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1KSMB12CAR5G

Taiwan Semiconductor

1KSMB12CAR5G by Taiwan Semiconductor

1KSMB12CAR5G by Taiwan Semiconductor is a single transient suppression device with a max power dissipation of 5W. It operates in temperatures ranging from -55°C to 175°C, making it suitable for various applications requiring protection against voltage spikes. With a bidirectional polarity and silicon diode element material, this device is ideal for use in automotive electronics meeting AEC-Q101 standards.

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AZTECH Wire

Italy . 890 parts In-Stock

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Component Stockers USA

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Continental Prestige Electronics

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Overview

Upgrade your electronics with the high-quality 1KSMB12CAR5G transient suppression device from Taiwan Semiconductor. Designed for optimal performance and reliability, this product offers superior protection against voltage spikes, ensuring the longevity of your valuable equipment. Ideal for a wide range of applications, this diode is perfect for safeguarding sensitive components in automotive, industrial, and consumer electronics. Trust Taiwan Semiconductor's expertise and invest in the best for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides reliable and durable protection for transient suppression devices, offering good resistance to temperature and environmental factors.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High power dissipation capability ensures that this device can handle short-duration transient voltage spikes effectively, protecting connected circuitry.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows this device to be used in various environmental conditions without compromising performance.

Minimum Breakdown Voltage: 11.4 V

Low minimum breakdown voltage ensures that the device can quickly respond to transient overvoltage conditions, providing efficient protection.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard indicates that this transient suppression device meets strict automotive industry requirements for reliability and performance.

Technical Specifications

Transient Suppression Devices 1KSMB12CAR5G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1KSMB12CAR5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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