI BANK PAGE BURST

SELF REFRESH

2403.8 MHz

COMMON

R-PBGA-B102

14 mm

17179869184 bit

DDR5 DRAM

16

1

1

102

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA102,9X17,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

1 mm

YES

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT53E128M16D1DS-046WT:A by Micron Technology

MT53E128M16D1DS-046WT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 128M; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2NP-062AAT:C by Micron Technology

MT53B512M32D2NP-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2NP-062AIT:C by Micron Technology

MT53B512M32D2NP-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1DS-062AIT:C by Micron Technology

MT53B256M32D1DS-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AAT:C by Micron Technology

MT53B256M32D1NP-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AIT:C by Micron Technology

MT53B256M32D1NP-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1536M32D4DT-046AIT:A by Micron Technology

MT53E1536M32D4DT-046AIT:A

Micron Technology

Micron Technology's MT53E1536M32D4DT-046AIT:A is a LPDDR4 DRAM with 1536MX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

95 Cel

-40 Cel

1536MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2DS-046AUT:B by Micron Technology

MT53E256M32D2DS-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2DS-046AIT:B by Micron Technology

MT53E256M32D2DS-046AIT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AIT:B is a 256MX32 LPDDR4 DRAM with a max clock frequency of 2133 MHz. It operates in synchronous mode, has a self-refresh feature, and is commonly used in automotive applications due to its AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M16D1DS-046AIT:B by Micron Technology

MT53E256M16D1DS-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Pitch: .8 mm;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

16

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-053WT:E by Micron Technology

MT53E768M32D4DT-053WT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-053WT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed and low-power memory solutions.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

85 Cel

-25 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M64D4NK-046WT:D by Micron Technology

MT53E512M64D4NK-046WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 366; Package Code: VFBGA; Package Shape: SQUARE; Maximum Supply Current: 360 mA; Additional Features: SELF REFRESH; IT ALSO REQUIRES 1.8V NOM;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

360 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm

MT53E512M64D4NK-053WT:D by Micron Technology

MT53E512M64D4NK-053WT:D

Micron Technology

Micron Technology's MT53E512M64D4NK-053WT:D is a LPDDR4 DRAM with 512MX64 organization, operating at 1866 MHz. It features a very thin profile, fine pitch grid array package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact devices.

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

300 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm

MT53E256M32D1KS-046AAT:L by Micron Technology

MT53E256M32D1KS-046AAT:L

Micron Technology

Micron Technology's MT53E256M32D1KS-046AAT:L is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 and ISO 26262 screening levels.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32768

AEC-Q100, ISO 26262

.95 mm

YES

16,32

.0009 Amp

42.3 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm