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Taiwan Semiconductor Transient Suppression Devices 27

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
P6SMB68AR5G by Taiwan Semiconductor

P6SMB68AR5G

Taiwan Semiconductor

P6SMB68AR5G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 58.1V VRWM, AVALANCHE tech, and UNI POLARITY. It's used for transient suppression in automotive electronics due to its AEC-Q101 compliance and -65 to 150°C operating range.

EXCELLENT CLAMPING CAPABILITY

71.4 V

64.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

1

600 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

3 W

AEC-Q101

58.1 V

YES

AVALANCHE

PURE TIN

C BEND

DUAL

P6KE150AR0G by Taiwan Semiconductor

P6KE150AR0G

Taiwan Semiconductor

P6KE150AR0G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 143V Min Breakdown Voltage. It operates b/w -55 to 175 °C and has a Max Power Dissipation of 5W. Ideal for transient suppression in electronic circuits.

EXCELLENT CLAMPING CAPABILITY

158 V

143 V

ISOLATED

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

UL RECOGNIZED

128 V

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

P6KE400AR0G by Taiwan Semiconductor

P6KE400AR0G

Taiwan Semiconductor

P6KE400AR0G by Taiwan Semiconductor is a 600W unidirectional Trans Voltage Suppressor Diode with 380V min breakdown voltage. It operates b/w -55 to 175 °C and has a max power dissipation of 5W. Ideal for transient suppression in electronic circuits.

EXCELLENT CLAMPING CAPABILITY

420 V

380 V

ISOLATED

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

UNIDIRECTIONAL

5 W

UL RECOGNIZED

342 V

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

SMBJ10AM4G by Taiwan Semiconductor

SMBJ10AM4G

Taiwan Semiconductor

SMBJ10AM4G by Taiwan Semiconductor is a single transient suppression device with 600W peak reverse power dissipation. It operates b/w -55°C to 150°C, making it suitable for protecting electronic circuits from voltage spikes in various applications. With a breakdown voltage of 12.3V and unidirectional polarity, this silicon diode is ideal for avalanche technology-based protection in compact outline packages.

EXCELLENT CLAMPING CAPABILITY

12.3 V

11.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

10 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMBJ130AM4G by Taiwan Semiconductor

SMBJ130AM4G

Taiwan Semiconductor

SMBJ130AM4G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with a breakdown voltage of 144-159V. It has a max power dissipation of 3W and can operate in temperatures ranging from -55 to 150°C. Ideal for transient suppression applications requiring high peak reverse power dissipation.

EXCELLENT CLAMPING CAPABILITY

159 V

144 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

130 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

P6KE30CAR0G by Taiwan Semiconductor

P6KE30CAR0G

Taiwan Semiconductor

P6KE30CAR0G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 30V Breakdown Voltage. It operates b/w -55 to 175 °C and has a Max Clamping Voltage of 41.4V. Ideal for transient suppression in electronic circuits requiring bidirectional protection.

EXCELLENT CLAMPING CAPABILITY

31.5 V

28.5 V

30 V

ISOLATED

41.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

BIDIRECTIONAL

5 W

UL RECOGNIZED

25.6 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

P6KE440CAR0G by Taiwan Semiconductor

P6KE440CAR0G

Taiwan Semiconductor

P6KE440CAR0G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 440V Breakdown Voltage. It operates b/w -55 to 175 °C and has a Clamping Voltage of 602V, making it ideal for transient suppression in electronic circuits. The device comes in an AXIAL package with MATTE TIN finish, suitable for various applications requiring bidirectional protection.

EXCELLENT CLAMPING CAPABILITY

462 V

418 V

440 V

ISOLATED

602 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

BIDIRECTIONAL

5 W

UL RECOGNIZED

376 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

P6KE82CAR0G by Taiwan Semiconductor

P6KE82CAR0G

Taiwan Semiconductor

P6KE82CAR0G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 82V Breakdown Voltage. It is used for transient suppression in electronics, offering bidirectional protection with a max clamping voltage of 113V. With UL recognition, it operates b/w -55 to 175 °C and has an isolated case connection.

EXCELLENT CLAMPING CAPABILITY

86.1 V

77.9 V

82 V

ISOLATED

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-204AC

O-PALF-W2

e3

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

260

BIDIRECTIONAL

5 W

UL RECOGNIZED

70.1 V

Transient Suppressors

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

10

SMBJ10CAM4G by Taiwan Semiconductor

SMBJ10CAM4G

Taiwan Semiconductor

SMBJ10CAM4G by Taiwan Semiconductor is a single bidirectional transient suppression device with a max power dissipation of 3W. It features an avalanche diode type and can handle up to 600W of non-repetitive peak reverse power dissipation. Ideal for applications requiring protection against voltage transients in electronic circuits.

EXCELLENT CLAMPING CAPABILITY

12.3 V

11.1 V

11.7 V

17 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

3 W

10 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMA6J18AR3G by Taiwan Semiconductor

SMA6J18AR3G

Taiwan Semiconductor

SMA6J18AR3G by Taiwan Semiconductor is a unidirectional avalanche diode with 18V max reverse voltage and 600W peak power dissipation. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and -55 to 175 °C operating temperature range.

EXCELLENT CLAMPING CAPABILITY

22.1 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

4 W

AEC-Q101

18 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB10AR5G by Taiwan Semiconductor

1KSMB10AR5G

Taiwan Semiconductor

1KSMB10AR5G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation. It operates b/w -55°C to 175°C, ideal for protecting electronic circuits in automotive applications. Its unidirectional diode element and avalanche technology ensure reliable performance.

EXCELLENT CLAMPING CAPABILITY

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

AEC-Q101

8.55 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB12CAR5G by Taiwan Semiconductor

1KSMB12CAR5G

Taiwan Semiconductor

1KSMB12CAR5G by Taiwan Semiconductor is a single transient suppression device with a max power dissipation of 5W. It operates in temperatures ranging from -55°C to 175°C, making it suitable for various applications requiring protection against voltage spikes. With a bidirectional polarity and silicon diode element material, this device is ideal for use in automotive electronics meeting AEC-Q101 standards.

EXCELLENT CLAMPING CAPABILITY

12.6 V

11.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

10.2 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMA6J18AHR3G by Taiwan Semiconductor

SMA6J18AHR3G

Taiwan Semiconductor

SMA6J18AHR3G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 18V max repetitive peak reverse voltage. It has a 600W non-repetitive peak reverse power dissipation and operates b/w -55°C to 175°C. Ideal for transient suppression in automotive electronics due to AEC-Q101 reference standard compliance.

EXCELLENT CLAMPING CAPABILITY

22.1 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

4 W

AEC-Q101

18 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMBJ40AHR5G by Taiwan Semiconductor

SMBJ40AHR5G

Taiwan Semiconductor

SMBJ40AHR5G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 40V max repetitive peak reverse voltage. It features a 600W non-repetitive peak reverse power dissipation and operates b/w -55 to 150°C. Ideal for transient suppression in various electronic applications.

EXCELLENT CLAMPING CAPABILITY

49.1 V

44.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

AEC-Q101

40 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMBJ58AHR5G by Taiwan Semiconductor

SMBJ58AHR5G

Taiwan Semiconductor

SMBJ58AHR5G by Taiwan Semiconductor is a single transient suppression device with 600W peak power dissipation. It features a unidirectional diode element made of silicon, ideal for avalanche technology applications. With a breakdown voltage range of 64.4V to 71.2V, it is suitable for protecting electronic components in automotive and industrial settings.

EXCELLENT CLAMPING CAPABILITY

71.2 V

64.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

AEC-Q101

58 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMCJ14AHR7G by Taiwan Semiconductor

SMCJ14AHR7G

Taiwan Semiconductor

SMCJ14AHR7G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 1500W power dissipation, ideal for transient suppression applications. It operates b/w -55 to 150 °C and has a breakdown voltage of 17.2V, making it suitable for protecting electronic circuits from voltage spikes.

EXCELLENT CLAMPING CAPABILITY

17.2 V

15.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

1500 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101

14 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

1KSMB10AHM4G by Taiwan Semiconductor

1KSMB10AHM4G

Taiwan Semiconductor

1KSMB10AHM4G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation. It operates b/w -55 to 175 °C and has a breakdown voltage range of 9.5-10.5V, making it ideal for automotive applications requiring high surge protection.

EXCELLENT CLAMPING CAPABILITY

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

AEC-Q101

8.55 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB10AHR5G by Taiwan Semiconductor

1KSMB10AHR5G

Taiwan Semiconductor

1KSMB10AHR5G by Taiwan Semiconductor is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 1000W power dissipation, ideal for transient suppression applications. It operates b/w -55 to 175 °C and has a breakdown voltage of 10.5V, making it suitable for protecting sensitive electronics from voltage spikes in various industries.

EXCELLENT CLAMPING CAPABILITY

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101

8.55 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

1KSMB12CAHR5G by Taiwan Semiconductor

1KSMB12CAHR5G

Taiwan Semiconductor

1KSMB12CAHR5G by Taiwan Semiconductor is a Transient Suppression Device with a max power dissipation of 1000W. It has a bidirectional polarity and operates in temperatures ranging from -55 to 175 °C. This diode is commonly used for voltage suppression in various electronic applications.

EXCELLENT CLAMPING CAPABILITY

12.6 V

11.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

10.2 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB30CAHR5G by Taiwan Semiconductor

1KSMB30CAHR5G

Taiwan Semiconductor

1KSMB30CAHR5G by Taiwan Semiconductor is a Transient Suppression Device with 1000W power dissipation, operating from -55 to 175°C. It features bidirectional polarity, silicon diode element material, and avalanche technology. Ideal for protecting electronic circuits in automotive applications.

EXCELLENT CLAMPING CAPABILITY

31.5 V

28.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

26.6 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMB10J17AHR5G by Taiwan Semiconductor

SMB10J17AHR5G

Taiwan Semiconductor

SMB10J17AHR5G by Taiwan Semiconductor is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 17V max repetitive peak reverse voltage. It has a 1000W non-repetitive peak reverse power dissipation and operates b/w -55 to 175 °C, making it ideal for transient suppression in automotive applications.

EXCELLENT CLAMPING CAPABILITY

20.9 V

18.9 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

UNIDIRECTIONAL

5 W

AEC-Q101

17 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

PGSMAJ54AHF4G by Taiwan Semiconductor

PGSMAJ54AHF4G

Taiwan Semiconductor

PGSMAJ54AHF4G by Taiwan Semiconductor is a single transient suppression device with 400W peak power dissipation. It has a breakdown voltage of 63.15V and max clamping voltage of 87.1V, making it ideal for protecting electronic circuits from voltage spikes in automotive and industrial applications.

EXCELLENT CLAMPING CAPABILITY

66.3 V

60 V

63.15 V

87.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AC

R-PDSO-C2

e3

1

400 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IEC-61249-2-21

54 V

1 uA

54 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMF20ARVG by Taiwan Semiconductor

SMF20ARVG

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

TRANS VOLTAGE SUPPRESSOR DIODE

e3

1

MATTE TIN

1KSMB12CAH by Taiwan Semiconductor

1KSMB12CAH

Taiwan Semiconductor

1KSMB12CAH by Taiwan Semiconductor is a single transient suppression device with 1000W peak power dissipation and 12V breakdown voltage. It is a bidirectional avalanche diode ideal for protecting sensitive electronics from voltage spikes in automotive applications. Operating temperature ranges from -55°C to 175°C, making it suitable for harsh environments.

EXCELLENT CLAMPING CAPABILITY

12.6 V

11.4 V

12 V

16.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

10.2 V

5 uA

10.2 V

YES

AVALANCHE

C BEND

DUAL

1KSMB18CAH by Taiwan Semiconductor

1KSMB18CAH

Taiwan Semiconductor

1KSMB18CAH by Taiwan Semiconductor is a single transient suppression device with 18V breakdown voltage. It has a max power dissipation of 5W and operates b/w -55°C to 175°C. Ideal for protecting electronic circuits from voltage spikes in automotive applications.

EXCELLENT CLAMPING CAPABILITY

18.9 V

17.1 V

18 V

25.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

15.3 V

1 uA

15.3 V

YES

AVALANCHE

C BEND

DUAL

1KSMB30CAH by Taiwan Semiconductor

1KSMB30CAH

Taiwan Semiconductor

1KSMB30CAH by Taiwan Semiconductor is a Transient Suppression Device with 30V Breakdown Voltage, 1000W Power Dissipation, and BIDIRECTIONAL Polarity. Ideal for protecting sensitive electronics from voltage spikes in automotive applications due to AEC-Q101 standard compliance.

EXCELLENT CLAMPING CAPABILITY

31.5 V

28.5 V

30 V

41.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

25.6 V

1 uA

25.6 V

YES

AVALANCHE

C BEND

DUAL

TLD8S18AH by Taiwan Semiconductor

TLD8S18AH

Taiwan Semiconductor

TLD8S18AH by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 6600W peak power dissipation, 21.05V breakdown voltage, and 150uA max reverse current. Ideal for transient suppression in automotive electronics, meeting AEC-Q101 and IEC-61000-4-2 standards.

HIGH RELIABILITY

22.1 V

20 V

21.05 V

29.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.8 V

DO-218AB

R-PSSO-C1

e3

1

6600 W

1

1

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

8 W

AEC-Q101; IEC-61000-4-2

18 V

150 uA

18 V

YES

AVALANCHE

MATTE TIN

C BEND

SINGLE