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TLD8S18AH

Taiwan Semiconductor

TLD8S18AH by Taiwan Semiconductor

TLD8S18AH by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 6600W peak power dissipation, 21.05V breakdown voltage, and 150uA max reverse current. Ideal for transient suppression in automotive electronics, meeting AEC-Q101 and IEC-61000-4-2 standards.

Median Price

$5.125

Lifecycle Status

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4

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1k+

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RS (Exports)

UK . 404 parts In-Stock

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$5.125

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$5.017

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Vyrian

USA . 3,750 parts In-Stock

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Schukat

Germany . 650 parts In-Stock

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$3.697

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$2.569

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Nova Conductors

Japan . 36 parts In-Stock

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Aztec Data Supply Inc.

USA . 10,459 parts In-Stock

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$0.160

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Semicontronic

India . 65 parts In-Stock

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$4.360

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$4.251

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$4.229

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65

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AZTECH Wire

Italy . 791 parts In-Stock

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$15.363

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Argo Parts USA

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Bastille Electronics

Australia . 800 parts In-Stock

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Advanced Electronics

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Continental Prestige Electronics

USA . 465 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the TLD8S18AH by Taiwan Semiconductor. With a maximum non-repetitive peak reverse power dissipation of 6600 W and a nominal breakdown voltage of 21.05 V, this product offers top-notch quality and performance. Perfect for applications requiring protection against voltage spikes, this single-configured device is designed to provide peace of mind and safeguard your electronics. Trust Taiwan Semiconductor's expertise in manufacturing high-quality components for all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for use in various applications.

Config: SINGLE

Single configuration simplifies installation and reduces the risk of errors, making it user-friendly.

Surface Mount: YES

Surface mount design saves space and allows for easy integration into circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 6600 W

High power dissipation allows for reliable protection against transient voltage spikes.

Nominal Breakdown Voltage: 21.05 V

The specific breakdown voltage ensures effective suppression of overvoltage events.

Maximum Reverse Current: 150 uA

Low reverse current helps maintain the integrity of the circuit during normal operation.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and efficient design for space-constrained applications.

Reverse Test Voltage: 18 V

This voltage level ensures proper performance in protecting against reverse polarity incidents.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space and enables easy installation.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for use in various environmental conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation even in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the chance of errors.

Maximum Power Dissipation: 8 W

High power dissipation ability ensures long-term reliability in protecting sensitive electronic components.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage is above the typical voltage levels encountered in circuits, providing a safety margin.

Maximum Breakdown Voltage: 22.1 V

The maximum breakdown voltage limit ensures protection against higher than usual overvoltage events.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures the product meets quality and safety requirements.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for effective transient voltage suppression.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage drop minimizes power loss during operation.

Technology: AVALANCHE

Avalanche technology allows for rapid response to transient voltage events, increasing protection capabilities.

Terminal Form: C BEND

C bend terminal form ensures a secure and stable connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 18 V

High repetitive peak reverse voltage ensures continuous protection against voltage spikes over time.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies installation and ensures proper circuit operation.

Maximum Clamping Voltage: 29.2 V

The maximum clamping voltage level provides effective suppression of transient voltage spikes.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices TLD8S18AH attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Nominal Breakdown Voltage:

21.05 V

Maximum Clamping Voltage:

29.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.8 V

JEDEC-95 Code:

DO-218AB

JESD-30 Code:

R-PSSO-C1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

6600 W

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

8 W

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

18 V

Maximum Reverse Current:

150 uA

Reverse Test Voltage:

18 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

TLD8S18AH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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