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2 Varactor Diodes 82

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BB179,135 by NXP Semiconductors

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB179B,115 by NXP Semiconductors

BB179B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

4.66 %

8.45

19.11 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB182,115 by NXP Semiconductors

BB182,115

NXP Semiconductors

BB182,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 20.6 and breakdown voltage of 32V. It operates in the very high frequency band, suitable for applications requiring variable capacitance like tuning circuits. This single-configured diode comes in a small outline package with dual terminals and can withstand temperatures from -55 to 125°C.

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB187,115 by NXP Semiconductors

BB187,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

11

29.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB208-03,135 by NXP Semiconductors

BB208-03,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-03,115 by NXP Semiconductors

BB208-03,115

NXP Semiconductors

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-02,135 by NXP Semiconductors

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

FLAT

DUAL

30

BB202LX,315 by NXP Semiconductors

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

8.59 %

2.5

30.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PBCC-N2

e3

1

2

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

6 V

Varactors

YES

TIN

NO LEAD

BOTTOM

BB184,135 by NXP Semiconductors

BB184,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

13 V

SINGLE

9.29 %

6

14 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

13 V

Varactors

YES

TIN

FLAT

DUAL

BB184,115 by NXP Semiconductors

BB184,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

13 V

SINGLE

9.29 %

6

14 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

13 V

Varactors

YES

TIN

FLAT

DUAL

BB179LX,315 by NXP Semiconductors

BB179LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

7.848 %

8.45

19.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-N2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

NO LEAD

DUAL

BB178LX,315 by NXP Semiconductors

BB178LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PBCC-N2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

32 V

Varactors

YES

TIN

NO LEAD

BOTTOM

SMV1763-079LF by Skyworks Solutions

SMV1763-079LF

Skyworks Solutions

SMV1763-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 6.7pF capacitance, suitable for S band applications. It features a small outline package, matte tin finish, and 10V breakdown voltage, making it ideal for high-frequency circuit designs.

LOW NOISE

10 V

SINGLE

7.46 %

2.3

6.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

Varactors

YES

Matte Tin (Sn)

FLAT

DUAL

40

HYPERABRUPT

BBY51-02LE6327 by Infineon Technologies

BBY51-02LE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-XBCC-N2

e3

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

NO LEAD

BOTTOM

HYPERABRUPT

BBY51-02WE6327 by Infineon Technologies

BBY51-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY55-02VE6327 by Infineon Technologies

BBY55-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

16 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY55-02WE6327 by Infineon Technologies

BBY55-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

16 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY59-02VE6327 by Infineon Technologies

BBY59-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15 V

SINGLE

4.32 %

3.4

27.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY65-02VE6327 by Infineon Technologies

BBY65-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15 V

SINGLE

4.41 %

10

29.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

MMVL109T1G by Onsemi

MMVL109T1G

Onsemi

MMVL109T1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount assembly.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMVL3102T1G by Onsemi

MMVL3102T1G

Onsemi

MMVL3102T1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations.

HIGH RELIABILITY

30 V

SINGLE

11.11 %

4.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMVL809T1G by Onsemi

MMVL809T1G

Onsemi

MMVL809T1G by Onsemi is a varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.2W power dissipation. Ideal for ultra high frequency applications, it features a small outline package and gull wing terminals for surface mount assembly.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

MV209G by Onsemi

MV209G

Onsemi

MV209G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this cylindrical diode in plastic/epoxy package is designed for through-hole mounting with tin silver copper finish.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-226AC

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.2 W

Not Qualified

200

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

HYPERABRUPT

MV2101G by Onsemi

MV2101G

Onsemi

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

6.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

450

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

MV2109G by Onsemi

MV2109G

Onsemi

MV2109G by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

33 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

200

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

MV2109RLRAG by Onsemi

MV2109RLRAG

Onsemi

MV2109RLRAG by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

33 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

200

30 V

Varactors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

ABRUPT

SMV2023-011LF by Skyworks Solutions

SMV2023-011LF

Skyworks Solutions

SMV2023-011LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.9 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. It's used in RF applications for frequency tuning due to its small outline package and high capacitance ratio.

LOW NOISE

22 V

SINGLE

10.2 %

4.2

4.9 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

500

22 V

Varactors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

HYPERABRUPT

BB565H7903XTMA1 by Infineon Technologies

BB565H7903XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BB565H7908XTSA1 by Infineon Technologies

BB565H7908XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BB565H7912XTSA1 by Infineon Technologies

BB565H7912XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BB689H7908XTSA1 by Infineon Technologies

BB689H7908XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BBY58-02V-E6327 by Infineon Technologies

BBY58-02V-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

10 V

Varactors

YES

FLAT

DUAL

HYPERABRUPT

BB187LX,315 by NXP Semiconductors

BB187LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

32 V

SINGLE

7.71 %

11

31.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

YES

NO LEAD

BOTTOM

ABRUPT

1SV305,H3F by Toshiba

1SV305,H3F

Toshiba

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

5.46 %

2.8

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

10 V

.003 uA

10 V

YES

FLAT

DUAL

ABRUPT