Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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EDB2432B4MA-1DAAT-F-D
Micron Technology
LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .65 mm; Technology: CMOS;
SINGLE BANK PAGE BURST
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
R-PBGA-B134
11.5 mm
2147483648 bit
LPDDR2 DRAM
32
1
134
67108864 words
64M
SYNCHRONOUS
64MX32
PLASTIC/EPOXY
VFBGA
RECTANGULAR
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
NOT SPECIFIED
1 mm
YES
1.3 V
1.14 V
1.2
CMOS
BALL
.65 mm
BOTTOM
10 mm
EDB2432B4MA-1DAAT-F-RTR
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 10 mm;
SELF REFRESH
1073741824 bit
33554432 words
32M
105 Cel
-40 Cel
32MX32
1.95 V
1.7 V
1.8
INDUSTRIAL
EDB2432B4MA-1DAUT-F-D
LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
125 Cel
AUTOMOTIVE
EDB2432B4MA-1DAUT-F-RTR
LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;
EDF8132A3MA-GD-F-D
LPDDR3 DRAM; No. of Terminals: 178; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Package Body Material: PLASTIC/EPOXY;
DUAL BANK PAGE BURST
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; IT ALSO HAVE 0.65 MM PITCH
R-PBGA-B178
8589934592 bit
LPDDR3 DRAM
178
268435456 words
256M
256MX32
.85 mm
.8 mm
10.5 mm
EDFA232A2MA-GD-F-D
LPDDR3 DRAM; No. of Terminals: 178; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: SYNCHRONOUS;
17179869184 bit
536870912 words
512M
512MX32
EDFA232A2MA-JD-F-D
LPDDR3 DRAM; No. of Terminals: 178; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 536870912 words; Surface Mount: YES;
AS4C16M32MS-7BCN
Alliance Memory
Alliance Memory's AS4C16M32MS-7BCN is a 16MX32 Synchronous DRAM with 536870912-bit memory density. Operating at 1.8V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed data storage in compact devices like smartphones and tablets.
FOUR BANK PAGE BURST
5.4 ns
AUTO/SELF REFRESH
R-PBGA-B90
13 mm
536870912 bit
SYNCHRONOUS DRAM
90
16777216 words
16M
85 Cel
-25 Cel
16MX32
OTHER
8 mm
AS4C256M16D3A-12BIN
Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
MULTI BANK PAGE BURST
R-PBGA-B96
4294967296 bit
DDR3 DRAM
16
3
96
256MX16
1.575 V
1.425 V
1.5
9 mm
MT52L256M64D2GN-107WT:B
LPDDR3 DRAM; No. of Terminals: 256; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V; Terminal Finish: TIN SILVER COPPER;
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
S-PBGA-B256
e1
14 mm
64
256
256MX64
SQUARE
.7 mm
TIN SILVER COPPER
.4 mm
EDB8132B4PM-1DAT-F-D
LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Maximum Seated Height: .82 mm;
S-PBGA-B168
12 mm
168
260
.82 mm
Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)
.5 mm
30
MT52L256M64D2LZ-107XT:B
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;
933 MHz
COMMON
S-PBGA-B216
216
-30 Cel
3-STATE
BGA216,29X29,16
.012 Amp
320 mA
EDF8164A3MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;
S-PBGA-B253
11 mm
253
134217728 words
128M
128MX64
EDFA164A2MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Length: 11 mm;
EDFA164A2MA-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V;
EDFA364A3MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;
12.5 mm
EDFB164A1MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;
34359738368 bit
512MX64
.95 mm
EDFB164A1MA-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;
EDFP164A3PD-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 256; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 384M;
25769803776 bit
402653184 words
384M
384MX64
W631GU6MB12I
Winbond Electronics
The Winbond Electronics W631GU6MB12I is a DDR3L DRAM with 64MX16 organization, 67108864 words, and 1073741824 bit memory density. It operates synchronously at temperatures ranging from -40 to 95 °C and features self-refresh capability. Ideal for industrial applications requiring high-speed, low-power memory solutions.
DDR3L DRAM
95 Cel
64MX16
1.45 V
1.283 V
1.35
7.5 mm
MT53B512M32D2DS-062AAT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1600 MHz;
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
1600 MHz
16,32
R-PBGA-B200
14.5 mm
LPDDR4 DRAM
200
BGA200,12X22,32/25
16384
.0033 Amp
410 mA
1.17 V
1.06 V
1.1
MT53B256M32D1NP-062AUT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Organization: 256MX32;
.005 Amp
445 mA
MT53B512M32D2DS-062AIT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel;
.0025 Amp
400 mA
MT53B256M32D1DS-062AUT:C
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
MT53B256M32D1DS-062AAT:C
Micron Technology's MT53B256M32D1DS-062AAT:C is a LPDDR4 DRAM with 256MX32 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT48LC8M16A2B4-6AXIT:L
Micron Technology's MT48LC8M16A2B4-6AXIT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers a max access time of 5.4 ns. Ideal for industrial applications requiring high-speed and reliable memory performance.
S-PBGA-B54
134217728 bit
54
8388608 words
8M
8MX16
3.6 V
3 V
3.3
Tin/Silver/Copper (Sn/Ag/Cu)
MT48LC4M16A2B4-75IT:GTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 3 V;
67108864 bit
4194304 words
4M
4MX16
MT48LC16M16A2F4-6A:GTR
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;
AUTO REFRESH
268435456 bit
70 Cel
0 Cel
16MX16
COMMERCIAL
MT48LC16M16A2F4-6AIT:GTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: 1 mm;
MT53D1024M32D4DT-046AAT:D
Micron Technology's MT53D1024M32D4DT-046AAT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or mobile devices.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
2136.7 MHz
1073741824 words
1G
1GX32
AEC-Q100
MT53E256M32D2DS-046AAT:B
Micron Technology's MT53E256M32D2DS-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
2133 MHz
MT53E768M32D4DT-046AAT:E
Micron Technology's MT53E768M32D4DT-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features a very thin profile, fine pitch package style and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V.
805306368 words
768M
768MX32
BGA200,12X20,32/25
MT53E768M32D4DT-053AAT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 805306368 words;
1866 MHz
MT53B1024M32D4NQ-062WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS; No. of Words: 1073741824 words;
DDR4 DRAM
MT53B512M32D2NP-062WT:C
Micron Technology's MT53B512M32D2NP-062WT:C is a DDR4 DRAM with 512MX32 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a max clock frequency of 1600 MHz.
MT52L256M64D2PP-107WT:B
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64;
CONFIGURABLE
BGA216,12X12,16
NO
MT53E768M32D4DT-053AIT:E
Micron Technology's MT53E768M32D4DT-053AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style, common I/O type, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V supply voltage.
IS43LQ16128A-062BLI
Integrated Silicon Solution
IS43LQ16128A-062BLI by Integrated Silicon Solution is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency. It operates in synchronous mode, has a memory density of 2147483648 bit, and supports multi-bank page burst access. Ideal for industrial applications requiring high-speed data processing and low power consumption.
terminal pitch-max
128MX16
W66CP2NQUAFJ
Winbond Electronics' W66CP2NQUAFJ is a 128MX32 LPDDR4 DRAM with 134,217,728 words and 4294967296 bit memory density. Operating at up to 1600 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX
128MX32
W66CP2NQUAGJ
Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.
1869.1 MHz
W66CP2NQUAHJ
Winbond Electronics LPDDR4 DRAM W66CP2NQUAHJ features 128MX32 organization, operates at up to 2136.7 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices with limited space constraints.
AS4C128M16MD4-062BAN
Alliance Memory's AS4C128M16MD4-062BAN is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency, 1.1V supply voltage, and -40 to 105°C operating temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
MT53B128M32D1DS-062AUT:A
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
8192
MT53B128M32D1DS-062AAT:A
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
W631GG6NB-12
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
20 ns
800 MHz
8
BGA96,9X16,32
.04 Amp
220 mA
W631GG6NB09I
Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
1066 MHz
.05 Amp
270 mA
W631GG6NB12I
W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.
W631GG6NB11I
Winbond Electronics' W631GG6NB11I is a DDR3 DRAM with 64MX16 organization, operating at up to 933 MHz. It features a very thin profile grid array package and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
.045 Amp
240 mA
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